Abstract:
A device including a near field transducer (NFT); a write pole; at least one dielectric material positioned between the NFT and the write pole; and an adhesion layer positioned between the NFT and the at least one dielectric material.
Abstract:
Waveguides that include a top cladding layer made of a material having an index of refraction n4; a core bilayer structure, the core bilayer structure including a lower index core layer having an index of refraction n3; and a higher index core layer having an index of refraction n1, wherein the higher index core layer includes TiO2 and one or more than one of Nb2O5, CeO2, Ta2O5, ZrO2, HfO2, Y2O3, Sc2O3, MgO, Al2O3 and SiO2, wherein the lower index core layer is adjacent the higher index core layer; a bottom cladding layer made of a material having an index of refraction n2, wherein the waveguide is configured with the higher index core layer of the core bilayer structure adjacent the top cladding layer and the lower index core layer of the core bilayer structure adjacent the bottom cladding layer, and wherein n4 is less than n3 and n1, and n2 is less than n3 and n1.
Abstract translation:包括由具有折射率n4的材料制成的顶部覆层的波导; 核心双层结构,核心双层结构包括具有折射率n3的较低折射率核心层; 以及具有折射率n1的高折射率芯层,其中所述较高折射率芯层包括TiO 2和Nb 2 O 5,CeO 2,Ta 2 O 5,ZrO 2,HfO 2,Y 2 O 3,Sc 2 O 3,MgO,Al 2 O 3和SiO 2中的一种或多种,其中 较低指数核心层与较高指数核心层相邻; 由具有折射率n2的材料制成的底部包层,其中所述波导配置有与所述顶部包覆层相邻的所述芯层双层结构的较高折射率芯层和所述芯层双层结构的较低折射率核心层邻近所述底部 包层,其中n4小于n3和n1,n2小于n3和n1。
Abstract:
A method including depositing a plasmonic material at a temperature of at least 150° C.; and forming at least a peg of a near field transducer (NFT) from the deposited plasmonic material.
Abstract:
A device that includes a near field transducer (NFT), the NFT having a disc and a peg, and the peg having an air bearing surface thereof; and at least one adhesion layer positioned on at least the air bearing surface of the peg, the adhesion layer including one or more of platinum (Pt), iridium (Ir), ruthenium (Ru), rhodium (Rh), palladium (Pd), yttrium (Y), chromium (Cr), nickel (Ni), and scandium (Sc).
Abstract:
A device including a magnetoresistive sensor; a top shield; and a bottom shield, wherein the magnetoresistive sensor is positioned between the top shield and the bottom shield, and wherein at least one of the bottom shield and the top shield include NiFeX, wherein X is chosen from Nb, Mo, Ta, or W.
Abstract:
Waveguides that include a top cladding layer made of a material having an index of refraction n4; a core bilayer structure, the core bilayer structure including a lower index core layer having an index of refraction n3; and a higher index core layer having an index of refraction n1, wherein the higher index core layer includes TiO2 and one or more than one of Nb2O5, CeO2, Ta2O5, ZrO2, HfO2, Y2O3, Sc2O3, MgO, Al2O3 and SiO2, wherein the lower index core layer is adjacent the higher index core layer; a bottom cladding layer made of a material having an index of refraction n2, wherein the waveguide is configured with the higher index core layer of the core bilayer structure adjacent the top cladding layer and the lower index core layer of the core bilayer structure adjacent the bottom cladding layer, and wherein n4 is less than n3 and n1, and n2 is less than n3 and n1.
Abstract translation:包括由具有折射率n4的材料制成的顶部覆层的波导; 核心双层结构,核心双层结构包括具有折射率n3的较低折射率核心层; 以及具有折射率n1的高折射率芯层,其中所述较高折射率芯层包括TiO 2和Nb 2 O 5,CeO 2,Ta 2 O 5,ZrO 2,HfO 2,Y 2 O 3,Sc 2 O 3,MgO,Al 2 O 3和SiO 2中的一种或多种,其中 较低指数核心层与较高指数核心层相邻; 由具有折射率n2的材料制成的底部包层,其中,所述波导配置有与所述顶部包覆层相邻的所述芯层双层结构的较高折射率的核心层和与所述核心双层结构相邻的底部的下部折射率核心层 包层,其中n4小于n3和n1,n2小于n3和n1。
Abstract:
An apparatus disclosed herein comprises a reader structure having a sensor stack and a bottom shield having a first end and a second end on opposite sides of the bottom shield in a cross-track direction, wherein the first end is formed by intersection of arcs. In one implementation, the apparatus disclosed herein the sensor has a bottom shield having a bullet shape with a first end along a cross-track direction being rectangular and a second end along the cross-track direction being formed by an intersection of arcs.
Abstract:
Devices that include a near field transducer (NFT), the NFT having a disc and a peg, and the peg having an air bearing surface; and at least one adhesion layer positioned on the air bearing surface of the peg, the adhesion layer including one or more of the following: tungsten (W), molybdenum (Mo), chromium (Cr), silicon (Si), nickel (Ni), tantalum (Ta), titanium (Ti), yttrium (Y), vanadium (V), magnesium (Mg), cobalt (Co), tin (Sn), niobium (Nb), hafnium (Hf), and combinations thereof; tantalum oxide, titanium oxide, tin oxide, indium oxide, and combinations thereof; vanadium carbide (VC), tungsten carbide (WC), titanium carbide (TiC), chromium carbide (CrC), cobalt carbide (CoC), nickel carbide (NiC), yttrium carbide (YC), molybdenum carbide (MoC), and combinations thereof and titanium nitride (TiN), zirconium nitride (ZrN), hafnium nitride (HfN), and combinations thereof.
Abstract:
Devices having an air bearing surface, the device including a magnetic write pole positioned adjacent the air bearing surface; a near field transducer including a peg region and an adjacent disk region, wherein the peg region is adjacent the air bearing surface; a heat sink; and an optical waveguide including a top cladding layer and a core layer, wherein the heat sink is positioned between the magnetic write pole and the near field transducer and the near field transducer is positioned between the optical waveguide and the heat sink, and wherein at least a portion of at least one of the heat sink, the optical waveguide, or the write pole includes beryllium oxide (BeO).
Abstract:
Near field transducers (NFTs) and devices that include a peg having an air bearing region and an opposing back region, the back region including a sacrificial structure, a disc having a first surface in contact with the peg, and a barrier structure, the barrier structure positioned between the opposing back region of the peg and the first surface of the disc.