公开(公告)号：US07371678B2

公开(公告)日：2008-05-13

申请号：US11320587

申请日：2005-12-30

申请人： June-Woo Lee

发明人： June-Woo Lee

IPC分类号： H01L21/4763 ,  H01L23/48

CPC分类号： H01L21/76801 ,  H01L21/76807 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device with a metal line and a method of forming the same. The method includes forming an insulation layer on a semiconductor substrate including a predetermined lower structure, forming a vertical hole and a horizontal hole by etching the insulation layer, forming a supporting part by filling the vertical holes and horizontal holes with a nitride layer, and forming a damascene metal line layer by forming a metal line on the insulation layer. The method also includes performing the forming process for the damascene metal line layer a plurality of times, removing the insulation layer, and forming a protective layer on the highest layer of the damascene metal line layer.

摘要翻译： 具有金属线的半导体器件及其形成方法。 该方法包括在包括预定的下部结构的半导体衬底上形成绝缘层，通过蚀刻绝缘层形成垂直孔和水平孔，通过用氮化物层填充垂直孔和水平孔来形成支撑部分，以及形成 通过在绝缘层上形成金属线而形成镶嵌金属线层。 该方法还包括多次对镶嵌金属线层进行成形处理，去除绝缘层，以及在镶嵌金属线层的最高层上形成保护层。