公开(公告)号：US20130229864A1

公开(公告)日：2013-09-05

申请号：US13774181

申请日：2013-02-22

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonino Conte ,  Kailash Khairnar ,  FrancescoNino Mammoliti

IPC: G11C13/00

CPC classification number: G11C13/0004 ,  G11C5/145 ,  G11C5/147 ,  G11C13/0038 ,  G11C13/0069

Abstract: A driving stage for a phase change non-volatile memory device may include an output driving unit, which supplies an output driving current during programming of a memory cell, a driving-control unit, which receives an input current and generates a first control signal for controlling supply of the output driving current in such a way that a value thereof has a desired relation with the input current, and a level-shifter element, which carries out a level shift of a voltage of the first control signal for supplying to the output driving unit a second control signal, having a voltage value that is increased with respect to, and is a function of, the first control signal. A calibration unit may carry out an operation of updating of the value of a shift voltage across the level-shifter element, as the value of the input current varies.

Abstract translation: 用于相变非易失性存储器件的驱动级可以包括输出驱动单元，其在存储单元的编程期间提供输出驱动电流;驱动控制单元，其接收输入电流并产生第一控制信号， 控制输出驱动电流的供给，使得其值与输入电流具有期望的关系;电平移动元件，其执行用于提供给输出的第一控制信号的电压的电平偏移 驱动单元具有第二控制信号，其具有相对于第一控制信号增加并且是第一控制信号的函数的电压值。 校准单元可以执行更新跨越电平移位器元件的移位电压的值的操作，因为输入电流的值变化。