公开(公告)号：US07465634B2

公开(公告)日：2008-12-16

申请号：US11583500

申请日：2006-10-18

申请人： Peng-Soon Lim ,  Yong-Tian Hou ,  Jin Ying ,  Hun-Jan Tao

发明人： Peng-Soon Lim ,  Yong-Tian Hou ,  Jin Ying ,  Hun-Jan Tao

IPC分类号： H01L21/336

CPC分类号： H01L21/823814 ,  H01L21/28097 ,  H01L21/823807 ,  H01L29/66636 ,  H01L29/7848

摘要： An n-FET and a p-FET each have elevated source/drain structures. Optionally, the p-FET elevated-SOURCE/DRAIN structure is epitaxially grown from a p-FET recess formed in the substrate. Optionally, the n-FET elevated-SOURCE/DRAIN structure is epitaxially grown from an n-FET recess formed in the substrate. The n-FET and p-FET elevated-source/drain structures are both silicided, even though the structures may have different materials and/or different structure heights. At least a thermal treatment portion of the source/drain structure siliciding is performed simultaneously for the n-FET and p-FET elevated source/drain structures. Also, the p-FET gate electrode, the n-FET gate electrode, or both, may optionally be silicided simultaneously (same metal and/or same thermal treatment step) with the n-FET and p-FET elevated-source/drain structures, respectively; even though the gate electrodes may have different materials, different silicide metal, and/or different electrode heights. The silicides formed on n-FET and p-FET elevated-source/drain structures preferably do not extend below a top surface of the substrate more than about 250 angstroms; and the structure heights may be selected to provide this.

公开(公告)号：US20080001237A1

公开(公告)日：2008-01-03

申请号：US11478476

申请日：2006-06-29

申请人： Vincent S. Chang ,  Peng-Fu Hsu ,  Fong-Yu Yen ,  Yong-Tian Hou ,  Jin Ying ,  Hun-Jan Tao

发明人： Vincent S. Chang ,  Peng-Fu Hsu ,  Fong-Yu Yen ,  Yong-Tian Hou ,  Jin Ying ,  Hun-Jan Tao

IPC分类号： H01L29/78

CPC分类号： H01L29/513 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823437 ,  H01L21/823462 ,  H01L21/823475 ,  H01L21/823828 ,  H01L21/823857 ,  H01L21/823871 ,  H01L29/4966 ,  H01L29/518 ,  H01L29/7833

摘要： Disclosed is a semiconductor device having a substrate, an interfacial layer formed on said substrate, a nitrogen-containing high dielectric constant (high-k) layer formed on said interfacial layer, and a metal electrode on said nitrogen-containing high-k layer. Also disclosed is a method of forming a transistor including forming on a substrate an interfacial layer comprising silicon and oxygen, depositing on the interfacial layer a high-k dielectric material, nitriding the high-k dielectric material, depositing a metal layer on the high-k dielectric material, and patterning the metal layer, the high-k dielectric material, and the interfacial layer to form a gate stack.

摘要翻译： 公开了一种半导体器件，其具有基板，在所述基板上形成的界面层，在所述界面层上形成的含氮高介电常数（高k）层和所述含氮高k层上的金属电极。 还公开了一种形成晶体管的方法，包括在衬底上形成包含硅和氧的界面层，在界面层上沉积高k电介质材料，氮化高k电介质材料，在高介电材料上沉积金属层， k电介质材料，并且图案化金属层，高k电介质材料和界面层以形成栅极堆叠。

公开(公告)号：US06817785B2

公开(公告)日：2004-11-16

申请号：US10136117

申请日：2002-05-01

申请人： Yong Tian

发明人： Yong Tian

IPC分类号： G02B6255

CPC分类号： G02B6/2551

摘要： Good quality fusion splicing of optical fibers with very different melting points (even 800° C. and 1800° C.) can be achieved by heating the end (3) of the fiber of lower melting point to a substantial extent (preferably entirely) by conduction from the pre-heated end (4) of the fiber of higher melting point. Preheating is suitably by a laser with its beam (15) centered close to the interface between the two fibers (or slightly displaced in the direction of the fiber of higher melting point if the intensity of the beam is relatively evenly spread) using a screen (13) to shade the fiber of lower melting point from the beam.

摘要翻译： 通过将较低熔点的纤维的端部（3）加热到相当程度（优选完全地），可以通过以下方式实现具有非常不同熔点（甚至800℃和1800℃）的光纤的良好的熔接。 来自较高熔点的纤维的预热端（4）的导电。 预热适当地通过激光器，其光束（15）以两个光纤之间的界面为中心（或者如果光束的强度相对均匀地扩展，则在较高熔点的光纤的方向上稍微偏移） 13）使来自梁的较低熔点的纤维遮蔽。