公开(公告)号：US20210166946A1

公开(公告)日：2021-06-03

申请号：US17093139

申请日：2020-11-09

Applicant: APPLIED Materials, Inc.

Inventor： Anthony Renau ,  Joseph C. Olson ,  Peter F. Kurunczi

IPC: H01L21/265 ,  H01J37/20

Abstract: A system may include a substrate stage to support a substrate, and a plurality of beam sources. The plurality of beam sources may include an ion beam source, the ion beam source arranged to direct an ion beam to the substrate, and a radical beam source, the radical beam source arranged to direct a radical beam to the substrate. The system may include a controller configured to control the ion beam source and the radical beam source to operate independently of one another, in at least one aspect, wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of a beam source with respect to the substrate.

公开(公告)号：US09377692B2

公开(公告)日：2016-06-28

申请号：US14301184

申请日：2014-06-10

Applicant: Applied Materials, Inc.

Inventor： Peng Xie ,  Ludovic Godet ,  Tristan Ma ,  Joseph C. Olson ,  Christopher Bencher

IPC: G03F7/20 ,  G03F7/38 ,  B82Y10/00

CPC classification number: G03F7/38 ,  B82Y10/00 ,  G03F7/20 ,  G03F7/26 ,  G03F7/70

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

Abstract translation: 提供了通过光刻形成的线中的线边缘/宽度粗糙度最小化的方法和装置。 在光刻过程中由光致酸发生器产生的酸的随机扩散有助于线边缘/宽度粗糙度。 本文公开的方法在光刻工艺期间施加电场和/或磁场。 场应用控制由光致酸发生器沿线和间隔方向产生的酸的扩散，防止由随机扩散引起的线边缘/宽度粗糙度。 用于实施上述方法的装置也在此公开。