公开(公告)号：US20130145234A1

公开(公告)日：2013-06-06

申请号：US13690544

申请日：2012-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangyong Yoon ,  Kitae Park ,  Jinman Han

IPC: G06F11/10

CPC classification number: G06F11/1068 ,  G06F11/1008 ,  G06F11/1072 ,  G11C29/52

Abstract: Methods of operating memory systems and nonvolatile memory devices include performing error checking and correction (ECC) operations on M pages of data read from a first “source” portion of M-bit nonvolatile memory cells within the nonvolatile memory device to thereby generate M pages of ECC-processed data, where M is a positive integer greater than two (2). A second “target” portion of M-bit nonvolatile memory cells within the nonvolatile memory device is then programmed with the M pages of ECC-processed data using an address-scrambled reprogramming technique, for example.

Abstract translation: 操作存储器系统和非易失性存储器件的方法包括在从非易失性存储器件中的M位非易失性存储器单元的第一“源”部分读取的M页数据上执行错误校验和校正（ECC）操作，从而产生M页的 ECC处理的数据，其中M是大于2（2）的正整数。 例如，非易失性存储器件中的M位非易失性存储单元的第二“目标”部分然后使用地址加扰的重新编程技术用ECC处理数据的M页被编程。