公开(公告)号：US4456975A

公开(公告)日：1984-06-26

申请号：US345678

申请日：1982-02-04

申请人： Ryo Suzuki ,  Naoki Kodama ,  Tadashi Ikeda ,  Yutaka Sugita

发明人： Ryo Suzuki ,  Naoki Kodama ,  Tadashi Ikeda ,  Yutaka Sugita

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/0808 ,  G11C19/0816

摘要： The magnetic bubble memory device according to this invention comprises an active magnetic bubble memory region formed by implanting ions into a layer of magnetic bubble material, a propagation loop having inner and outer propagation tracks formed by ion implantation so as to surround this region and to propagate captured magnetic bubbles along the circumference of this region, and at least one opening portion provided at the propagation loop so as to propagate magnetic bubbles in the inner propagation track to the outer propagation track.

摘要翻译： 根据本发明的磁性气泡存储装置包括通过将离子注入到磁性气泡材料层中形成的主动气泡存储区域，传播回路具有通过离子注入形成的内部和外部传播轨道，以便围绕该区域并传播 沿着该区域的圆周捕获磁气泡，以及设置在传播环路处的至少一个开口部分，以便将内部传播轨道中的气泡传播到外部传播轨道。

公开(公告)号：US4404233A

公开(公告)日：1983-09-13

申请号：US224743

申请日：1981-01-13

申请人： Tadashi Ikeda ,  Norikazu Tsumita ,  Yutaka Sugita

发明人： Tadashi Ikeda ,  Norikazu Tsumita ,  Yutaka Sugita

IPC分类号： C23C14/48 ,  C30B31/22 ,  G11C19/08 ,  H01F41/14 ,  H01J37/317 ,  H01L21/265 ,  B05D3/06

CPC分类号： C23C14/48 ,  C30B31/22 ,  G11C19/0808 ,  H01F41/14 ,  H01J37/3171 ,  H01L21/265

摘要： The ion implantation is performed in a manner to vary the angle between an ion beam and an article to be implanted with ions, whereby it can be accomplished with remarkable ease while providing the impurity distribution which is flattened in the depthwise direction.

摘要翻译： 以离子束和被离子注入物品之间的角度变化的方式进行离子注入，可以非常容易地进行离子注入，同时提供在深度方向上被平坦化的杂质分布。

公开(公告)号：US4267230A

公开(公告)日：1981-05-12

申请号：US89380

申请日：1979-10-30

申请人： Norio Ohta ,  Fumihiko Ishida ,  Tadashi Ikeda ,  Keikichi Ando ,  Yutaka Sugita

发明人： Norio Ohta ,  Fumihiko Ishida ,  Tadashi Ikeda ,  Keikichi Ando ,  Yutaka Sugita

IPC分类号： G11C11/14 ,  H01F10/24 ,  G11B5/64

CPC分类号： H01F10/24 ,  Y10S428/90 ,  Y10T428/265

摘要： A garnet film for a magnetic bubble domain device which comprises a predetermined quantity of Gd and a predetermined quantity of Ga.The garnet film has a temperature coefficient of not more than 0.2%/.degree.C. in respect of the bubble collapse field owing to the addition of Gd and Ga and is suitable for substaining small magnetic bubbles of a diameter of less than 2.5 .mu.m.

摘要翻译： 一种用于磁泡区域装置的石榴石膜，其包含预定量的Gd和预定量的Ga。由于石榴石膜的气泡塌陷场，温度系数不大于0.2％/℃ 添加Gd和Ga，适用于形成直径小于2.5μm的小型气泡。