公开(公告)号：US06967150B2

公开(公告)日：2005-11-22

申请号：US10938154

申请日：2004-09-10

申请人： Cheol-Ju Yun ,  Tae-Young Chung

发明人： Cheol-Ju Yun ,  Tae-Young Chung

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8242

CPC分类号： H01L27/10885 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76897 ,  H01L27/10855

摘要： According to some embodiments of the invention, a method of forming a self-aligned contact of a semiconductor device includes forming a plurality of conductive lines that are spaced apart from each other and pass over a plurality of conductive regions. An insulating layer is formed over and between the conductive lines. A plurality of contact holes are then formed to selectively expose the conductive regions by selectively removing the insulating layer without exposing the conductive lines. The contact holes are extended using an isotropic etching until the conductive lines begin to be exposed. Thereafter, contacts are formed in the contact holes such that the contacts are coupled to the conductive regions.

摘要翻译： 根据本发明的一些实施例，形成半导体器件的自对准接触的方法包括形成彼此间隔开并跨越多个导电区域的多条导线。 在导线之间和之间形成绝缘层。 然后形成多个接触孔，以通过选择性地去除绝缘层而不暴露导电线来选择性地暴露导电区域。 使用各向同性蚀刻使接触孔延伸，直到导线开始暴露。 此后，在接触孔中形成触点，使得触点耦合到导电区域。