公开(公告)号：US20070032043A1

公开(公告)日：2007-02-08

申请号：US10570669

申请日：2004-09-08

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/322 ,  H01L21/3225 ,  H01L21/76254

摘要： Since a supporting wafer contains boron of 9×1018 atoms/cm3 or more, therefore a part of the metal impurities in an active layer wafer and the metal impurities in the wafer can be captured by the boron during the heat treatment for bonding. As a result, metal contamination in the active layer can be reduced. Moreover, the wafer strength is enhanced, thus preventing the wafer slipping. Since the wafer has no COP, micro voids are not detected in the LPD evaluation of the active layer, thereby improving the reliability of the evaluation. Such a bonded wafer can be manufactured at a low cast.

摘要翻译： 由于支撑晶片含有9×10 18原子/ cm 3以上的硼，因此活性层晶片中的一部​​分金属杂质和晶片中的金属杂质可以 在用于接合的热处理期间被硼捕获。 结果，可以减少有源层中的金属污染。 此外，晶片强度提高，从而防止晶片滑动。 由于晶片没有COP，因此在有源层的LPD评价中未检测到微小空隙，从而提高了评价的可靠性。 这种接合晶片可以以低铸造制造。

公开(公告)号：US20070004169A1

公开(公告)日：2007-01-04

申请号：US11105574

申请日：2005-04-14

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/76

CPC分类号： H01L21/76254

摘要： This method for manufacturing a semiconductor substrate is characterized in that the method includes: a step of ion-implanting light element to a predetermined depth position in a single-crystal wafer of which a surface is a cleavage plane; and a step of heat-treating the single-crystal wafer so as to form light-element bubbles along a cleavage plane parallel to the surface of the single-crystal wafer within an ion-implanted region and thereby splitting off a portion of the single-crystal wafer on an ion-implanted side.

摘要翻译： 该半导体衬底的制造方法的特征在于，该方法包括：将光源离子注入到表面为解理面的单晶晶片中的规定深度位置的工序; 以及在离子注入区域内沿着与单晶晶片的表面平行的解理面形成发光元件气泡的单晶晶片的热处理工序，由此分离出单晶晶片的一部分， 离子注入侧的晶体晶片。

公开(公告)号：US5998338A

公开(公告)日：1999-12-07

申请号：US47127

申请日：1998-03-24

申请人： Yasuo Watanabe ,  Akihiko Endo ,  Takateru Umeda ,  Yuh Shiohara ,  Shoji Tanaka

发明人： Yasuo Watanabe ,  Akihiko Endo ,  Takateru Umeda ,  Yuh Shiohara ,  Shoji Tanaka

IPC分类号： C01G1/00 ,  C01G3/00 ,  C30B29/22 ,  H01L39/12 ,  H01L39/24 ,  C04B35/653

CPC分类号： H01L39/126 ,  H01L39/2419 ,  H01L39/2483

摘要： There is provided a method for stably preparing rare earth (RE) 123 type oxide superconductors exhibiting outstanding superconductive properties in the atmosphere. In the method for preparing RE 123-type oxide superconductors by melting, cooling and solidifying a starting composition containing one or more than two kinds of RE such as Y, Sm, Nd, etc., and Ba, Cu and O as constituent elements to crystallize the RE 123-type oxide superconductors, the quantity of replacement between RE and Ba in "RE 123 crystals to be formed" is controlled by changing the initial constitution of the starting composition, for example, by changing the initial constitution to a more Ba-rich side than a composition on a 123-211 (or 422) tie line on a phase diagram to yield RE 123-type oxide superconductors in the atmosphere, which exhibits a critical temperature of 90 K or above and higher critical current density (Jc) in a magnetic field. A trace amount of Pt or CeO.sub.3 may be added to micronize the 211 (or 422) phase so as to further improve Jc.

摘要翻译： 提供了一种稳定地制备在大气中表现出优异的超导性能的稀土（RE）123型氧化物超导体的方法。 在通过熔融，冷却和固化含有一种或多于两种的诸如Y，Sm，Nd等的RE的起始组合物和作为组成元素的Ba，Cu和O的制备RE 123型氧化物超导体的方法中， 使RE 123型氧化物超导体结晶，通过改变起始组成的初始构成来控制“待形成的RE 123晶体中的RE和Ba之间的置换量”，例如通过将初始构成改变为更多的Ba 在相图上的123-211（或422）连接线上的组合物，在大气中产生RE 123型氧化物超导体，其表现出临界温度为90K或更高和更高的临界电流密度（Jc ）在磁场中。 可以添加痕量的Pt或CeO 3以使211（或422）相微粉化，以进一步提高Jc。