公开(公告)号：US20200321490A1

公开(公告)日：2020-10-08

申请号：US16817162

申请日：2020-03-12

Applicant: HONGIK UNIVERSITY INDUSTRY-ACADEMIA COOPERATION FOUNDATION

Inventor： Hee-Sun YANG ,  Chang-Yeol HAN

IPC: H01L33/06 ,  H01L33/30 ,  H01L33/00 ,  H01L25/075

Abstract: The metal oxide nanoparticle includes a Zn-containing metal Me1 oxide nanoparticle of Zn1-xMe1xO(0≤x≤0.5) composition, and a metal Me2 ion surface treatment layer formed on a surface of the nanoparticle. Here, the metal Me1 is any one selected from Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba and a combination thereof, and the metal Me2 is any one selected from Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba and a combination thereof.

公开(公告)号：US20200028025A1

公开(公告)日：2020-01-23

申请号：US16132244

申请日：2018-09-14

Applicant: HONGIK UNIVERSITY INDUSTRY-ACADEMIA COOPERATION FOUNDATION

Inventor： Hee-Sun YANG

IPC: H01L33/06 ,  H01L33/26 ,  H01L33/00

Abstract: Disclosed is an optoelectronic device including a lanthanum-based active layer and a method for fabricating the same. The optoelectronic device includes an active layer of multiple quantum well (MQW) structure including each well between walls, wherein the wall is a dielectric layer selected from alkali metal halide, alkali earth metal halide, alkali metal chalcogenide and alkali earth metal chalcogenide, and the well is a layer including semiconductor selected from lanthanum-based metal halide, lanthanum-based metal chalcogenide, transition metal (including post transition metal) halide and transition metal chalcogenide. The optoelectronic device including the active layer can be used in applications of LEDs, displays, optical sensors and solar cells. When the active layer is used as a photoconversion layer, displays can be implemented by upconversion or downconversion of short wavelength of UV, blue and IR light source to visible wavelength of red, green and blue.

公开(公告)号：US10403360B2

公开(公告)日：2019-09-03

申请号：US15994630

申请日：2018-05-31

Applicant: Konkuk University Industrial Cooperation Corp ,  Myongji University Industry and Academia Cooperation Foundation ,  Hongik University Industry-Academia Cooperation Foundation

Inventor： Dohyun Kim ,  Jin Song ,  Jintae Kim ,  Minsub Chung ,  Kyungju Song ,  Yeji Kim

IPC: G11C13/04 ,  G01N27/02

Abstract: A nonvolatile protein memory system with optical write/erase and electrical readout capability is provided. The nonvolatile protein memory system includes: a substrate including a microfluidic channel having a pH gradient; a photosensitive protein disposed in the microfluidic channel; and a first electrode and a second electrode disposed on the microfluidic channel and spaced apart from each other and detecting a position change of the photosensitive protein in the microfluidic channel.

公开(公告)号：US20180350436A1

公开(公告)日：2018-12-06

申请号：US15994630

申请日：2018-05-31

Applicant: Konkuk University Industrial Cooperation Corp ,  Myongji University Industry and Academia Cooperation Foundation ,  Hongik University Industry-Academia Cooperation Foundation

Inventor： Dohyun KIM ,  Jin SONG ,  Jintae KIM ,  Minsub CHUNG ,  Kyungju SONG ,  Yeji KIM

IPC: G11C13/04 ,  G01N27/02

CPC classification number: G11C13/048 ,  G01N27/028 ,  G11C13/047

Abstract: A nonvolatile protein memory system with optical write/erase and electrical readout capability is provided. The nonvolatile protein memory system includes: a substrate including a microfluidic channel having a pH gradient; a photosensitive protein disposed in the microfluidic channel; and a first electrode and a second electrode disposed on the microfluidic channel and spaced apart from each other and detecting a position change of the photosensitive protein in the microfluidic channel.

公开(公告)号：US20150087333A1

公开(公告)日：2015-03-26

申请号：US14389475

申请日：2013-03-29

Applicant: Hongik University Industry-Academia Cooperation Foundation

Inventor： Ha Yoon Song

IPC: H04W4/02

CPC classification number: G01S5/021 ,  G01S5/0242

Abstract: As a method for estimating a true value of a location having an error when acquired at a position information acquiring device, the estimating method is disclosed wherein the true value is estimated by interpolating among the location values acquired prior to and after the location having the error, and when a second location value acquired consecutively from the location having the error also has an error, the second location value is calibrated in advance.

Abstract translation: 作为用于在位置信息获取装置获取时估计具有错误的位置的真实值的方法，公开了通过在具有错误的位置之前和之后获取的位置值之间进行内插来估计真实值的估计方法 ，并且当从具有错误的位置连续获取的第二位置值也具有错误时，预先校准第二位置值。