Abstract:
A real-time method employing a portable peptide-containing potentiometric biosensor, can directly detect and/or quantify bacterial spores. Two peptides for specific recognition of B. subtilis and B. anthracis Sterne may be immobilized by a polysiloxane monolayer immobilization (PMI) technique. The sensors translate the biological recognition event into a potential change by detecting, for example, B. subtilis spores in a concentration range of 0.08-7.3×104 CFU/ml. The sensing method exhibited highly selective recognition properties towards Bacillus subtilis spores over other kinds of spores. The selectivity coefficients of the sensors for other kinds of spores are in the range of 0-1.0×10−5. The biosensor method not only has the specificity to distinguish Bacillus subtilis spores in a mixture of B. subtilis and B. thuringiensis (thur.) Kurstaki spores, but also can discriminate between live and dead B. subtilis spores. Furthermore, the sensing method can distinguish a Bacillus subtilis 1A700 from other B. subtilis strain. Assay time may be as low as about 5 minutes for a single test. Rapid identification of B. anthracis Sterne and B. anthracis ΔAmes was also provided.
Abstract:
A double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin, a first gate and a second gate. The first gate is formed on top of the fin. The second gate surrounds the fin and the first gate. In another implementation, a triple gate MOSFET includes a fin, a first gate, a second gate, and a third gate. The first gate is formed on top of the fin. The second gate is formed adjacent the fin. The third gate is formed adjacent the fin and opposite the second gate.
Abstract:
A double-gate semiconductor device includes a substrate, an insulating layer, a fin and two gates. The insulating layer is formed on the substrate and the fin is formed on the insulating layer. A first gate is formed on the insulating layer and is adjacent a first sidewall of the fin. The second gate is formed on the insulating layer and is adjacent a second sidewall of the fin opposite the first sidewall. The first and second gates both include a conductive material and are electrically separated by the fin.
Abstract:
A method and system for dynamic adjustment of downlink/uplink resource allocation ratio in a long-term evolution (LTE) time division duplex (TDD) system is disclosed. The method includes replacing at least one uplink subframe in a subframe pattern with at least one of a mute subframe and a mute uplink pilot timeslot (UpPTS), within a geographical guard area that isolates at least two areas having different TDD allocation patterns. The method further includes scheduling an uplink transmission from at least one mobile terminal such that the at least one of the mute subframe and the mute UpPTS are unused. A simple solution or a TDD configuration index substitution solution, or any combination thereof, may be used to control the uplink transmission involving a mute subframe or a mute UpPTS.
Abstract:
The present invention, known as The Collaboration Portal (COPO), relates generally to the field of automated entity, data processing, system control, and data communications, and more specifically to an integrated method, system, and apparatus for providing computer-accessible benefits for communities of users. It provides a framework for provisioning computer-accessible benefits for communities of users, and can efficiently and robustly distribute the processing in behalf of those users over a decentralized network of computers. The field of the invention generally encompasses enabling appropriate and desired communication among communities of users and organizations, and providing information, goods, services, a works, opportunities, and connections among users and organizations.
Abstract:
A configuration method and an indication method of MBSFN frames and an identifying method used by a terminal applied in a long term evolution system are disclosed in the present invention, which include: an access network sends configuration parameters of the MBSFN frame to a mobile terminal determining whether the wireless frame received is an MBSFN frame according to the configuration parameters, the configuration parameters including a repetition period of the MBSFN frames distributed in system-set time. With the present invention, it could consume less bytes in system message to complete the configuration of the MBSFN sub-frames and could save system resources.
Abstract:
A lever stapler includes a plastic cover, a pressure plate, a stapling bracket, a staple cartridge, a staple slot, a staple driver, a staple driving shaft, a staple driving spring, a staple plate, a support stand, a base, and a rotating shaft. The pressure plate includes a lever pressing plate disposed thereon, and a rear end of the lever pressing plate is hinged onto the support stand through a fulcrum shaft, and the lever pressing plate further includes a lever shaft contacted with the top of the pressure plate. The lever stapler of the invention enhances the stapling force to achieve the effects of reducing the required force for the stapling and stapling a thick document easily.
Abstract:
A logging system includes an event receiver and a storage manager. The receiver receives log data, processes it, and outputs a column-based data “chunk.” The manager receives and stores chunks. The receiver includes buffers that store events and a metadata structure that stores metadata about the contents of the buffers. Each buffer is associated with a particular event field and includes values from that field from one or more events. The metadata includes, for each “field of interest,” a minimum value and a maximum value that reflect the range of values of that field over all of the events in the buffers. A chunk is generated for each buffer and includes the metadata structure and a compressed version of the buffer contents. The metadata structure acts as a search index when querying event data. The logging system can be used in conjunction with a security information/event management (SIEM) system.
Abstract:
A method for forming one or more FinFET devices includes forming a source region and a drain region in an oxide layer, where the oxide layer is disposed on a substrate, and etching the oxide layer between the source region and the drain region to form a group of oxide walls and channels for a first device. The method further includes depositing a connector material over the oxide walls and channels for the first device, forming a gate mask for the first device, removing the connector material from the channels, depositing channel material in the channels for the first device, forming a gate dielectric for first device over the channels, depositing a gate material over the gate dielectric for the first device, and patterning and etching the gate material to form at least one gate electrode for the first device.