公开(公告)号：US20140264580A1

公开(公告)日：2014-09-18

申请号：US13828894

申请日：2013-03-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Andreas Meiser ,  Till Schloesser

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/7816 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/4983 ,  H01L29/66681 ,  H01L29/66689 ,  H01L29/7818 ,  H01L29/7824 ,  H01L29/7835

Abstract: A semiconductor device comprises a transistor. The transistor includes a source region, a drain region, a body region, a drift zone, and a gate electrode being adjacent to the body region. The body region, the drift zone, the source region and the drain region are disposed in a first semiconductor layer having a first main surface. The body region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The transistor further comprises a drift control region arranged adjacent to the drift zone, the drift control region being disposed over the first main surface.

Abstract translation: 半导体器件包括晶体管。 晶体管包括源区域，漏极区域，体区域，漂移区域和与身体区域相邻的栅电极。 体区，漂移区，源区和漏区设置在具有第一主表面的第一半导体层中。 主体区域和漂移区域沿着源极区域和漏极区域之间的第一方向设置，第一方向平行于第一主表面。 所述晶体管还包括与所述漂移区相邻布置的漂移控制区域，所述漂移控制区域设置在所述第一主表面上。