公开(公告)号：US06268299B1

公开(公告)日：2001-07-31

申请号：US09668988

申请日：2000-09-25

申请人： Rajarao Jammy ,  Johnathan E. Faltermeier ,  Keitaro Imai ,  Ryota Katsumata ,  Jean-Marc Rousseau ,  Viraj Y. Sardesai ,  Joseph F. Shepard, Jr.

发明人： Rajarao Jammy ,  Johnathan E. Faltermeier ,  Keitaro Imai ,  Ryota Katsumata ,  Jean-Marc Rousseau ,  Viraj Y. Sardesai ,  Joseph F. Shepard, Jr.

IPC分类号： H01L21318

CPC分类号： C23C14/0652 ,  H01L21/3185

摘要： A low-temperature process for forming a highly conformal barrier film during integrated circuit manufacture by low pressure chemical vapor deposition (LPCVD). The process includes the following steps. First, the process provides ammonia and a silicon-containing gas selected from the group consisting of silane, dichlorosilane, bistertiarybutylaminosilanc, hexachlorodisilane, and mixtures of those compositions. The ratio of the volume of ammonia to the volume of the silicon-containing gas is adjusted to yield silicon concentrations greater than 43 atomic percent in the resultant film. The process applies a deposition temperature of 550° C. to 720° C. The ammonia and the silicon-containing gas are reacted at the deposition temperature to form a silicon-rich nitride film less than 200 Å thick. Finally, the silicon nitride film is deposited by low pressure chemical vapor deposition.

摘要翻译： 在低压化学气相沉积（LPCVD）的集成电路制造过程中形成高保形阻挡膜的低温工艺。 该过程包括以下步骤。 首先，该方法提供氨和含硅气体，其选自硅烷，二氯硅烷，二丁基氨基硅烷，六氯二硅烷，以及这些组合物的混合物。 调节氨体积与含硅气体体积的比例，得到所得膜中硅浓度大于43原子百分比。 该方法将沉积温度为550℃至720℃。氨和含硅气体在沉积温度下反应，形成厚度小于200埃的富硅氮化物膜。 最后，通过低压化学气相沉积沉积氮化硅膜。