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    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    71.
    发明申请
    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 审中-公开

    公开(公告)号：US20180269258A1

    公开(公告)日：2018-09-20

    申请号：US15986956

    申请日：2018-05-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Sung Young YUN ,  Yong Wan JIN

    IPC: H01L27/30 ,  H01L51/42

    CPC classification number: H01L27/307 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0062 ,  H01L51/4253 ,  H01L51/441 ,  Y02E10/549

    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    72.
    发明申请
    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20170287971A1

    公开(公告)日：2017-10-05

    申请号：US15283698

    申请日：2016-10-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Kwang Hee LEE ,  Kyu Sik Kim ,  Sung Young YUN ,  Dong-Seok LEEM ,  Yong Wan JIN

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14636

    Abstract: An image sensor includes a semiconductor substrate and a photoelectric conversion device on the semiconductor substrate and including a plurality of pixel electrodes, a light absorption layer, and a common electrode. The plurality of pixel electrodes may include a first pixel electrode and a second pixel electrode. The photoelectric conversion device may include a first photoelectric conversion region defined in an overlapping region with the first pixel electrode, the light absorption layer, and the common electrode, and a second photoelectric conversion region defined in an overlapping region with the second pixel electrode, the light absorption layer, and the common electrode. Sensitivity of the first photoelectric conversion region may be higher than sensitivity of the second photoelectric conversion region. An electronic device may include the image sensor.

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