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    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    61.
    发明申请
    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
    图像传感器和电子设备，包括它们

    公开(公告)号：US20160093675A1

    公开(公告)日：2016-03-31

    申请号：US14631438

    申请日：2015-02-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Kwang Hee LEE ,  Dong-Seok LEEM ,  Yong Wan JIN

    IPC: H01L27/30 ,  H01L51/44

    CPC classification number: H01L27/307 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14647 ,  H01L51/441

    Abstract: An image sensor including a semiconductor substrate integrated with a plurality of photo-sensing devices and a nanopattern layer on the semiconductor substrate, the nanopattern layer having a plurality of nanopatterns, wherein a single nanopattern of the plurality of nanopatterns corresponds to a single photo-sensing device in the plurality of photo-sensing devices.

    Abstract translation: 一种图像传感器，包括与多个感光装置集成的半导体衬底和半导体衬底上的纳米图案层，所述纳米图案层具有多个纳米图案，其中所述多个纳米图案中的单个纳米图案对应于单个光感测 装置在多个感光装置中。

    STACKED IMAGE SENSOR
    62.
    发明申请
    STACKED IMAGE SENSOR 有权
    堆叠图像传感器

    公开(公告)号：US20160065913A1

    公开(公告)日：2016-03-03

    申请号：US14660383

    申请日：2015-03-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyung Bae PARK ,  Gae Hwang LEE ,  Kwang Hee LEE ,  Yong Wan JIN ,  Chul Joon HEO

    IPC: H04N9/04

    CPC classification number: H04N5/374 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14647 ,  H04N9/045

    Abstract: A stacked image sensor includes a substrate including a first photoelectric conversion device, a second photoelectric conversion device and a first color signal storing device disposed between the first photoelectric conversion device and the second photoelectric conversion device. A second color filter and a third color filter are disposed at positions corresponding to the first photoelectric conversion device and the second photoelectric conversion device on the substrate. A conductive connecting member is disposed between the second color filter and the third color filter. A first color sensing photoelectric conversion device is disposed on the second color filter, the third color filter, and the conductive connecting member. The cross-sectional area of conductive connecting member is at least greater than the cross-sectional area of the first color signal storing device.

    Abstract translation: 堆叠图像传感器包括：基板，包括第一光电转换装置，第二光电转换装置和设置在第一光电转换装置和第二光电转换装置之间的第一颜色信号存储装置。 第二滤色器和第三滤色器设置在与基板上的第一光电转换元件和第二光电转换元件对应的位置上。 导电连接构件设置在第二滤色器和第三滤色器之间。 第一彩色感测光电转换装置设置在第二滤色器，第三滤色器和导电连接件上。 导电连接构件的横截面积至少大于第一颜色信号存储装置的横截面面积。

    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    63.
    发明申请
    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
    图像传感器和电子设备，包括它们

    公开(公告)号：US20160049448A1

    公开(公告)日：2016-02-18

    申请号：US14584290

    申请日：2014-12-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwang-hee LEE ,  Kyung Bae PARK ,  Gae Hwang LEE ,  Dong-Seok LEEM ,  Yong Wan JIN

    IPC: H01L27/30 ,  H01L51/44

    CPC classification number: H01L27/307 ,  H01L51/424 ,  H01L51/442 ,  H01L2251/301 ,  Y02E10/549

    Abstract: Example embodiments relate to an image sensor that includes a semiconductor substrate integrated with at least one photo-sensing device, an impurity-doped first light-transmitting electrode present in the semiconductor substrate, an organic photoelectric conversion layer positioned on one side of the semiconductor substrate and absorbing light in a different wavelength from the wavelength sensed by the photo-sensing device, and a second light-transmitting electrode positioned on one side of the organic photoelectric conversion layer, and an electronic device including the same.

    Abstract translation: 示例实施例涉及一种图像传感器，其包括与至少一个感光装置集成的半导体衬底，存在于半导体衬底中的掺杂杂质的第一透光电极，位于半导体衬底一侧的有机光电转换层 并且吸收与由感光装置感测的波长不同的波长的光和位于有机光电转换层的一侧的第二透光电极和包括该光电转换层的电子装置。

    PHOTOELECTRIC DEVICES AND IMAGE SENSORS AND ELECTRONIC DEVICES
    68.
    发明申请
    PHOTOELECTRIC DEVICES AND IMAGE SENSORS AND ELECTRONIC DEVICES 有权

    公开(公告)号：US20210273186A1

    公开(公告)日：2021-09-02

    申请号：US17306116

    申请日：2021-05-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae PARK ,  Takkyun RO ,  Kiyohiko TSUTSUMI ,  Chul Joon HEO ,  Yong Wan JIN

    IPC: H01L51/42 ,  H01L27/146 ,  H01L51/00 ,  H01L27/30 ,  H01L51/44

    Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λmax1) of the first photoelectric conversion layer and a peak absorption wavelength (λmax2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

    IMAGE SENSORS AND ELECTRONIC DEVICES
    69.
    发明申请
    IMAGE SENSORS AND ELECTRONIC DEVICES 有权

    公开(公告)号：US20210242271A1

    公开(公告)日：2021-08-05

    申请号：US17097329

    申请日：2020-11-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae PARK ,  Yong Wan JIN ,  Sun Young YUN ,  Sung Jun PARK ,  Feifei FANG ,  Chul Joon HEO

    IPC: H01L27/146 ,  H01L31/0352

    Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

    IMAGE SENSORS AND ELECTRONIC DEVICES
    70.
    发明申请
    IMAGE SENSORS AND ELECTRONIC DEVICES 有权

    公开(公告)号：US20210235046A1

    公开(公告)日：2021-07-29

    申请号：US17227676

    申请日：2021-04-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Kwang Hee LEE ,  Kyung Bae PARK ,  Sung Young YUN ,  Dong-Seok LEEM ,  Yong Wan JIN

    IPC: H04N9/04 ,  H04N5/32 ,  H01L27/146

    Abstract: An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate stacked with the photoelectric device and including first and second photo-sensing devices configured to sense light associated with second and third colors of the three primary colors, respectively, a first color filter corresponding to the first photo-sensing device and configured to selectively transmit light of the first wavelength spectrum, a second color filter corresponding to the second photo-sensing device and configured to selectively transmit light associated with a mixed color of the first color and the third color, and a first insulating layer between the photoelectric device and the semiconductor substrate and corresponding to the second photo-sensing device, and configured to selectively reflect light of a part of visible light.

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