公开(公告)号：US06495903B2

公开(公告)日：2002-12-17

申请号：US09737439

申请日：2000-12-13

申请人： Shuming Xu ,  Hanhua Feng ,  Pang Dow Foo ,  Bai Xu ,  Uppili Sridhar

发明人： Shuming Xu ,  Hanhua Feng ,  Pang Dow Foo ,  Bai Xu ,  Uppili Sridhar

IPC分类号： H01L2900

CPC分类号： H01L28/10 ,  H01F17/0006 ,  H01L27/08

摘要： An inductor has a spiral aluminum track deposited on an oxide layer over a silicon substrate. The substrate is etched away to form a trench, which extends around beneath the track and provides an air gap having a low dielectric constant. The oxide layer has an inner region within the track, an outer region outside the track and a bridging region extending between the other regions. The bridging region is comprised of intact bridges and gaps therebetween, which are open to the trench and through which an etchant has access to the silicon substrate to form the trench by etching.

摘要翻译： 电感器具有沉积在硅衬底上的氧化物层上的螺旋状铝轨道。 将衬底蚀刻掉以形成沟槽，该沟槽在轨道下方延伸并提供具有低介电常数的气隙。 氧化物层具有轨道内的内部区域，轨道外部的外部区域和在其它区域之间延伸的桥接区域。 桥接区域由完整的桥和它们之间的间隙组成，它们对沟槽开放，蚀刻剂可以通过该沟槽进入硅衬底以通过蚀刻形成沟槽。

公开(公告)号：US06461902B1

公开(公告)日：2002-10-08

申请号：US09618263

申请日：2000-07-18

申请人： Shuming Xu ,  Hanhua Feng ,  Pang-Dow Foo

发明人： Shuming Xu ,  Hanhua Feng ,  Pang-Dow Foo

IPC分类号： H01L2100

CPC分类号： H01L29/66659 ,  H01L29/0653 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/66636 ,  H01L29/7835 ,  Y10S438/923

摘要： In the prior art LDMOSFET devices capable of handling high power have been made by locating the source contact on the bottom surface of the device, allowing for good heat sinking, with connection to the source region being made through a sinker. However, this structure has poor high frequency characteristics. Also in the prior art, good high frequency performance has been achieved by introducing a dielectric layer immediately below the source/drain regions (SOI) but this structure has poor handling capabilities. The present invention achieves both good high frequency behavior as well as good power capability in the same device. Instead of inserting a dielectric layer over the entire cross-section of the device, the dielectric layer is limited to being below the heavily doped section of the drain with a small amount of overlap into the lightly doped section. The structure is described in detail together with a process for manufacturing it.

摘要翻译： 在现有技术中，能够处理高功率的LDMOSFET器件已经通过将源极接触定位在器件的底表面上，通过连接到源极区域通过沉降片而实现良好的散热。 然而，该结构具有差的高频特性。 同样在现有技术中，通过在源极/漏极区域（SOI）之下引入介电层已经实现了良好的高频性能，但是该结构具有差的处理能力。 本发明在同一设备中实现了良好的高频行为以及良好的功率能力。 代替在器件的整个横截面上插入电介质层，电介质层被限制在漏极的重掺杂部分之下，在轻掺杂部分中具有少量的重叠。 详细描述该结构及其制造方法。