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    SYSTEM, METHOD AND RETICLE FOR IMPROVED PATTERN QUALITY IN EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY AND METHOD FOR FORMING THE RETICLE
    1.
    发明申请
    SYSTEM, METHOD AND RETICLE FOR IMPROVED PATTERN QUALITY IN EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY AND METHOD FOR FORMING THE RETICLE 审中-公开
    用于改进极端超紫外线（EUV）光刻技术的改进图案质量的系统，方法和实例及其形成方法

    公开(公告)号：US20150255272A1

    公开(公告)日：2015-09-10

    申请号：US14716917

    申请日：2015-05-20

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    发明人： Chia-Hao HSU ,  Chia-Chen CHEN ,  Jui-Ching WU ,  Shang-Chieh CHIEN ,  Chia-Jen CHEN ,  Chia-Ching HUANG

    IPC分类号： H01L21/027 ,  G03F1/22 ,  G03F7/20

    CPC分类号： H01L21/0274 ,  G03F1/14 ,  G03F1/22 ,  G03F1/24 ,  G03F7/70283

    摘要： A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.

    摘要翻译： 用于极紫外（euv）光刻工具的掩模版包括形成在掩模版的图像周围形成的不透明边界中的沟槽。 沟槽涂有吸收材料。 掩模版用于与光掩模掩模结合的电子光刻工具，并且掩模版掩模的定位和沟槽的存在组合以防止任何发散的辐射束到达衬底上的任何不期望的区域被图案化。 以这种方式，只有基板的曝光场暴露于euv辐射。 保持相邻区域中的模式完整性。

    SYSTEM, METHOD AND RETICLE FOR IMPROVED PATTERN QUALITY IN EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY AND METHOD FOR FORMING THE RETICLE
    2.
    发明申请
    SYSTEM, METHOD AND RETICLE FOR IMPROVED PATTERN QUALITY IN EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY AND METHOD FOR FORMING THE RETICLE 有权
    用于改进极端超紫外线（EUV）光刻技术的改进图案质量的系统，方法和反馈及其形成方法

    公开(公告)号：US20140218714A1

    公开(公告)日：2014-08-07

    申请号：US13758114

    申请日：2013-02-04

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    发明人： Chia-Hao HSU ,  Chia-Chen CHEN ,  Jui-Ching WU ,  Shang-Chieh CHIEN ,  Chia-Jen CHEN ,  Chia-Ching HUANG

    IPC分类号： G03F1/00

    CPC分类号： H01L21/0274 ,  G03F1/14 ,  G03F1/22 ,  G03F1/24 ,  G03F7/70283

    摘要： A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.

    摘要翻译： 用于极紫外（euv）光刻工具的掩模版包括形成在掩模版的图像周围形成的不透明边界中的沟槽。 沟槽涂有吸收材料。 掩模版用于与光掩模掩模结合的电子光刻工具，并且掩模版掩模的定位和沟槽的存在组合以防止任何发散的辐射束到达衬底上的任何不期望的区域被图案化。 以这种方式，只有基板的曝光场暴露于euv辐射。 保持相邻区域中的模式完整性。

    METHOD AND APPARATUS FOR ULTRAVIOLET (UV) PATTERNING WITH REDUCED OUTGASSING
    4.
    发明申请
    METHOD AND APPARATUS FOR ULTRAVIOLET (UV) PATTERNING WITH REDUCED OUTGASSING 有权
    用于具有减少的消耗的超紫外线（UV）图案的方法和装置

    公开(公告)号：US20140111781A1

    公开(公告)日：2014-04-24

    申请号：US13654750

    申请日：2012-10-18

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    发明人： Shu-Hao CHANG ,  Tsiao-Chen WU ,  Chia-Hao HSU ,  Chia-Chen CHEN ,  Ying-Yu CHEN ,  Tzu-Li LEE ,  Shang-Chieh CHIEN ,  Jeng-Horng CHEN ,  Anthony YEN

    IPC分类号： G03F7/20

    CPC分类号： G03F7/2002 ,  G03F7/20 ,  G03F7/70916 ,  G03F7/70933

    摘要： A method and apparatus for ultraviolet (UV) and extreme ultraviolet (EUV) lithography patterning is provided. A UV or EUV light beam is generated and directed to the surface of a substrate disposed on a stage and coated with photoresist. A laminar flow of a layer of inert gas is directed across and in close proximity to the substrate surface coated with photoresist during the exposure, i.e. lithography operation. The inert gas is exhausted quickly and includes a short resonance time at the exposure location. The inert gas flow prevents flue gasses and other contaminants produced by outgassing of the photoresist, to precipitate on and contaminate other features of the lithography apparatus.

    摘要翻译： 提供了紫外线（UV）和极紫外（EUV）光刻图案的方法和装置。 产生UV或EUV光束并将其引导到设置在载物台上并涂覆有光致抗蚀剂的基板的表面。 惰性气体层的层流被引导穿过并且紧邻在曝光期间涂覆有光致抗蚀剂的基底表面，即光刻操作。 惰性气体迅速耗尽并且在曝光位置包括短的共振时间。 惰性气体流动防止烟气和其它由光致抗蚀剂脱气产生的污染物沉淀并污染光刻设备的其它特征。

    SYSTEMS AND METHODS OF LOCAL FOCUS ERROR COMPENSATION FOR SEMICONDUCTOR PROCESSES
    5.
    发明申请
    SYSTEMS AND METHODS OF LOCAL FOCUS ERROR COMPENSATION FOR SEMICONDUCTOR PROCESSES 有权
    用于半导体工艺的局部焦点误差补偿的系统和方法

    公开(公告)号：US20140127836A1

    公开(公告)日：2014-05-08

    申请号：US13671581

    申请日：2012-11-08

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    发明人： Chia-Hao HSU ,  Pei-Cheng Hsu ,  Chia-Ching Huang ,  Chih-Ming Chen ,  Chia-Chen Chen

    IPC分类号： H01L21/66 ,  H01L21/02

    CPC分类号： H01L22/12 ,  G03F1/00 ,  G06F17/5068 ,  H01L21/02697 ,  H01L21/31144 ,  H01L21/32051 ,  H01L21/3212 ,  H01L21/32133

    摘要： A system and method of compensating for local focus errors in a semiconductor process. The method includes providing a reticle and applying, at a first portion of the reticle, a step height based on an estimated local focus error for a first portion of a wafer corresponding to the first portion of the reticle. A multilayer coating is formed over the reticle and an absorber layer is formed over the multilayer coating. A photoresist is formed over the absorber layer. The photoresist is patterned, an etch is performed of the absorber layer and residual photoresist is removed.

    摘要翻译： 一种在半导体工艺中补偿局部焦点误差的系统和方法。 该方法包括提供掩模版并且在掩模版的第一部分处施加基于与掩模版的第一部分对应的晶片的第一部分的估计局部聚焦误差的台阶高度。 在掩模版上形成多层涂层，并在多层涂层上形成吸收层。 在吸收层上形成光致抗蚀剂。 对光致抗蚀剂进行图案化，对吸收层进行蚀刻并除去残留的光致抗蚀剂。