公开(公告)号：US11871635B2

公开(公告)日：2024-01-09

申请号：US16883943

申请日：2020-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sang Hoon Kim ,  Seungchan Lee ,  Gun Hee Kim ,  Donghyun Kim ,  Soohyun Moon ,  Joohee Jeon ,  Sungjin Hong ,  Taehoon Yang

IPC: H01L21/00 ,  H10K59/35 ,  H10K59/00 ,  H10K59/121 ,  H10K59/131

CPC classification number: H10K59/353 ,  H10K59/00 ,  H10K59/121 ,  H10K59/131

Abstract: Disclosed are display panels and display devices. The display panel comprises a base layer which includes a first region and a second region having a first sub-region and a second sub-region, first pixels in the first region, and second pixels in the first sub-region. Each of the first and second pixels includes a pixel electrode, an emission layer on the pixel electrode, and a common electrode on the emission layer. The pixel electrode is shifted relative to the emission layer in a direction away from the second sub-region.

公开(公告)号：US20230329020A1

公开(公告)日：2023-10-12

申请号：US18161029

申请日：2023-01-27

Applicant: Samsung Display Co., Ltd.

Inventor： Kwang Soo Bae ,  Gun Hee Kim ,  Dae Young Lee ,  Sang Hwan Cho

IPC: H10K39/34 ,  G06F3/044 ,  G06V40/13 ,  H10K59/122 ,  H10K59/38 ,  H10K59/40 ,  H10K59/80

CPC classification number: H10K39/34 ,  G06F3/0445 ,  G06V40/1318 ,  H10K59/122 ,  H10K59/38 ,  H10K59/40 ,  H10K59/873 ,  H10K59/8792

Abstract: A display device includes a substrate; and a plurality of unit pixels disposed on the substrate and including sub-pixels and photo-sensing pixels. Each of the sub-pixels includes a light emitting element and a light emitting area from which light is emitted. Each of the photo-sensing pixels includes a light receiving area and a light receiving element disposed therein and outputting a sensing signal corresponding to a degree of sensed light. The light emitting area and the light receiving area are spaced apart from each other on the substrate. The light emitting area and the light receiving area each have a polygonal shape. Aa shape of the light emitting area is different from a shape of the light receiving area.

公开(公告)号：US11569300B2

公开(公告)日：2023-01-31

申请号：US17693453

申请日：2022-03-14

Applicant: Samsung Display Co., LTD.

Inventor： Juchan Park ,  Sunho Kim ,  Ja Eun Lee ,  Gun Hee Kim ,  Jieun Kim ,  Sun Hee Lee

IPC: G09G3/3233 ,  H01L27/32

Abstract: A display device includes a first display area and a second display area located on opposite sides of a display area. The display device includes first through third sub-pixels. The first through third sub-pixels are disposed in the first and second display areas. The first and second sub-pixels are arranged in a first column adjacent to a first boundary, and the third sub-pixels are arranged in a second column. The second and first sub-pixels are arranged in a third column adjacent to a second boundary, and the third sub-pixels are arranged in a fourth column. The third sub-pixels are arranged in a first column and a second column of the first sub-area. The first and second sub-pixels are arranged in a first column and a second column of the third sub-area. The first to third sub-pixels are not disposed in the second column of the first and third sub-areas.

公开(公告)号：US20220310761A1

公开(公告)日：2022-09-29

申请号：US17537512

申请日：2021-11-30

Applicant: Samsung Display Co., LTD.

Inventor： Sun Ho KIM ,  Ju Chan Park ,  Yoo Min Ko ,  Gun Hee Kim ,  Tae Hoon Yang ,  Sun Hee Lee ,  Ja Eun Lee

IPC: H01L27/32

Abstract: A display device includes: a substrate having a first display area and a second display area. A first pixel circuit portion is disposed on the substrate. A first emitting diode includes a first pixel electrode connected to the first pixel circuit portion. A second pixel circuit portion is disposed on a second display area of the substrate. An extension wire is connected to the second pixel circuit portion. A second emitting diode includes a second pixel electrode connected to the extension wire, and a driving circuit portion is connected to the first pixel circuit portion and the second pixel circuit portion, and overlaps the second emitting diode. The extension wire is disposed in a different layer from the second pixel electrode.

公开(公告)号：US11443683B2

公开(公告)日：2022-09-13

申请号：US16888108

申请日：2020-05-29

Applicant: Samsung Display Co., LTD.

Inventor： Dong Hyun Kim ,  Gun Hee Kim ,  Sang Hoon Kim ,  Soo Hyun Moon ,  Seung Chan Lee ,  Joo Hee Jeon ,  Sung Jin Hong ,  Tae Hoon Yang

IPC: G09G3/3225 ,  G09G3/20

Abstract: A display device: a substrate including a first display area and a second display area; a signal line which overlaps the first display area and the second display area; and a common electrode which overlaps the first display area and the second display area, where the first display area includes a first pixel area, the second display area includes a second pixel area and a transmitting area, the transmitting area includes a first transmitting area and a second transmitting area, which have different transmittances from each other, the common electrode overlaps the first pixel area, the second pixel area and the second transmitting area, and in the second transmitting area, at least a part of the signal line and the common electrode overlap each other.

公开(公告)号：US11387307B2

公开(公告)日：2022-07-12

申请号：US16928840

申请日：2020-07-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seung Chan Lee ,  Gun Hee Kim ,  Sung Jin Hong ,  Yoo Min Ko

IPC: H01L29/08 ,  H01L27/32

Abstract: A display device includes a display panel including a main area and a sensor area. Sensor devices overlap the sensor area of the display panel in a thickness direction of the display panel. The display panel includes first subpixels, which are disposed in the sensor area, and second subpixels, which are disposed in the main area. The number of transistors of each of the first subpixels is different from the number of transistors of each of the second subpixels.

公开(公告)号：US20220208103A1

公开(公告)日：2022-06-30

申请号：US17499820

申请日：2021-10-12

Applicant: Samsung Display Co., Ltd,

Inventor： Sunho Kim ,  Gun Hee Kim ,  Taehoon Yang ,  Sun Hee Lee ,  Sungjin Hong

IPC: G09G3/3266 ,  G09G3/3275

Abstract: An electronic device includes a display panel, a scan driving circuit, and a data driving circuit. The display panel includes a plurality of scan lines, a plurality of data lines, and a plurality of pixels. The scan driving circuit is configured to apply a scan signal to the scan lines. The data driving circuit is configured to apply a data signal to the data lines. The scan lines extend in a first direction. The scan driving circuit and the data driving circuit are arranged in the first direction.

公开(公告)号：US20220157221A1

公开(公告)日：2022-05-19

申请号：US17465845

申请日：2021-09-03

Applicant: Samsung Display Co., Ltd.

Inventor： Sunho Kim ,  Juchan Park ,  Gun Hee Kim ,  Hyewon Kim ,  Taehoon Yang ,  Sun Hee Lee ,  Joohee Jeon ,  Sungjin Hong

IPC: G09G3/20

Abstract: A display device includes a display panel including a plurality of first pixels disposed in a first display area and a plurality of second pixels disposed in a second display area adjacent to the first display area, a gate driver disposed in the second display area of the display panel to overlap a portion of of the second pixels and driving the first and second pixels, a controller receiving image data and converting the image data to image signals, and a data driver converting the image signals to data signals and outputting the data signals to the first and second pixels. The controller compensates for effective data corresponding to the second pixels and reflects the compensated effective data to the image signals.

公开(公告)号：US10256091B2

公开(公告)日：2019-04-09

申请号：US15290715

申请日：2016-10-11

Applicant: Kobe Steel, Ltd. ,  Samsung Display Co., Ltd.

Inventor： Hiroaki Tao ,  Aya Miki ,  Shinya Morita ,  Satoshi Yasuno ,  Toshihiro Kugimiya ,  Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn ,  Gun Hee Kim

IPC: H01L21/00 ,  H01L21/02 ,  H01L29/786 ,  H01L29/12 ,  H01L29/66 ,  H01L21/477 ,  G02F1/1368

Abstract: The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])≤0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])≤0.3  (1), [In]/([In]+[Zn]+[Sn])≤1.4×{[Zn]/([Zn]+[Sn])}−0.5  (2), [Zn]/([In]+[Zn]+[Sn])≤0.83  (3), and 0.1≤[In]/([In]+[Zn]+[Sn])  (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.

公开(公告)号：US09553201B2

公开(公告)日：2017-01-24

申请号：US14179452

申请日：2014-02-12

Applicant: Samsung Display Co., Ltd. ,  Kobe Steel, Ltd.

Inventor： Byung Du Ahn ,  Ji Hun Lim ,  Gun Hee Kim ,  Kyoung Won Lee ,  Je Hun Lee ,  Hiroshi Goto ,  Aya Miki ,  Shinya Morita ,  Toshihiro Kugimiya ,  Yeon Hong Kim ,  Yeon Gon Mo ,  Kwang Suk Kim

IPC: H01L27/14 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/78696

Abstract: The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.

Abstract translation: 本发明构思涉及薄膜晶体管和薄膜晶体管阵列面板，并且详细地涉及包括氧化物半导体的薄膜晶体管。 根据本发明构思的示例性实施例的薄膜晶体管包括：栅电极; 位于栅极电极上或下方的栅极绝缘层; 第一半导体和第二半导体，其与栅电极重叠，栅极绝缘层插入其间，第一半导体和第二半导体彼此接触; 连接到所述第二半导体的源电极; 和连接到第二半导体并面向源电极的漏电极，其中第二半导体包括不包括在第一半导体中的镓（Ga），并且第二半导体中的镓（Ga）的含量大于0 。 ％且小于或等于约33at。 ％。