公开(公告)号：US20180337064A1

公开(公告)日：2018-11-22

申请号：US15980902

申请日：2018-05-16

申请人： Atomera Incorporated

发明人： HIDEKI TAKEUCHI

IPC分类号： H01L21/322 ,  H01L23/48 ,  H01L21/02 ,  H01L21/768

CPC分类号： H01L21/3225 ,  H01L21/02381 ,  H01L21/02507 ,  H01L21/3221 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L29/151 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2924/15311

摘要： A semiconductor processing method may include forming a superlattice gettering layer on a front side of a semiconductor substrate having a first thickness, epitaxially growing an active semiconductor layer on the superlattice gettering layer opposite the semiconductor substrate, forming at least one semiconductor device in the active semiconductor layer, and forming at least one metal interconnect layer on the active layer, and at least one metal through-via extending from the at least one metal interconnect layer into the semiconductor substrate. The method may further include thinning the semiconductor substrate from a back side thereof to a second thickness less than the first thickness, and thinning the semiconductor substrate. The superlattice gettering layer getters metal ions released by the forming of the at least one metal interconnect layer and at least one metal through-via, and thinning the substrate.

公开(公告)号：US20180108538A1

公开(公告)日：2018-04-19

申请号：US15564952

申请日：2016-04-21

申请人： SUMCO CORPORATION

发明人： Tomokazu KATANO

IPC分类号： H01L21/322 ,  C30B29/06 ,  C30B15/00 ,  C30B33/02 ,  C30B25/18 ,  H01L21/02 ,  H01L29/16 ,  H01L29/34 ,  B28D1/08

CPC分类号： H01L21/3225 ,  B28D1/08 ,  C30B15/00 ,  C30B15/203 ,  C30B25/18 ,  C30B29/06 ,  C30B33/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/16 ,  H01L29/34

摘要： A silicon single crystal is pulled up such that nitrogen concentration of the crystal is 1×1011 to 2×1013 atoms/cm3, the crystal cooling rate is about 4.2° C./min at a temperature of a silicon melting point to 1350° C. and is about 3.1° C./min at a temperature of 1200° C. to 1000° C., and oxygen concentration of a wafer is 9.5×1017 to 13.5×1017 atoms/cm3. After a heat treatment is performed on the wafer sliced from the silicon single crystal in a treatment condition of 875° C. for about 30 min, growth of an epitaxial layer is caused. Thus, an epitaxial wafer in which the number of epitaxial defects is not increased while maintaining predetermined oxygen concentration and slips do not occur is produced.

公开(公告)号：US09865519B2

公开(公告)日：2018-01-09

申请号：US15402329

申请日：2017-01-10

申请人： RAYTHEON COMPANY

发明人： Stephen H. Black ,  Adam M. Kennedy

IPC分类号： H01L23/26 ,  H01L23/10 ,  H01L21/48 ,  H01L21/54 ,  H01L23/04

CPC分类号： H01L23/26 ,  H01L21/3221 ,  H01L21/3225 ,  H01L21/4817 ,  H01L21/54 ,  H01L23/041 ,  H01L23/10

摘要： A system and method for forming a wafer level package. In one example, a substrate used in the wafer level package includes a surface defined by a wafer level package (WLP) region and an external region, and a layer of getter material is disposed on at least a portion of the external region. According to one embodiment, the external region comprises a saw-to-reveal (STR) region of the wafer.

公开(公告)号：US20170256420A1

公开(公告)日：2017-09-07

申请号：US15268006

申请日：2016-09-16

申请人： ZING SEMICONDUCTOR CORPORATION

发明人： DEYUAN XIAO ,  RICHARD R. CHANG

IPC分类号： H01L21/322 ,  H01L21/02

CPC分类号： H01L21/3225 ,  H01L21/02005 ,  H01L21/3003

摘要： The present invention relates to a thermal processing method for wafer. A wafer is placed in an environment filled with a non-oxygenated gas mixture comprising deuterium gas and at least one kind of low active gas, and a rapid heating processing process is performed on a surface of the wafer to heat the wafer to a predetermined high temperature. Then, the wafer is placed in an environment filled with an oxygenated gas mixture, and a rapid cooling processing process is performed on a surface of the wafer. As a result, a denuded zone is formed on the surface of the wafer, deuterium atoms, which may be released to improve characteristics at an interface of semiconductor devices in a later fabrication process, are held in the wafer, and bulk micro-defects are formed far from the semiconductor devices.

公开(公告)号：US20170253995A1

公开(公告)日：2017-09-07

申请号：US15519859

申请日：2015-09-17

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Wei Feng QU ,  Fumio TAHARA ,  Masahiro SAKURADA ,  Shuji TAKAHASHI

IPC分类号： C30B33/02 ,  H01L21/322 ,  C30B29/06

CPC分类号： C30B33/02 ,  C30B29/06 ,  H01L21/3225

摘要： A method for heat-treating a silicon single crystal wafer by an RTA treatment, including: putting a silicon single crystal wafer having an Nv region for the entire plane of the silicon single crystal wafer or an Nv region containing an OSF region for the silicon single crystal wafer entire plane into an RTA furnace, performing pre-heating at temperature lower than temperature at which silicon reacts with NH3 while supplying gas that contains NH3 into the RTA furnace, subsequently stopping the supply of the gas containing NH3 and starting supply of Ar gas to start an RTA treatment under Ar gas atmosphere in which the NH3 gas remains. This provide a method for heat-treating a silicon single crystal wafer that give gettering capability without degrading TDDB properties even to a silicon single crystal wafer in which the entire plane is an Nv region or an Nv region containing an OSF region.

公开(公告)号：US09576800B2

公开(公告)日：2017-02-21

申请号：US15182443

申请日：2016-06-14

申请人： SUMCO Corporation

发明人： Takeshi Kadono

IPC分类号： H01L21/265 ,  H01L21/02 ,  H01L27/146 ,  H01L21/322

CPC分类号： H01L21/26566 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/3221 ,  H01L21/3225 ,  H01L27/14687

摘要： Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of producing the epitaxial wafer. A method of producing an epitaxial silicon wafer includes a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and a second step of forming an epitaxial layer on the modifying layer of the silicon wafer.

摘要翻译： 提供了一种外延硅晶片，其由位错簇引起的外延缺陷和通过较高的吸杂能力实现的具有减少的金属污染的COP和一种制造外延晶片的方法。 一种外延硅晶片的制造方法，其特征在于，包括：第一工序，在硅晶片的表面部照射不含位错簇的硅晶片和具有簇离子的COP，形成由所述簇离子的构成元素形成的改性层; 以及在硅晶片的改性层上形成外延层的第二步骤。

公开(公告)号：US09570321B1

公开(公告)日：2017-02-14

申请号：US14887544

申请日：2015-10-20

申请人： RAYTHEON COMPANY

发明人： Stephen H. Black ,  Adam M. Kennedy

IPC分类号： H01L21/322 ,  H01L23/26 ,  H01L23/544

CPC分类号： H01L23/26 ,  H01L21/3221 ,  H01L21/3225 ,  H01L21/4817 ,  H01L21/54 ,  H01L23/041 ,  H01L23/10

摘要： A system and method for forming a wafer level package. In one example, a substrate used in the wafer level package includes a surface defined by a wafer level package (WLP) region and an external region, and a layer of getter material is disposed on at least a portion of the external region. According to one embodiment, the external region comprises a saw-to-reveal (STR) region of the wafer.

摘要翻译： 一种用于形成晶片级封装的系统和方法。 在一个示例中，用于晶片级封装的衬底包括由晶片级封装（WLP）区域和外部区域限定的表面，并且吸收材料层设置在外部区域的至少一部分上。 根据一个实施例，外部区域包括晶片的锯切（STR）区域。

公开(公告)号：US09543166B2

公开(公告)日：2017-01-10

申请号：US14931806

申请日：2015-11-03

申请人： Micron Technology, Inc.

发明人： Michael Tan ,  Cheng P. Pour

IPC分类号： H01L21/00 ,  H01L21/76 ,  H01L21/46 ,  H01L21/322 ,  B32B7/12 ,  H01J7/18 ,  H01L23/20 ,  H01L23/28 ,  H01L23/26 ,  H01L21/56 ,  H01L23/00 ,  H01L27/146 ,  H01L31/18 ,  H01L51/52 ,  H01L23/31

CPC分类号： H01L23/26 ,  H01L21/3221 ,  H01L21/3225 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/564 ,  H01L27/14698 ,  H01L31/186 ,  H01L51/5259 ,  H01L2224/16225 ,  H01L2924/15311 ,  Y10T428/28

摘要： Disclosed embodiments include external gettering provided by electronic packaging. An external gettering element for a semiconductor substrate, which may be incorporated as part of an electronic packaging for the structure, is disclosed. Semiconductor structures and stacked semiconductor structures including an external gettering element are also disclosed. An encapsulation mold compound providing external gettering is also disclosed. Methods of fabricating such devices are also disclosed.

摘要翻译： 公开的实施例包括由电子包装提供的外部吸气。 公开了一种用于半导体衬底的外部吸杂元件，其​​可以被结合作为用于该结构的电子封装的一部分。 还公开了包括外部吸杂元件的半导体结构和堆叠半导体结构。 还公开了提供外部吸气剂的封装模具化合物。 还公开了制造这种装置的方法。

公开(公告)号：US20160247694A1

公开(公告)日：2016-08-25

申请号：US15052235

申请日：2016-02-24

申请人： SUMCO CORPORATION

发明人： Jun FUJISE ,  Toshiaki ONO

IPC分类号： H01L21/322 ,  H01L29/16 ,  C30B29/06 ,  G01N3/24 ,  C30B15/00 ,  C30B13/00 ,  H01L21/66 ,  H01L29/32

CPC分类号： H01L21/3225 ,  C30B13/00 ,  C30B15/00 ,  C30B29/06 ,  G01N3/24 ,  H01L22/12 ,  H01L22/20 ,  H01L29/16 ,  H01L29/32

摘要： After determining the size of oxygen precipitates and the residual oxygen concentration in a silicon wafer after heat treatment performed in a device fabrication process; the critical shear stress τcri at which slip dislocations are formed in the silicon wafer in the device fabrication process is determined based on the obtained size of the oxygen precipitates and residual oxygen concentration; and the obtained critical shear stress τcri and the thermal stress τ applied to the silicon wafer in the heat treatment of the device fabrication process are compared, thereby determining that slip dislocations are formed in the silicon wafer in the device fabrication process when the thermal stress τ is equal to or more than the critical shear stress τcri, or determining that slip dislocations are not formed in the silicon wafer in the device fabrication process when the thermal stress τ is less than the critical shear stress τcri.

摘要翻译： 在器件制造过程中进行热处理后，确定氧析出物的尺寸和硅晶片中的残留氧浓度; 基于获得的氧沉淀物的尺寸和残余氧浓度来确定在器件制造工艺中在硅晶片中形成滑移位错的临界剪切应力τcri; 并且比较了在器件制造工艺的热处理中所获得的临界剪切应力τcri和施加到硅晶片的热应力τ，从而确定在器件制造工艺中在硅晶片中形成滑动位错时，当热应力τ 等于或大于临界剪切应力τcri，或者当热应力τ小于临界剪切应力τcri时，确定在器件制造过程中在硅晶片中不形成滑移位错。

公开(公告)号：US20160240677A1

公开(公告)日：2016-08-18

申请号：US15138526

申请日：2016-04-26

申请人： SUMCO CORPORATION

发明人： Toshiaki ONO ,  Yumi HOSHINO

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/161 ,  H01L29/165 ,  H01L29/08 ,  H01L29/16

CPC分类号： H01L29/7848 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/3225 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7847

摘要： A method of manufacturing an epitaxial wafer, including a silicon substrate having a surface sliced from single-crystalline silicon and a silicon epitaxial layer deposited on the surface of the silicon substrate, includes an oxygen concentration controlling heat treatment process in which a heat treatment of the epitaxial layer is performed under a non-oxidizing atmosphere after the epitaxial growth such that an oxygen concentration of the surface of the silicon epitaxial layer is set to 1.0×1017 to 12×1017 atoms/cm3 (ASTM F-121, 1979).

摘要翻译： 一种制造外延晶片的方法，包括具有从单晶硅切割的表面的硅衬底和沉积在硅衬底的表面上的硅外延层的硅衬底，包括氧浓度控制热处理工艺，其中， 在外延生长后，在非氧化性气氛下进行外延层，使得硅外延层的表面的氧浓度为1.0×10 17〜12×10 17原子/ cm 3（ASTM F-121,1979）。