公开(公告)号：US20060258064A1

公开(公告)日：2006-11-16

申请号：US11479895

申请日：2006-06-30

Applicant: Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

Inventor： Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

IPC: H01L21/84

CPC classification number: H01L29/66757 ,  H01L29/4908 ,  H01L29/66765

Abstract: A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat energy to an amorphous silicon layer. Next, crystallization occurs in the amorphous silicon layer to form poly-silicon. Therefore a poly-silicon thin film transistor is produced.

公开(公告)号：US06977206B2

公开(公告)日：2005-12-20

申请号：US10648290

申请日：2003-08-27

Applicant: Shun-Fa Huang ,  Chi-Lin Chen ,  Chiung-Wei Lin

Inventor： Shun-Fa Huang ,  Chi-Lin Chen ,  Chiung-Wei Lin

IPC: H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L21/00

CPC classification number: H01L21/02667 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L29/6675 ,  H01L29/78609

Abstract: The present invention relates to a heating plate crystallization method used in the crystallization process for the poly-silicon thin-film transistor, and more particularly, the present invention relates to a heating plate crystallization method by using a pulsed rapid thermal annealing process (PRTP). By means of the characteristic provided by the present invention, namely, the heating plate area has a better absorption rate to the infrared rays and has a high thermal stability. The heating plate area is used for absorbing the infrared rays, and after the heating, the energy is indirectly transferred to the amorphous layer via a thermal conduction method so that the amorphous layer will be rapidly crystallized to form the poly-silicon. Furthermore, the present invention uses the pulsed rapid thermal annealing process (PRTP) using the infrared rays to instantly heat, to selectively heat the materials by taking the advantage that different materials have different absorption rates to the infrared rays. However, the glass substrate and the amorphous cannot effectively absorb the infrared rays so that the glass substrate will not be broken while the process temperature of the heating plate area is excessively high (>700° C.). Therefore, the most effective rapid thermal crystallization can be achieved.

Abstract translation: 本发明涉及用于多晶硅薄膜晶体管的结晶工艺中的加热板结晶方法，更具体地说，本发明涉及使用脉冲快速热退火工艺（PRTP）的加热板结晶方法， 。 通过本发明提供的特征，即加热板区域对红外线具有更好的吸收率并具有高的热稳定性。 加热板区域用于吸收红外线，并且在加热之后，能量通过热传导方法间接转移到非晶层，使得非晶层将快速结晶以形成多晶硅。 此外，本发明使用红外线的脉冲快速热退火工艺（PRTP）立即加热，通过利用不同材料对红外线具有不同吸收率的优点来选择性地加热材料。 然而，玻璃基板和非晶体不能有效地吸收红外线，使得当加热板区域的处理温度过高（> 700℃）时玻璃基板不会断裂。 因此，可以实现最有效的快速热结晶。