公开(公告)号：US20150048312A1

公开(公告)日：2015-02-19

申请号：US14496048

申请日：2014-09-25

申请人： International Business Machines Corporation ,  Taiwan Bluestone Technology Ltd. ,  Karlsruhe Institute of Technology

发明人： Phaedon Avouris ,  Christos Dimitrakopoulos ,  Damon B. Farmer ,  Mathias B. Steiner ,  Michael Engel ,  Ralph Krupke ,  Yu-Ming Lin

IPC分类号： H01L29/06 ,  H01L29/45 ,  H01L29/16

CPC分类号： H01L29/0669 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02376 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/413 ,  H01L29/45 ,  H01L51/0048 ,  H01L51/0512 ,  H01L51/102 ,  Y10S977/742

摘要： A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed on the surface of the substrate. The electrically insulating portion of the substrate is interposed between the bulk portion of the substrate and the second graphene electrode. The second graphene electrode is disposed opposite the first graphene electrode to define an exposed substrate area therebetween.

摘要翻译： 半导体器件包括具有至少一个电绝缘部分的衬底。 第一石墨烯电极形成在基板的表面上，使得电绝缘部分插入在基板的主体部分和第一石墨烯电极之间。 形成在基板表面上的第二个石墨烯电极。 基板的电绝缘部分插入在基板的主体部分和第二石墨烯电极之间。 第二石墨烯电极与第一石墨烯电极相对设置，以限定其间的暴露的基板区域。