公开(公告)号：US06693039B2

公开(公告)日：2004-02-17

申请号：US09797206

申请日：2001-02-27

申请人： Pietro Erratico ,  Enrico Sacchi ,  Flavio Villa ,  Gabriele Barlocchi ,  Pietro Corona

发明人： Pietro Erratico ,  Enrico Sacchi ,  Flavio Villa ,  Gabriele Barlocchi ,  Pietro Corona

IPC分类号： H01L21302

CPC分类号： B81C1/00404

摘要： The process comprises the steps of forming, on top of a semiconductor material wafer, a holed mask having a lattice structure and comprising a plurality of openings each having a substantially square shape and a side with an inclination of 45° with respect to the flat of the wafer; carrying out an anisotropic etch in TMAH of the wafer, using said holed mask, thus forming a cavity, the cross section of which has the shape of an upside-down isosceles trapezium; and carrying out a chemical vapor deposition using TEOS, thus forming a TEOS layer which completely closes the openings of the holed mask and defines a diaphragm overlying the cavity and on which a suspended integrated structure can subsequently be manufactured.

公开(公告)号：US06506663B1

公开(公告)日：2003-01-14

申请号：US09457623

申请日：1999-12-08

申请人： Gabriele Barlocchi ,  Flavio Villa

发明人： Gabriele Barlocchi ,  Flavio Villa

IPC分类号： H01L2176

CPC分类号： H01L21/76262

摘要： A method for providing an SOI wafer that includes, on a wafer of monocrystalline semiconductor material, forming a hard mask of an oxidation-resistant material, defining first protective regions covering first portions of the wafer; excavating the second portions of the wafer, forming initial trenches extending between the first portions of the wafer; thermally oxidating the wafer, forming a sacrificial oxide layer extending at the lateral and base walls of the initial trenches, below the first protective regions; and wet etching the wafer, to completely remove the sacrificial oxide layer. Thereby, intermediate trenches are formed, the lateral walls of which are recessed with respect to the first protective regions. Subsequently, a second oxide layer is formed inside the intermediate trenches; a second silicon nitride layer is deposited; final trenches are produced; a buried oxide region is formed, and finally an epitaxial layer is grown.

摘要翻译： 一种用于提供SOI晶片的方法，所述SOI晶片包括在单晶半导体材料的晶片上，形成覆盖所述晶片的第一部分的第一保护区域的抗氧化材料的硬掩模; 挖掘晶片的第二部分，形成在晶片的第一部分之间延伸的初始沟槽; 热氧化所述晶片，在所述第一保护区下方形成在所述初始沟槽的侧壁和底壁处延伸的牺牲氧化物层; 并湿式蚀刻晶片，以完全去除牺牲氧化物层。 由此，形成中间沟槽，其侧壁相对于第一保护区域凹陷。 随后，在中间沟槽内部形成第二氧化物层; 沉积第二氮化硅层; 制作最后的壕沟; 形成掩埋氧化物区域，最后生长外延层。