公开(公告)号：US20160225662A1

公开(公告)日：2016-08-04

申请号：US14612235

申请日：2015-02-02

Applicant: United Microelectronics Corp.

Inventor： Chia-Lin Lu ,  Chun-Lung Chen ,  Feng-Yi Chang ,  Ching-Wen Hung ,  Jia-Rong Wu ,  Yi-Hui Lee ,  Yi-Kuan Wu ,  Ying-Cheng Liu ,  Chih-Sen Huang ,  Yi-Wei Chen

IPC: H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/76816 ,  H01L21/76879

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon and an interlayer dielectric (ILD) layer around the gate structure; forming a dielectric layer on the ILD layer and the gate structure; forming an opening in the dielectric layer and the ILD layer; forming an organic dielectric layer (ODL) on the dielectric layer and in the opening; removing part of the ODL; removing part of the dielectric layer for extending the opening; removing the remaining ODL; and forming a contact plug in the opening.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供其上具有栅极结构的衬底和围绕栅极结构的层间电介质（ILD）层; 在ILD层和栅极结构上形成介电层; 在介电层和ILD层中形成开口; 在介质层和开口中形成有机介电层（ODL）; 去除部分ODL; 去除用于延伸开口的电介质层的一部分; 去除剩余的ODL; 并在开口中形成接触塞。