公开(公告)号：US4584668A

公开(公告)日：1986-04-22

申请号：US603450

申请日：1984-04-24

申请人： Teruaki Takeuchi ,  Ryo Suzuki ,  Naoki Kodama ,  Masatoshi Takeshita ,  Tadashi Ikeda ,  Toshihiro Sato ,  Yutaka Sugita

发明人： Teruaki Takeuchi ,  Ryo Suzuki ,  Naoki Kodama ,  Masatoshi Takeshita ,  Tadashi Ikeda ,  Toshihiro Sato ,  Yutaka Sugita

IPC分类号： G11C19/08

CPC分类号： G11C19/08 ,  G11C19/0891

摘要： A magnetic bubble memory device has two types of magnetic bubble propagation tracks. One type of magnetic bubble propagation tracks are formed by implanting ions into a magnetic layer. The other are formed by a soft magnetic material, for example, a permalloy. At least the area where the soft magnetic material is located has a smaller thickness than the other area.

摘要翻译： 磁性气泡存储器件具有两种类型的气泡传播轨迹。 通过将离子注入到磁性层中形成一种类型的气泡传播轨迹。 另一种由软磁性材料，例如坡莫合金形成。 至少软磁性材料所在的区域的厚度比其他区域的厚度小。

公开(公告)号：US4528645A

公开(公告)日：1985-07-09

申请号：US375344

申请日：1982-05-05

申请人： Yutaka Sugita ,  Ryo Suzuki ,  Naoki Kodama ,  Masatoshi Takeshita ,  Tadashi Ikeda

发明人： Yutaka Sugita ,  Ryo Suzuki ,  Naoki Kodama ,  Masatoshi Takeshita ,  Tadashi Ikeda

IPC分类号： G11C11/14 ,  G11C19/08 ,  H01F41/34

CPC分类号： H01F41/34 ,  G11C19/0891

摘要： A magnetic bubble memory device is disclosed in which a magnetic bubble propagation circuit for forming a minor loop is formed by ion implantation, and at least part of a major line or major loop and at least part of connecting portions between the minor loop and the major line or major loop are formed of a film of a soft magnetic material.

摘要翻译： 公开了一种磁性气泡存储装置，其中通过离子注入形成用于形成次环的磁性气泡传播电路，并且至少部分主线或主环以及次级环与主环之间的连接部分的至少一部分 线或主环由软磁性材料的膜形成。

公开(公告)号：US4456975A

公开(公告)日：1984-06-26

申请号：US345678

申请日：1982-02-04

申请人： Ryo Suzuki ,  Naoki Kodama ,  Tadashi Ikeda ,  Yutaka Sugita

发明人： Ryo Suzuki ,  Naoki Kodama ,  Tadashi Ikeda ,  Yutaka Sugita

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/0808 ,  G11C19/0816

摘要： The magnetic bubble memory device according to this invention comprises an active magnetic bubble memory region formed by implanting ions into a layer of magnetic bubble material, a propagation loop having inner and outer propagation tracks formed by ion implantation so as to surround this region and to propagate captured magnetic bubbles along the circumference of this region, and at least one opening portion provided at the propagation loop so as to propagate magnetic bubbles in the inner propagation track to the outer propagation track.

摘要翻译： 根据本发明的磁性气泡存储装置包括通过将离子注入到磁性气泡材料层中形成的主动气泡存储区域，传播回路具有通过离子注入形成的内部和外部传播轨道，以便围绕该区域并传播 沿着该区域的圆周捕获磁气泡，以及设置在传播环路处的至少一个开口部分，以便将内部传播轨道中的气泡传播到外部传播轨道。

公开(公告)号：US4621344A

公开(公告)日：1986-11-04

申请号：US669427

申请日：1984-11-08

申请人： Toshihiro Sato ,  Ryo Suzuki ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Yutaka Sugita

发明人： Toshihiro Sato ,  Ryo Suzuki ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Yutaka Sugita

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/0816

摘要： A magnetic bubble device has minor loops formed through ion implantation and used for storing information. As the density becomes higher, inside turn corner portions are formed on the minor loops. Dummy patterns having circular, triangular or other shapes are disposed in the vicinity of the corner portion. It is desirable that the minimum distance X between the dummy pattern and the propagation track satisfy the relation of 1.5 D.ltoreq.X.ltoreq.3.5 D, where D represents the diameter of a bubble.

摘要翻译： 磁性气泡装置具有通过离子注入形成的较小的环，用于存储信息。 随着密度变高，在小环上形成内转角部。 具有圆形，三角形或其他形状的虚拟图案设置在角部附近。 期望虚拟图案和传播轨迹之间的最小距离X满足1.5D≤X≤3.5D的关系，其中D表示气泡的直径。

公开(公告)号：US4556582A

公开(公告)日：1985-12-03

申请号：US375180

申请日：1982-05-05

申请人： Ryo Imura ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Hiroshi Umezaki ,  Ryo Suzuki ,  Yutaka Sugita

发明人： Ryo Imura ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Hiroshi Umezaki ,  Ryo Suzuki ,  Yutaka Sugita

IPC分类号： G11C11/14 ,  G11C19/08 ,  H01F10/24 ,  H01F41/14 ,  H01F41/34 ,  B05D3/06

CPC分类号： H01F41/14 ,  G11C19/08 ,  H01F10/24 ,  H01F41/34

摘要： A method of fabricating a magnetic bubble memory device is disclosed in which ions are implanted in a desired portion of a surface region in a magnetic bubble film for magnetic bubbles to form a strain layer having a strain of about 1% to about 2.5%, a film is provided on the magnetic bubble film so as to cover the magnetic bubble film with the film and then the magnetic bubble film is annealed under predetermined conditions, thereby providing a practical magnetic bubble memory device having a large bias margin.

摘要翻译： 公开了一种制造磁性气泡存储装置的方法，其中将离子注入用于磁性气泡的磁性气泡膜的表面区域的期望部分中以形成具有约1％至约2.5％的应变的应变层， 在磁性气泡膜上设置膜以覆盖气泡膜，然后在预定条件下对磁性气泡膜进行退火，由此提供具有大的偏置裕度的实用的磁性气泡存储装置。

公开(公告)号：US4460412A

公开(公告)日：1984-07-17

申请号：US367675

申请日：1982-04-12

申请人： Ryo Imura ,  Tadashi Ikeda ,  Ryo Suzuki ,  Nagatugu Koiso ,  Teruaki Takeuchi ,  Hiroshi Umezaki ,  Yutaka Sugita

发明人： Ryo Imura ,  Tadashi Ikeda ,  Ryo Suzuki ,  Nagatugu Koiso ,  Teruaki Takeuchi ,  Hiroshi Umezaki ,  Yutaka Sugita

IPC分类号： G11C11/14 ,  H01F10/24 ,  H01F41/14 ,  H01F41/32 ,  H01F41/34 ,  H01L21/265 ,  C04B35/00 ,  G11C19/08

CPC分类号： H01F10/24 ,  H01F41/14 ,  H01F41/32 ,  H01F41/34

摘要： A method of implanting a magnetic garnet film with ions is disclosed in which a covering film is provided on a monocrystalline magnetic garnet film for magnetic bubbles, and hydrogen ions are implanted in a desired portion of a surface region in the magnetic garnet film through the covering film. According to this method, it is possible to form an ion-implanted layer in which the ion concentration distribution in the direction of depth is uniform, and moreover the inplane anisotropy field in the ion-implanted layer decreases only a little with time in an annealing process.

摘要翻译： 公开了一种用离子注入磁性石榴石膜的方法，其中在用于磁性气泡的单晶磁性石榴石膜上提供覆盖膜，并且通过覆盖物将氢离子注入到磁性石榴石膜的表面区域的期望部分中 电影。 根据该方法，可以形成离子注入层，其中在深度方向上的离子浓度分布是均匀的，此外，离子注入层中的面内各向异性场在退火中仅随时间降低一点 处理。

公开(公告)号：US4559617A

公开(公告)日：1985-12-17

申请号：US635169

申请日：1984-07-27

申请人： Toshihiro Sato ,  Ryo Suzuki ,  Tadashi Ikeda ,  Masatoshi Takeshita ,  Yutaka Sugita

发明人： Toshihiro Sato ,  Ryo Suzuki ,  Tadashi Ikeda ,  Masatoshi Takeshita ,  Yutaka Sugita

IPC分类号： G11C11/14 ,  G11C19/08 ,  H01F41/34

CPC分类号： G11C19/0816 ,  H01F41/34

摘要： A high density magnetic bubble memory device comprises first magnetic bubble propagation tracks formed through ion implantation and second magnetic bubble propagation tracks formed of a soft magnetic material. Regions exclusive of those destined for realization of the second magnetic bubble propagation tracks are deeply ion-implanted. Gaps between the adjacent soft magnetic material films are also deeply ion-implanted. The second magnetic bubble propagation tracks may be shallowly ion-implanted or not implanted with ions.

摘要翻译： 高密度磁气泡存储装置包括通过离子注入形成的第一磁气体传播路径和由软磁材料形成的第二磁气泡传播路径。 深入离子注入用于实现第二磁性气泡传播轨迹的区域。 相邻的软磁性材料膜之间的间隙也被深度离子注入。 第二个磁性气泡传播轨迹可以是浅离子注入的，也可以不用离子注入。

公开(公告)号：US4769783A

公开(公告)日：1988-09-06

申请号：US804164

申请日：1985-12-03

申请人： Toshihiro Sato ,  Takashi Toyooka ,  Teruaki Takeuchi ,  Masatoshi Takeshita ,  Naoki Kodama ,  Tadashi Ikeda ,  Ryo Suzuki

发明人： Toshihiro Sato ,  Takashi Toyooka ,  Teruaki Takeuchi ,  Masatoshi Takeshita ,  Naoki Kodama ,  Tadashi Ikeda ,  Ryo Suzuki

IPC分类号： G11C19/08

CPC分类号： G11C19/0875

摘要： In a magnetic bubble memory device employing ion-implanted tracks as minor loops for data storage, there is proposed a magnetic bubble memory element employing a minor loop having a folded structure and a turn composed of three tips formed convexly toward an ion-implanted area and two cusps as an inside turn for accomplishing the folding with a center as the ion-implanted area. In this inside turn, the line connecting between the two cusps of the turn includes a gradient in the range of 90 degrees to 120 degrees in relation to the ion-implanted straight line tracks.

摘要翻译： 在采用离子注入轨迹作为用于数据存储的小环路的磁性气泡存储装置中，提出了一种使用具有折叠结构的小环的磁性气泡存储元件，并且由三个尖端组成的转弯，凸起地形成离子注入区域， 作为内部转弯的两个尖端，用于实现具有中心的折叠作为离子注入区域。 在这个内部转弯中，连接两个转弯之间的线相对于离子注入的直线轨迹包括在90度至120度范围内的梯度。

公开(公告)号：US4494216A

公开(公告)日：1985-01-15

申请号：US451093

申请日：1982-12-20

申请人： Ryo Suzuki ,  Tadashi Ikeda ,  Masatoshi Takeshita ,  Naoki Kodama

发明人： Ryo Suzuki ,  Tadashi Ikeda ,  Masatoshi Takeshita ,  Naoki Kodama

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/0891

摘要： Disclosed is a magnetic bubble memory device having a first bubble propagation path formed in an ion-implanted pattern and a second bubble propagation path formed of permalloy elements, both paths being spaced out from each other by a distance larger than or equal to the diameter of the magnetic bubble, and a propagation path connecting structure in which a hairpin-shaped conductor for connecting both propagation paths is disposed between them.

摘要翻译： 公开了具有以离子注入图案形成的第一气泡传播路径和由坡莫合金元件形成的第二气泡传播路径的磁性气泡存储器件，两个路径彼此间隔开大于或等于 磁气泡和传播路径连接结构，其中用于连接两个传播路径的发夹形导体设置在它们之间。

公开(公告)号：US4701385A

公开(公告)日：1987-10-20

申请号：US680891

申请日：1984-12-12

申请人： Ryo Imura ,  Tadashi Ikeda ,  Yutaka Sugita

发明人： Ryo Imura ,  Tadashi Ikeda ,  Yutaka Sugita

IPC分类号： G11C11/14 ,  G11C19/08 ,  H01F41/22 ,  B32B9/00

CPC分类号： G11C19/0808 ,  H01F41/22 ,  Y10S428/90

摘要： In a magnetic bubble device, a strain layer formed on the surface of a magnetic bubble garnet film by ion-implantation is required to have anisotropy field of great strength in the in-plane direction for driving magnetic bubbles. For preventing the effective anisotropy field change from being decreased by heat treatment, ion species having large mass and projected standard deviation not greater than 1000 .ANG. are implanted. The ion species are preferably selected from He to Kr in the periodic table. The heat treatment is effected at a temperature in a range of 450.degree. C. to 900.degree. C.

摘要翻译： 在气泡装置中，通过离子注入形成在石英石墨膜的表面上的应变层需要具有用于驱动磁性气泡的面内方向上的强度的各向异性场。 为了防止通过热处理而降低有效各向异性场的变化，植入具有大质量的离子种类和不超过1000安培的投影标准偏差。 离子种类优选选自周期表中的He至Kr。 热处理在450〜900℃的温度范围内进行。