公开(公告)号：US20060068526A1

公开(公告)日：2006-03-30

申请号：US10544129

申请日：2004-02-20

申请人： Satoshi Takei ,  Kazuhisa Ishii ,  Takahiro Kishioka ,  Yasushi Sakaida

发明人： Satoshi Takei ,  Kazuhisa Ishii ,  Takahiro Kishioka ,  Yasushi Sakaida

IPC分类号： H01L21/48 ,  C08K5/06

CPC分类号： G03F7/094 ,  G03F7/038 ,  Y10S430/109 ,  Y10S430/128

摘要： There is provided a gap fill material forming composition for lithography that is used in dual damascene process and is excellent in flattening property and fill property. Concretely, it is a gap fill material forming composition characterized in that the composition is used in manufacture of semiconductor device by a method comprising coating a photoresist on a semiconductor substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the semiconductor substrate by use of lithography process, and that comprises a polymer, a crosslinking agent and a solvent.

摘要翻译： 提供了一种用于光刻的间隙填充材料形成组合物，其用于双镶嵌工艺，并且具有优异的压平性能和填充性能。 具体地说，它是一种间隙填充材料形成组合物，其特征在于该组合物用于制造半导体器件，方法包括在具有高度/直径为1或更大的高宽比的孔的半导体衬底上涂覆光致抗蚀剂，以及 通过使用光刻工艺将图像转印到半导体衬底，并且包括聚合物，交联剂和溶剂。