公开(公告)号：US20050174311A1

公开(公告)日：2005-08-11

申请号：US10890505

申请日：2004-07-13

申请人： Jong-Moo Huh ,  Joon-Hoo Choi ,  In-Su Joo ,  Beohm-Rock Choi

发明人： Jong-Moo Huh ,  Joon-Hoo Choi ,  In-Su Joo ,  Beohm-Rock Choi

IPC分类号： H01L51/50 ,  G02F1/133 ,  G02F1/136 ,  G09F9/30 ,  G09G3/20 ,  G09G3/30 ,  G09G3/32 ,  G09G3/36 ,  H01L27/32 ,  H01L29/786 ,  H05B33/14

CPC分类号： G09G3/3233 ,  G09G2300/0417 ,  G09G2300/0823 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2300/0866 ,  G09G2310/0254 ,  G09G2320/0233 ,  G09G2320/043

摘要： A method of driving a transistor, a driving element using the same, and a display panel and a display apparatus having the driving element are provided. The method for driving a transistor comprises: receiving a bias voltage at a first electrode of a driving transistor; outputting a first signal having a first polarity from a first electrode of a switching transistor to a capacitor and a control electrode of the driving transistor when a select line is activated for driving an organic display element; and outputting a second signal having a second polarity from the first electrode of the switching transistor to the capacitor and the control electrode of the driving transistor when the select line is activated for dissipating a charge in the driving transistor and for deactivating the organic display element.

摘要翻译： 提供驱动晶体管的方法，使用其的驱动元件以及具有驱动元件的显示面板和显示装置。 驱动晶体管的方法包括：在驱动晶体管的第一电极处接收偏置电压; 当选择线被激活用于驱动有机显示元件时，从开关晶体管的第一电极向电容器输出具有第一极性的第一信号和驱动晶体管的控制电极; 以及当所述选择线被激活以耗散所述驱动晶体管中的电荷并且使所述有机显示元件去激活时，从所述开关晶体管的所述第一电极向所述电容器和所述驱动晶体管的控制电极输出具有第二极性的第二信号。

公开(公告)号：US20050127367A1

公开(公告)日：2005-06-16

申请号：US10996303

申请日：2004-11-22

申请人： Jong-Moo Huh ,  Joon-Hak Oh ,  Joon-Hoo Choi ,  In-Su Joo ,  Beohm-Rock Choi

发明人： Jong-Moo Huh ,  Joon-Hak Oh ,  Joon-Hoo Choi ,  In-Su Joo ,  Beohm-Rock Choi

IPC分类号： G02F1/136 ,  H01L21/77 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L31/036

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/78696

摘要： A thin film transistor is provided, which includes: a semiconductor layer including an intrinsic portion; a gate electrode overlapping the intrinsic portion; a gate insulating layer disposed between the semiconductor layer and the gate electrode; and source and drain electrodes that have edges opposing each other with respect to the intrinsic portion of the semiconductor layer and are connected to the semiconductor layer, wherein the intrinsic portion has a curved surface contacting the gate insulating layer.

摘要翻译： 提供一种薄膜晶体管，其包括：包括本征部分的半导体层; 栅电极与本征部分重叠; 设置在所述半导体层和所述栅极之间的栅极绝缘层; 以及源极和漏极，其具有相对于半导体层的本征部分彼此相对的边缘并且连接到半导体层，其中本征部分具有与栅极绝缘层接触的弯曲表面。