公开(公告)号：US6051491A

公开(公告)日：2000-04-18

申请号：US938634

申请日：1997-09-26

申请人： Shinya Ito

发明人： Shinya Ito

IPC分类号： H01L21/285 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002

摘要： In producing a multilevel interconnection structure, an insulator film is placed on and bonded to interconnecting lines laid on an insulating layer on a semiconductor substrate such that all the spacings between the interconnecting lines are left as vacant spaces. For example, the insulator film is a polyimide film or a silicon oxide film. The vacant spaces serve the purpose of reducing capacitance between adjacent interconnecting lines. After forming contact holes in the insulator film and filling the contact holes with a metal, upper-level interconnecting lines are laid on the insulator film.

摘要翻译： 在制造多层互连结构时，将绝缘膜放置在半导体衬底上的布置在绝缘层上的互连线上并结合到互连线之间的所有间隔留作空格。 例如，绝缘膜是聚酰亚胺膜或氧化硅膜。 空闲空间用于减小相邻互连线之间的电容。 在绝缘膜形成接触孔并用金属填充接触孔之后，将上层互连线铺设在绝缘膜上。