公开(公告)号：US12099241B2

公开(公告)日：2024-09-24

申请号：US18305256

申请日：2023-04-21

Applicant: Applied Materials, Inc.

Inventor： Peter Kurunczi ,  Joseph C. Olson ,  Morgan Evans ,  Rutger Meyer Timmerman Thijssen

IPC: G02B6/34 ,  G03F7/00 ,  G03F7/09 ,  B29C33/38

CPC classification number: G02B6/34 ,  G03F7/0005 ,  G03F7/094 ,  B29C33/3842 ,  G02B2207/101 ,  G03F7/0002

Abstract: A method for forming a device structure is disclosed. The method of forming a device structure includes forming a variable-depth structure in a device material layer using a laser ablation. A plurality of device structures is formed in the variable-depth structure to define slanted device structures therein. The variable-depth structure and the slanted device structures are formed using an etch process.

公开(公告)号：US20230335375A1

公开(公告)日：2023-10-19

申请号：US18214355

申请日：2023-06-26

Applicant: Applied Materials, Inc.

Inventor： Peter F. Kurunczi ,  Morgan Evans ,  Joseph C. Olson ,  Christopher A. Rowland ,  James Buonodono

IPC: H01J37/305 ,  H01J37/20 ,  H01J37/08

CPC classification number: H01J37/3053 ,  H01J37/20 ,  H01J37/08 ,  H01J2237/3174 ,  H01J2237/0822 ,  H01J2237/0041 ,  H01J2237/20228

Abstract: A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.

公开(公告)号：US11715621B2

公开(公告)日：2023-08-01

申请号：US16535885

申请日：2019-08-08

Applicant: APPLIED Materials, Inc.

Inventor： Peter F. Kurunczi ,  Morgan Evans ,  Joseph C. Olson ,  Christopher A. Rowland ,  James Buonodono

IPC: H01J37/30 ,  H01J37/305 ,  H01J37/20 ,  H01J37/08

CPC classification number: H01J37/3053 ,  H01J37/08 ,  H01J37/20 ,  H01J2237/0041 ,  H01J2237/0822 ,  H01J2237/20228 ,  H01J2237/3174

Abstract: A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.

公开(公告)号：US20230187166A1

公开(公告)日：2023-06-15

申请号：US17547623

申请日：2021-12-10

Applicant: Applied Materials, Inc.

Inventor： Robert Mitchell ,  Frank Sinclair ,  Joseph C. Olson ,  William T. Weaver ,  Nick Parisi

IPC: H01J37/20 ,  H01J37/317 ,  H01L21/683 ,  C23C14/48 ,  C23C14/50

CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01L21/6833 ,  C23C14/48 ,  C23C14/505 ,  H01J2237/20214

Abstract: A system comprising a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on the spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The plurality of platens may also be capable of rotation. The central hub also controls the rotation of each of the platens about an axis orthogonal to the rotation axis of the central hub. In this way, variable angle implants may be performed. Additionally, this allows the workpieces to be mounted while in a horizontal orientation.

公开(公告)号：US11456152B2

公开(公告)日：2022-09-27

申请号：US16705158

申请日：2019-12-05

Applicant: Applied Materials, Inc.

Inventor： Joseph C. Olson ,  Morgan Evans ,  Rutger Meyer Timmerman Thijssen

IPC: H01J37/305 ,  H01J37/12 ,  G02B6/136 ,  H01J37/147 ,  H01J37/20 ,  G02B6/12

Abstract: Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material.

公开(公告)号：US11387073B2

公开(公告)日：2022-07-12

申请号：US16828218

申请日：2020-03-24

Applicant: Applied Materials, Inc.

Inventor： Frank Sinclair ,  Jonathan Gerald England ,  Joseph C. Olson

IPC: H01J37/244 ,  H01J37/20 ,  H01J37/317 ,  H01J37/141

Abstract: A system and method that is capable of measuring the incident angle of an ion beam, especially an ion beam comprising heavier ions, is disclosed. In one embodiment, X-rays, rather than ions, are used to determine the channeling direction. In another embodiment, the workpiece is constructed, at least in part, of a material having a high molecular weight such that heaver ion beams can be measured. Further, in another embodiment, the parameters of the ion beam are measured across an entirety of the beam, allowing components of the ion implantation system to be further tuned to create a more uniform beam.

公开(公告)号：US20220119955A1

公开(公告)日：2022-04-21

申请号：US17072130

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： M. Arif Zeeshan ,  Shantanu Kallakuri ,  Joseph C. Olson

IPC: C23C16/56 ,  C23C16/04

Abstract: Embodiments of the present disclosure include positioning a mask over a substrate, wherein the mask has a planar surface separated from a top surface of the substrate by a mask distance, and wherein a mask opening is provided through the planar surface. The method may further include positioning a mask element across the mask opening, the mask element including one or more solid portions and one or more openings, and depositing, through the mask opening, a deposition material onto the substrate, wherein the deposition material has a variable profile as a result of the one or more solid portions and the one or more openings.

公开(公告)号：US11247298B2

公开(公告)日：2022-02-15

申请号：US16716997

申请日：2019-12-17

Applicant: Applied Materials, Inc.

Inventor： Morgan Evans ,  Joseph C. Olson ,  Rutger Meyer Timmerman Thijssen

IPC: G02B5/18 ,  B23K26/34 ,  C04B41/00 ,  G02B6/34 ,  G03F7/00 ,  F21V8/00 ,  G06F3/01

Abstract: Embodiments of the present application generally relate to methods for forming a plurality of gratings. The methods generally include depositing a material over one or more protected regions of a waveguide combiner disposed on a substrate, the material having a thickness inhibiting removal of a grating material disposed on the waveguide combiner when an ion beam is directed toward the substrate, and directing the ion beam toward the substrate. The methods disclosed herein allow for formation of a plurality of gratings in one or more unprotected regions, while no gratings are formed in the protected regions.

公开(公告)号：US11205978B2

公开(公告)日：2021-12-21

申请号：US16713744

申请日：2019-12-13

Applicant: Applied Materials, Inc.

Inventor： Wayne McMillan ,  Visweswaren Sivaramakrishnan ,  Joseph C. Olson ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Naamah Argaman

IPC: H02N13/00 ,  C23F1/00 ,  G02B6/34 ,  H01L21/683 ,  C23C16/453 ,  H05H1/24 ,  H01L21/265

Abstract: Embodiments of the present disclosure generally relate to substrate support assemblies for retaining a surface of a substrate having one or more devices disposed on the surface without contacting the one or more devices and deforming the substrate, and a system having the same. In one embodiment, the substrate support assembly includes an edge ring coupled to a body of the substrate support assembly. A controller is coupled to actuated mechanisms of a plurality of pixels coupled to the body of the substrate support assembly such that portions of pixels corresponding to a portion of the surface of a substrate to be retained are positioned to support the portion without contacting one or more devices disposed on the surface of the substrate to be retained on the support surface.

公开(公告)号：US20240339288A1

公开(公告)日：2024-10-10

申请号：US18131287

申请日：2023-04-05

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Peter F. Kurunczi ,  Nirbhav Singh Chopra ,  Anthony Renau ,  Joseph C. Olson ,  Frank Sinclair

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/05 ,  H01J37/1472 ,  H01J37/3171 ,  H01J37/09 ,  H01J37/12 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/1207 ,  H01J2237/2505

Abstract: An apparatus, including an electrodynamic mass analysis (EDMA) assembly. The EDMA assembly may include a first upper electrode, disposed above a beam axis; and a first lower electrode, disposed below the beam axis, opposite the first upper electrode, the EDMA assembly arranged to receive a first RF voltage signal at a first frequency. The apparatus may include a deflection assembly, disposed downstream to the EDMA assembly, the deflection assembly comprising a blocker, disposed along the beam axis. The apparatus may include an energy spread reducer (ESR), disposed downstream to the deflection assembly, the energy spread reducer arranged to receive a second RF voltage signal at a second frequency, twice the first frequency. The ESR may include an upper ESR electrode, disposed above the beam axis; and a lower ESR electrode, disposed below the beam axis.