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公开(公告)号:US4446120A
公开(公告)日:1984-05-01
申请号:US344084
申请日:1982-01-29
IPC分类号: C01B33/033 , C01B33/02 , C30B29/02
CPC分类号: C01B33/033
摘要: A process for preparing high purity silicon metal from Na.sub.2 SiF.sub.6 (sodium fluosilicate). The sodium fluosilicate is heated to decomposition temperature to form NaF, which retains most of the impurities, and gaseous SiF.sub.4. The SiF.sub.4 is then reduced by the bomb reduction method using a reductant having a low packing density.
摘要翻译: 从Na2SiF6(氟硅酸钠)制备高纯度硅金属的方法。 将氟硅酸钠加热至分解温度以形成NaF,其保留大部分杂质和气态SiF 4。 然后通过使用具有低填充密度的还原剂的炸弹还原法减少SiF 4。
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公开(公告)号:US4139438A
公开(公告)日:1979-02-13
申请号:US891992
申请日:1978-03-31
IPC分类号: C01B33/02 , C01B33/027 , C01B33/033 , B01K1/00
CPC分类号: C01B33/033
摘要: A process for producing high purity silicon characterized by the employment of an electric arc heater into which a silicon halide is injected together with a metal reductant such as an alkali metal or an alkaline-earth metal which are reacted together by projecting them tangentially into a reaction chamber to cause the formation of liquid silicon and a gaseous metal halide salt which are separated in a suitable manner such as centrifugally or by condensation.
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公开(公告)号:US3051557A
公开(公告)日:1962-08-28
申请号:US79850259
申请日:1959-03-10
IPC分类号: C01B33/033
CPC分类号: C01B33/033
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公开(公告)号:US3041145A
公开(公告)日:1962-06-26
申请号:US67173357
申请日:1957-07-15
申请人: ARIES ROBERT S
发明人: ARIES ROBERT S
IPC分类号: C01B33/033
CPC分类号: C01B33/033
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