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公开(公告)号:US20250123555A1
公开(公告)日:2025-04-17
申请号:US18487881
申请日:2023-10-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Jia-Lin SYU , Tai-Yu CHEN , Yi-Zhen CHEN , Yen-Hsun CHEN , Shang-Chieh CHIEN , Li-Jui CHEN
IPC: G03F1/84 , G01N21/88 , G01N21/956
Abstract: A method for operating a reticle inspection system includes training an analysis model of the reticle inspection system with a machine learning process, generating a difference threshold based on the machine learning process, storing a reference image, and generating a scan image of a reticle with the reticle inspection system. The method includes generating a relative difference value by comparing the scan image to the reference image. The method includes, if the relative difference value is less than the difference threshold, determining that the reticle is not defective. The method includes, if the relative difference value is greater than the difference threshold, determining that the reticle is defective.
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公开(公告)号:US20240365461A1
公开(公告)日:2024-10-31
申请号:US18769912
申请日:2024-07-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Kuang SUN , Ming-Hsun TSAI , Wei-Shin CHENG , Cheng-Hao LAI , Hsin-Feng CHEN , Chiao-Hua CHENG , Cheng-Hsuan WU , Yu-Fa LO , Jou-Hsuan LU , Shang-Chieh CHIEN , Li-Jui CHEN , Heng-Hsin LIU
CPC classification number: H05G2/006 , G03F7/70033 , G05D23/19
Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.
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公开(公告)号:US20230386884A1
公开(公告)日:2023-11-30
申请号:US18447519
申请日:2023-08-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Shuang-Shiuan DENG , Fan-Chi LIN , Chueh-Chi KUO , Li-Jui CHEN , Heng-Hsin LIU
IPC: H01L21/683 , H01L21/687
CPC classification number: H01L21/6833 , H01L21/68721
Abstract: A method includes: positioning a wafer on an electrostatic chuck of an apparatus; and securing the wafer to the electrostatic chuck by: securing a first wafer region of the wafer to a first chuck region of the electrostatic chuck by applying a first voltage at a first time. The method further includes securing a second wafer region of the wafer to a second chuck region of the electrostatic chuck by applying a second voltage at a second time different from the first time; and processing the wafer by the apparatus while the wafer is secured to the electrostatic chuck.
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公开(公告)号:US20230060598A1
公开(公告)日:2023-03-02
申请号:US17463328
申请日:2021-08-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yi-Zhen CHEN , Yen-Hsun CHEN , Jhan-Hong YEH , Tzung-Chi FU , Han-Lung CHANG , Li-Jui CHEN
IPC: G03F7/20
Abstract: An EUV photolithography system utilizes a baseplate of an EUV pod to unload an EUV reticle from a chuck within an EUV scanner. The baseplate includes a top surface and support pins extending from the top surface. The when the reticle is unloaded onto the baseplate, the support pins hold the reticle at relatively large distance from the top surface of the baseplate. The support pins have a relatively low resistance. The large distance and low resistance help ensure that particles do not travel from the baseplate to the reticle during unloading.
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公开(公告)号:US20220350257A1
公开(公告)日:2022-11-03
申请号:US17867318
申请日:2022-07-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Tai-Yu CHEN , Sagar Deepak KHIVSARA , Kuo-An LIU , Chieh HSIEH , Shang-Chieh CHIEN , Gwan-Sin CHANG , Kai Tak LAM , Li-Jui CHEN , Heng-Hsin LIU , Chung-Wei WU , Zhiqiang WU
IPC: G03F7/20
Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.
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公开(公告)号:US20220338335A1
公开(公告)日:2022-10-20
申请号:US17483298
申请日:2021-09-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Kuang SUN , Ming-Hsun TSAI , Wei-Shin CHENG , Cheng-Hao LAI , Hsin-Feng CHEN , Chiao-Hua CHENG , Cheng-Hsuan WU , Yu-Fa LO , Jou-Hsuan LU , Shang-Chieh CHIEN , Li-Jui CHEN , Heng-Hsin LIU
Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.
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公开(公告)号:US20220310431A1
公开(公告)日:2022-09-29
申请号:US17477450
申请日:2021-09-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Shang-Shiuan DENG , Fan-Chi LIN , Chueh-Chi KUO , Li-Jui CHEN , Heng-Hsin LIU
IPC: H01L21/683 , H01L21/687
Abstract: A method includes: positioning a wafer on an electrostatic chuck of an apparatus; and securing the wafer to the electrostatic chuck by: securing a first wafer region of the wafer to a first chuck region of the electrostatic chuck by applying a first voltage at a first time. The method further includes securing a second wafer region of the wafer to a second chuck region of the electrostatic chuck by applying a second voltage at a second time different from the first time; and processing the wafer by the apparatus while the wafer is secured to the electrostatic chuck.
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公开(公告)号:US20210298161A1
公开(公告)日:2021-09-23
申请号:US17338441
申请日:2021-06-03
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Shih-Yu TU , Han-Lung CHANG , Hsiao-Lun CHANG , Li-Jui CHEN , Po-Chung CHENG
IPC: H05G2/00
Abstract: A method includes ejecting a metal droplet from a reservoir of a first droplet generator assembled to a vessel; emitting an excitation laser from a laser source to the metal droplet to generate extreme ultraviolet (EUV) radiation; turning off the first droplet generator; cooling down the first droplet generator to a temperature not lower than about 150° C.; dismantling the first droplet generator from the vessel at the temperature not lower than about 150° C.; and assembling a second droplet generator to the vessel.
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公开(公告)号:US20210208508A1
公开(公告)日:2021-07-08
申请号:US17208791
申请日:2021-03-22
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Yu-Chih CHEN , Po-Chung CHENG , Li-Jui CHEN , Shang-Chieh CHIEN , Sheng-Kang YU , Wei-Chun YEN
Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.
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公开(公告)号:US20210018845A1
公开(公告)日:2021-01-21
申请号:US16512811
申请日:2019-07-16
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Wei-Chun YEN , Chi YANG , Shang-Chieh CHIEN , Li-Jui CHEN , Po-Chung CHENG
Abstract: A method includes generating a plasma that emits a first EUV radiation in a vessel at a first gas exhaust rate of the vessel; directing the first EUV radiation to a first substrate using a collector in the vessel; halting the generating of the first EUV radiation; and ejecting a gas past the collector at a second gas exhaust rate of the vessel, in which the second gas exhaust rate is greater than the first gas exhaust rate after the halting.
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