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    TWO STEP PHOTORESIST STRIPPING METHOD SEQUENTIALLY USING ION ACTIVATED AND NON-ION ACTIVATED NITROGEN CONTAINING PLASMAS
    61.
    发明申请
    TWO STEP PHOTORESIST STRIPPING METHOD SEQUENTIALLY USING ION ACTIVATED AND NON-ION ACTIVATED NITROGEN CONTAINING PLASMAS 审中-公开
    使用离子激活和非离子激活的含有等离子体氮的顺序光电离子方法

    公开(公告)号：US20080303069A1

    公开(公告)日：2008-12-11

    申请号：US11760885

    申请日：2007-06-11

    申请人： Nicholas C.M. Fuller ,  Solomon Assefa ,  Ying Zhang

    发明人： Nicholas C.M. Fuller ,  Solomon Assefa ,  Ying Zhang

    IPC分类号： H01L21/467 ,  H01L29/78

    CPC分类号： H01L21/31138 ,  H01L21/28035 ,  H01L29/7833

    摘要： A two-step nitrogen plasma method is used for stripping a photoresist layer from over a substrate. A first step within the two-step nitrogen plasma method uses a nitrogen plasma with ion activation to form from the photoresist layer over the substrate a treated photoresist layer over the substrate. A second step within the two-step nitrogen plasma method uses a second nitrogen plasma without ion activation to remove the treated photoresist layer from over the substrate. The method is particularly useful for stripping a patterned photoresist layer that is used for forming a gate electrode from a gate electrode material layer.

    摘要翻译： 使用两步氮等离子体方法从衬底上剥离光致抗蚀剂层。 在两步氮等离子体方法中的第一步骤是使用具有离子激活的氮等离子体从衬底上的光致抗蚀剂层形成在衬底上的处理的光致抗蚀剂层。 在两步氮等离子体方法中的第二步骤是使用没有离子激活的第二氮等离子体从衬底上除去经处理的光致抗蚀剂层。 该方法对于从栅电极材料层剥离用于形成栅电极的图案化光致抗蚀剂层特别有用。

    Polarization diverse demultiplexing
    64.
    发明授权
    Polarization diverse demultiplexing 有权
    极化多样化解复用

    公开(公告)号：US08948548B2

    公开(公告)日：2015-02-03

    申请号：US13611229

    申请日：2012-09-12

    申请人： Solomon Assefa ,  Douglas M. Gill ,  William M. Green

    发明人： Solomon Assefa ,  Douglas M. Gill ,  William M. Green

    IPC分类号： G02B6/12

    CPC分类号： G02B6/12023 ,  G02B6/2793 ,  G02B6/293

    摘要： A method for demultiplexing an optical signal includes receiving a multi polarization optical signal, separating the multi polarization optical signal into a first polarization optical signal and a second polarization optical signal, rotating a polarization of the first polarization optical signal to match a polarization of the second polarization optical signal, routing the first polarization optical signal and the second polarization optical signal to a common demultiplexing device, outputting a channel of the first polarization optical signal and the second polarization optical signal to a common photodetector.

    摘要翻译： 一种用于解复用光信号的方法包括：接收多偏振光信号，将多偏振光信号分离为第一偏振光信号和第二偏振光信号，旋转第一偏振光信号的偏振以匹配第二偏振光信号的偏振 偏振光信号，将第一偏振光信号和第二偏振光信号路由到公共解复用器件，将第一偏振光信号和第二偏振光信号的通道输出到公共光电检测器。

    Method for forming a self-aligned hard mask for contact to a tunnel junction
    66.
    发明授权
    Method for forming a self-aligned hard mask for contact to a tunnel junction 有权
    形成用于与隧道结接触的自对准硬掩模的方法

    公开(公告)号：US08847338B2

    公开(公告)日：2014-09-30

    申请号：US13426845

    申请日：2012-03-22

    申请人： Solomon Assefa ,  Sivananda K. Kanakasabapathy

    发明人： Solomon Assefa ,  Sivananda K. Kanakasabapathy

    IPC分类号： H01L29/84

    CPC分类号： H01L29/82 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

    摘要： A magnetic memory cell having a self-aligned hard mask for contact to a magnetic tunnel junction is provided. For example, a magnetic memory cell includes a magnetic storage element formed on a semiconductor substrate, and a hard mask that is self-aligned with the magnetic storage element. The hard mask includes a hard mask material layer formed on an upper surface of a magnetic stack in the magnetic storage element, an anti-reflective coating (ARC) layer formed on at least a portion of an upper surface of the hard mask material layer, wherein the ARC layer is selected to be removable by a wet etch, and a photoresist layer formed on at least a portion of an upper surface of the ARC layer. The selected portions of the ARC layer and photoresist layer are removed in a same processing step with wet etch techniques without interference to the magnetic stack.

    摘要翻译： 提供具有用于与磁性隧道结接触的自对准硬掩模的磁存储单元。 例如，磁存储单元包括形成在半导体衬底上的磁存储元件和与磁存储元件自对准的硬掩模。 硬掩模包括形成在磁性存储元件中的磁性堆叠的上表面上的硬掩模材料层，形成在硬掩模材料层的上表面的至少一部分上的抗反射涂层（ARC）层， 其中所述ARC层被选择为通过湿蚀刻可去除，以及形成在所述ARC层的上表面的至少一部分上的光致抗蚀剂层。 通过湿蚀刻技术在相同的处理步骤中除去ARC层和光致抗蚀剂层的选定部分，而不会干扰磁性堆叠。

    POLARIZATION DIVERSE DEMULTIPLEXING
    67.
    发明申请
    POLARIZATION DIVERSE DEMULTIPLEXING 有权
    极化多重分解

    公开(公告)号：US20140064729A1

    公开(公告)日：2014-03-06

    申请号：US13603811

    申请日：2012-09-05

    申请人： Solomon Assefa ,  Douglas M. Gill ,  William M. Green

    发明人： Solomon Assefa ,  Douglas M. Gill ,  William M. Green

    IPC分类号： H04J14/06

    CPC分类号： G02B6/12023 ,  G02B6/2793 ,  G02B6/293

    摘要： An optical demultiplexing device includes a first portion operative to receive an input optical signal having a first polarization, a second polarization and multiple channels, and split the input optical signal into a first optical signal having the first polarization and a second optical signal having the first polarization, and an optical demultiplexing portion communicatively connected to the polarization splitter portion, the optical demultiplexing portion operative to receive a combination of the first optical signal and the second optical signal, and output each channel of the first optical signal and the second optical signal to a photodetector device corresponding to each channel.

    摘要翻译： 光解复用装置包括第一部分，其操作以接收具有第一偏振光，第二偏振光和多通道的输入光信号，并将输入光信号分离为具有第一偏振的第一光信号和具有第一偏振的第二光信号 偏振光，以及通信地连接到偏振分离器部分的光解复用部分，光解复用部分用于接收第一光信号和第二光信号的组合，并将第一光信号和第二光信号的每个通道输出到 对应于每个通道的光电检测器装置。

    POLARIZATION DIVERSE DEMULTIPLEXING
    68.
    发明申请
    POLARIZATION DIVERSE DEMULTIPLEXING 有权
    极化多重分解

    公开(公告)号：US20140064656A1

    公开(公告)日：2014-03-06

    申请号：US13611229

    申请日：2012-09-12

    申请人： Solomon Assefa ,  Douglas M. Gill ,  William M. Green

    发明人： Solomon Assefa ,  Douglas M. Gill ,  William M. Green

    IPC分类号： G02B6/00

    CPC分类号： G02B6/12023 ,  G02B6/2793 ,  G02B6/293

    摘要： A method for demultiplexing an optical signal includes receiving a multi polarization optical signal, separating the multi polarization optical signal into a first polarization optical signal and a second polarization optical signal, rotating a polarization of the first polarization optical signal to match a polarization of the second polarization optical signal, routing the first polarization optical signal and the second polarization optical signal to a common demultiplexing device, outputting a channel of the first polarization optical signal and the second polarization optical signal to a common photodetector.

    摘要翻译： 一种用于解复用光信号的方法包括：接收多偏振光信号，将多偏振光信号分离为第一偏振光信号和第二偏振光信号，旋转第一偏振光信号的偏振以匹配第二偏振光信号的偏振 偏振光信号，将第一偏振光信号和第二偏振光信号路由到公共解复用器件，将第一偏振光信号和第二偏振光信号的通道输出到公共光电检测器。

    PHOTONIC MODULATOR WITH A SEMICONDUCTOR CONTACT
    69.
    发明申请
    PHOTONIC MODULATOR WITH A SEMICONDUCTOR CONTACT 有权
    具有半导体接触的光电调制器

    公开(公告)号：US20140030835A1

    公开(公告)日：2014-01-30

    申请号：US13586187

    申请日：2012-08-15

    申请人： Solomon Assefa ,  William M. J. Green ,  Marwan H. Khater ,  Yurii A. Vlasov

    发明人： Solomon Assefa ,  William M. J. Green ,  Marwan H. Khater ,  Yurii A. Vlasov

    IPC分类号： H01L33/02

    CPC分类号： H01L27/1203

    摘要： A semiconductor structure includes a photonic modulator and a field effect transistor on a same substrate. The photonic modulator includes a modulator semiconductor structure and a semiconductor contact structure employing a same semiconductor material as a gate electrode of a field effect transistor. The modulator semiconductor structure includes a lateral p-n junction, and the semiconductor contact structure includes another lateral p-n junction. To form this semiconductor structure, the modulator semiconductor structure in the shape of a waveguide and an active region of a field effect transistor region can be patterned in a semiconductor substrate. A gate dielectric layer is formed on the modulator semiconductor structure and the active region, and is subsequently removed from the modulator semiconductor structure. A semiconductor material layer is deposited, patterned, and doped with patterns to form a gate electrode for the field effect transistor and the semiconductor contact structure for the waveguide.

    摘要翻译： 半导体结构包括在相同衬底上的光子调制器和场效应晶体管。 光调制器包括调制器半导体结构和使用与场效应晶体管的栅电极相同的半导体材料的半导体接触结构。 调制器半导体结构包括横向p-n结，并且半导体接触结构包括另一个侧向p-n结。 为了形成该半导体结构，可以在半导体衬底中构造波导形状的调制器半导体结构和场效应晶体管区的有源区。 栅极电介质层形成在调制器半导体结构和有源区上，随后从调制器半导体结构中去除。 沉积，图案化和掺杂半导体材料层以形成场效应晶体管的栅电极和用于波导的半导体接触结构。

    Germanium photodetector
    70.
    发明授权
    Germanium photodetector 有权
    锗光电探测器

    公开(公告)号：US08614116B2

    公开(公告)日：2013-12-24

    申请号：US13556597

    申请日：2012-07-24

    申请人： Solomon Assefa ,  Jeehwan Kim ,  Jin-Hong Park ,  Yurii A. Vlasov

    发明人： Solomon Assefa ,  Jeehwan Kim ,  Jin-Hong Park ,  Yurii A. Vlasov

    IPC分类号： H01L21/00

    CPC分类号： H01L31/1808 ,  H01L31/1085 ,  Y02E10/50

    摘要： A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.

    摘要翻译： 一种形成光检测器件的方法包括：在基片上形成绝缘体层，在绝缘体层和一部分基底上形成锗（Ge）层，在Ge层上形成第二绝缘层，构图Ge层，形成 在所述第二绝缘体层上的封盖绝缘体层和所述第一绝缘体层的一部分，加热所述器件以使所述Ge层结晶，得到单晶Ge层，在所述单晶Ge层中注入n型离子，将所述器件加热至 在单晶Ge层中激活n型离子，以及形成电连接到单晶n型Ge层的电极。