公开(公告)号：US20180317309A1

公开(公告)日：2018-11-01

申请号：US15949543

申请日：2018-04-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis CHANG ,  Tzung-Chi FU ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG ,  Wei-Ting YI ,  Shang-Chieh CHIEN

IPC: H05G2/00

Abstract: A method and extreme ultraviolet (EUV) light source including a laser source configured to generate a first pre-pulse laser beam, a second pre-pulse laser beam, and a main pulse laser beam. In some embodiments, a droplet is irradiated within an extreme ultraviolet (EUV) vessel using the first pre-pulse laser beam to form a re-shaped droplet. In some examples, the droplet includes a tin droplet. In various embodiments, a seed plasma is then formed by irradiating the re-shaped droplet using the second pre-pulse laser beam. Thereafter, and in some cases, the seed plasma is heated by irradiating the seed plasma using the main pulse laser beam to generate EUV light.

公开(公告)号：US20140218714A1

公开(公告)日：2014-08-07

申请号：US13758114

申请日：2013-02-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Hao HSU ,  Chia-Chen CHEN ,  Jui-Ching WU ,  Shang-Chieh CHIEN ,  Chia-Jen CHEN ,  Chia-Ching HUANG

IPC: G03F1/00

CPC classification number: H01L21/0274 ,  G03F1/14 ,  G03F1/22 ,  G03F1/24 ,  G03F7/70283

Abstract: A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.

Abstract translation: 用于极紫外（euv）光刻工具的掩模版包括形成在掩模版的图像周围形成的不透明边界中的沟槽。 沟槽涂有吸收材料。 掩模版用于与光掩模掩模结合的电子光刻工具，并且掩模版掩模的定位和沟槽的存在组合以防止任何发散的辐射束到达衬底上的任何不期望的区域被图案化。 以这种方式，只有基板的曝光场暴露于euv辐射。 保持相邻区域中的模式完整性。