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公开(公告)号：US20240345483A1
公开(公告)日：2024-10-17
申请号：US18601583
申请日：2024-03-11
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor： Naoki KOBAYASHI , Nobuhiro Nagamachi , Kenta Ishiwata , Daisuke Kori
CPC classification number: G03F7/11 , G03F7/0752 , G03F7/094
Abstract: The present invention is a method for forming a resist underlayer film, including the steps of: (i) coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; (ii) forming a cured film by heating the coated substrate at a temperature of 100° C. or higher and 600° C. or lower for 10 seconds to 7,200 seconds for curing; and (iii) forming a resist underlayer film by irradiating the cured film with plasma, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.
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2.发明公开公开(公告)号：US20240319598A1
公开(公告)日：2024-09-26
申请号：US18594575
申请日：2024-03-04
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor： Takehiro SATO , Shun Kikuchi , Ryo Mitsui , Seiichiro Tachibana
CPC classification number: G03F7/0758 , G03F7/094 , G03F7/167 , G03F7/2016 , G03F7/2037
Abstract: The present invention is a composition for forming a silicon-containing resist underlayer film, containing a condensation reaction-type thermosetting silicon-containing material (Sx), being a polysiloxane resin, where the material has a non-condensation reactive organic group that reacts with a radical chemical species, the resin includes more than 0 and 70 mol % or less of one or more of a repeating unit represented by the following general formula (Sx-4) and a repeating unit represented by the general formula (Sx-5), and the organic group remains unreacted after a heat-curing reaction of the polysiloxane resin. This provides: a composition for forming a resist underlayer film containing a thermosetting silicon-containing material in photolithography using a high-energy beam, the material improving sensitivity, LWR, and resolution of an upper layer resist and further contributing to the prevention of pattern collapse; and a patterning process using the composition for forming a resist underlayer film.
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公开(公告)号：US20240274637A1
公开(公告)日：2024-08-15
申请号：US18643860
申请日：2024-04-23
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Wei-Chao CHIU , Chun-Wei CHANG , Ching-Sen KUO , Feng-Jia SHIU
IPC: H01L27/146 , G03F7/09
CPC classification number: H01L27/1463 , H01L27/14609 , H01L27/14685 , H01L27/14687 , G03F7/094
Abstract: A method includes performing a first lithography process using a first pattern of a first photomask to form a first photoresist pattern on a front side of a device substrate; performing a first implantation process using the first pattern as a mask to form first isolation regions in the device substrate; after performing the first implantation process, performing a second lithography process using a second pattern of a second photomask to form a second photoresist pattern on the front side of the device substrate, the second pattern being shifted from the first pattern by a distance less than the first pitch and in the first direction; performing a second implantation process using the second photoresist pattern as a mask to form second isolation regions in the device substrate and spaced apart from the first isolation regions; and forming pixels between the first and second isolation regions.
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4.发明授权公开(公告)号：US12032286B2
公开(公告)日：2024-07-09
申请号：US16902962
申请日：2020-06-16
Applicant: ASAHI KASEI KABUSHIKI KAISHA , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Inventor： Hidenori Nagai , Shunsuke Furutani , Kanako Mizumura , Yuzo Kotani
CPC classification number: G03F7/0035 , B01L3/502707 , B81C1/00071 , G03F7/094 , G03F7/32 , B81C2201/0159
Abstract: Provided is a method for producing a multi-layered microchannel device by using a photosensitive resin laminate, which is highly-defined and excellent in dimension accuracy and enables channels to be partially hydrophilized or hydrophobilized, wherein the method comprises step (i) of sequentially carrying out (i-a) forming a first photosensitive resin layer on a substrate, (i-b) light-exposing the first photosensitive resin layer, and (i-c) developing the light-exposed photosensitive layer and forming a channel pattern layer, to form a first channel pattern layer; and step (ii) of sequentially carrying out (ii-a) laminating a second photosensitive resin laminate on the first channel pattern layer formed in the step (i), (ii-b) light-exposing a photosensitive layer of the second photosensitive resin laminate, and (ii-c) developing the light-exposed photosensitive layer and forming a channel pattern layer, to form a second channel pattern layer.
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公开(公告)号：US20240198675A1
公开(公告)日：2024-06-20
申请号：US18593420
申请日：2024-03-01
Applicant: Funai Electric Co., Ltd.
Inventor： Sean T. Weaver
CPC classification number: B41J2/1433 , B41J2/1603 , B41J2/162 , B41J2/1623 , B41J2/1626 , B41J2/1631 , B41J2/164 , G03F7/004 , G03F7/0046 , G03F7/038 , G03F7/094 , G03F7/11 , G03F7/40 , B41J2202/03
Abstract: A composite photoresist material and method of making the composite photoresist material. The composite photoresist material includes: a photoresist layer devoid of a phenoxy resin, and a photoresist layer containing a phenoxy resin.
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Patent Agency Ranking
6.发明授权公开(公告)号：US12013640B2
公开(公告)日：2024-06-18
申请号：US17329767
申请日：2021-05-25
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor： Takayoshi Nakahara , Takeru Watanabe , Daisuke Kori , Yusuke Biyajima , Tsutomu Ogihara
IPC: G03F7/11 , C07C233/18 , C07C233/47 , C07C233/55 , C07D251/34 , C07D487/04 , C08F38/00 , C09D149/00 , G03F7/09
CPC classification number: G03F7/11 , C07C233/18 , C07C233/47 , C07C233/55 , C07D251/34 , C07D487/04 , C08F38/00 , C09D149/00 , G03F7/094 , C07C2603/18
Abstract: A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an “m” number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH2)p—; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; R01 represents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.
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公开(公告)号：US12007695B2
公开(公告)日：2024-06-11
申请号：US17150171
申请日：2021-01-15
Inventor： Robert Magnusson , Kyu Lee , Hafez Hemmati , Pawarat Bootpakdeetam
CPC classification number: G03F7/70408 , G03F7/0035 , G03F7/094 , G03F7/162
Abstract: A method of fabricating a metasurface comprises coating a photoresist film onto a substrate and loading the coated substrate into a laser interference lithography setup, exposing the photoresist film via a laser with a first interference pattern, the first interference pattern having a first period and a first exposure energy, subsequently exposing the coated substrate with a second interference pattern, the second interference pattern having a second period and a second exposure energy, developing the exposed portions of the photoresist film to form a periodic pattern in the photoresist, and transferring the periodic pattern into the substrate, the substrate supporting an appropriate film system that embodies the final metasurface device.
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公开(公告)号：US11990339B2
公开(公告)日：2024-05-21
申请号：US17391537
申请日：2021-08-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jian-Jou Lian , Yao-Wen Hsu , Neng-Jye Yang , Li-Min Chen , Chia-Wei Wu , Kuan-Lin Chen , Kuo Bin Huang
IPC: H01L21/027 , G03F7/09 , G03F7/20 , G03F7/32 , H01L21/02 , H01L21/033 , H01L21/311 , G03F7/095 , H01L21/306
CPC classification number: H01L21/0273 , G03F7/094 , G03F7/20 , G03F7/32 , H01L21/0228 , H01L21/0332 , H01L21/0337 , H01L21/31111 , G03F7/095 , H01L21/30608
Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.
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公开(公告)号：US11982943B2
公开(公告)日：2024-05-14
申请号：US17732807
申请日：2022-04-29
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Jaeyeol Baek , Shinhyo Bae , Yoojeong Choi , Soonhyung Kwon , Hyeon Park
CPC classification number: G03F7/0955 , G03F7/0045 , G03F7/0392 , G03F7/066 , G03F7/094
Abstract: A resist underlayer composition and a method of forming patterns, the composition including a polymer including at least one of a first moiety represented by Chemical Formula 1-1 and a second moiety represented by Chemical Formula 1-2; a thermal acid generator including a salt composed of an anion of an acid and a cation of a base, the base having pKa of greater than or equal to about 7; and a solvent,
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公开(公告)号：US11958292B2
公开(公告)日：2024-04-16
申请号：US17206344
申请日：2021-03-19
Applicant: Funai Electric Co., Ltd.
Inventor： Sean T. Weaver
CPC classification number: B41J2/1433 , B41J2/1603 , B41J2/162 , B41J2/1623 , B41J2/1626 , B41J2/1631 , B41J2/164 , G03F7/004 , G03F7/0046 , G03F7/038 , G03F7/094 , G03F7/11 , G03F7/40 , B41J2202/03
Abstract: A composite photoresist material and method of making the composite photoresist material. The composite photoresist material includes: a photoresist layer devoid of a phenoxy resin, and a photoresist layer containing a phenoxy resin.
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