PHOTONIC SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

    公开(公告)号:US20210088723A1

    公开(公告)日:2021-03-25

    申请号:US16930558

    申请日:2020-07-16

    Abstract: A device includes a first package connected to an interconnect substrate, wherein the interconnect substrate includes conductive routing; and a second package connected to the interconnect substrate, wherein the second package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler and to a photodetector; a via extending through the substrate; an interconnect structure over the photonic layer, wherein the interconnect structure is connected to the photodetector and to the via; and an electronic die bonded to the interconnect structure, wherein the electronic die is connected to the interconnect structure.

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