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    GATED III-V SEMICONDUCTOR STRUCTURE AND METHOD
    81.
    发明申请
    GATED III-V SEMICONDUCTOR STRUCTURE AND METHOD 有权
    GATED III-V半导体结构与方法

    公开(公告)号：US20130153963A1

    公开(公告)日：2013-06-20

    申请号：US13389127

    申请日：2011-06-22

    申请人： James R. Shealy ,  Richard Brown

    发明人： James R. Shealy ,  Richard Brown

    IPC分类号： H01L29/778 ,  H01L29/66

    CPC分类号： H01L29/778 ,  H01L21/02381 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A gated III-V semiconductor structure and a method for fabricating the gated III-V semiconductor structure includes a threshold modifying dopant region within a III-V semiconductor barrier layer at the base of an aperture through a passivation layer that otherwise passivates the III-V semiconductor barrier layer. The passivation layer, which may comprise an aluminum-silicon nitride material, has particular bandgap and permittivity properties that provide for enhanced performance of a III-V semiconductor device that derives from the III-V semiconductor structure absent a field plate. The threshold modifying dopant region provides the possibility for forming both an enhancement mode gated III-V semiconductor structure and a depletion mode III-V semiconductor structure on the same substrate. The threshold modifying dopant region when comprising a magnesium (Mg) threshold modifying dopant may be incorporated into the gates III-V semiconductor structure using a dicyclopentadienyl magnesium (Cp2Mg) vapor diffusion method or a magnesium-silicon nitride (MgSiN) solid state diffusion method.

    摘要翻译： 门III-V半导体结构和用于制造栅极III-V半导体结构的方法包括在通过钝化层的孔底部的III-V半导体阻挡层内的阈值修改掺杂剂区域，否则钝化层III-V 半导体阻挡层。 可以包括铝 - 氮化硅材料的钝化层具有特定的带隙和介电常数特性，其提供了不存在场板的III-V半导体结构的III-V半导体器件的增强的性能。 阈值修改掺杂剂区域提供在同一衬底上形成增强模式门控III-V半导体结构和耗尽型III-V半导体结构的可能性。 使用二环戊二烯基镁（Cp2Mg）蒸气扩散法或镁 - 氮化硅（MgSiN）固态扩散法可以将包含镁（Mg）阈值修饰掺杂剂的阈值修饰掺杂剂区域结合到栅极III-V半导体结构中。

    CHEMICAL VAPOR DEPOSITION PROCESS FOR ALUMINUM SILICON NITRIDE
    82.
    发明申请
    CHEMICAL VAPOR DEPOSITION PROCESS FOR ALUMINUM SILICON NITRIDE 有权
    化学气相沉积工艺的氮化硅

    公开(公告)号：US20120156895A1

    公开(公告)日：2012-06-21

    申请号：US13380144

    申请日：2010-06-28

    申请人： James R. Shealy ,  Richard Brown

    发明人： James R. Shealy ,  Richard Brown

    IPC分类号： H01L21/31

    CPC分类号： H01L21/318 ,  C23C16/34 ,  H01L21/02145 ,  H01L21/02271

    摘要： A chemical vapor deposition method for forming an aluminum-silicon nitride layer upon a substrate uses an aluminum precursor, a silicon precursor and a nitrogen precursor under chemical vapor deposition conditions to deposit the aluminum-silicon nitride layer upon the substrate. The aluminum-silicon nitride layer has an index of refraction interposed between silicon nitride and aluminum nitride. The aluminum-silicon nitride layer also has a bandgap from about 4.5 to about 6 eV and a permittivity from about 6×10̂-11 to about 8×10̂-11 F/m. The aluminum-silicon nitride layer may be further thermally annealed to reduce a hydrogen content of the aluminum-silicon nitride layer.

    摘要翻译： 用于在基板上形成铝 - 氮化硅层的化学气相沉积方法在化学气相沉积条件下使用铝前体，硅前驱体和氮前体，以将铝 - 氮化硅层沉积在基底上。 铝硅氮化物层具有置于氮化硅和氮化铝之间的折射率。 铝 - 氮化硅层还具有约4.5至约6eV的带隙，介电常数约为6×10-11至约8×10 -11F / m。 铝 - 氮化硅层可进一步热退火以降低铝 - 氮化硅层的氢含量。

    SYSTEM AND METHOD FOR pH FORMULATIONS
    84.
    发明申请
    SYSTEM AND METHOD FOR pH FORMULATIONS 审中-公开
    pH配方的系统和方法

    公开(公告)号：US20120045846A1

    公开(公告)日：2012-02-23

    申请号：US13214353

    申请日：2011-08-22

    申请人： Richard Brown ,  Burleigh Hutchins ,  Ernesto Freire

    发明人： Richard Brown ,  Burleigh Hutchins ,  Ernesto Freire

    IPC分类号： G01N21/64 ,  C09K3/00

    CPC分类号： G01N21/6486 ,  G01N1/38 ,  G01N33/6803 ,  G01N35/1065 ,  G01N35/1072

    摘要： A system and method for creating a buffer solution having a desired pH value is disclosed. The method uses two known buffer solutions, each with predetermined pH values, and determines a mathematical relationship which defines the amount of each known buffer solution needed to create the buffer solution with the desired pH. This method can then be used to create one or more denaturation graphs, which demonstrate the stability of a protein at a given pH level.

    摘要翻译： 公开了一种用于产生具有所需pH值的缓冲溶液的系统和方法。 该方法使用两个已知的缓冲溶液，每个具有预定的pH值，并确定数学关系，其定义了产生具有所需pH的缓冲溶液所需的每种已知缓冲溶液的量。 然后可以使用该方法来产生一个或多个变性图，其证明在给定pH水平下蛋白质的稳定性。

    SYSTEM FOR CREATION OF FORMULATIONS AND GENERATION OF DENATURATION GRAPHS
    85.
    发明申请
    SYSTEM FOR CREATION OF FORMULATIONS AND GENERATION OF DENATURATION GRAPHS 有权
    制作和制作遗传图谱系统

    公开(公告)号：US20120045367A1

    公开(公告)日：2012-02-23

    申请号：US13214361

    申请日：2011-08-22

    申请人： Richard Brown ,  Burleigh Hutchins ,  Ernesto Freire

    发明人： Richard Brown ,  Burleigh Hutchins ,  Ernesto Freire

    IPC分类号： G01N33/50

    CPC分类号： G01N21/6486 ,  G01N1/38 ,  G01N33/6803 ,  G01N35/1065 ,  G01N35/1072

    摘要： A system for automatically creating a denaturation curve is disclosed. In accordance with certain embodiments, a movement system including a unit having a plurality of cannulas is used. The cannulas are in fluid communication with a fluid system, which allows the cannulas to draw in and dispense fluid. A measurement system is included which draws fluid from a well into a detector to determine a characteristic of the fluid. A controller is used to control these systems and also to create a denaturation graph from the measured characteristics. In another embodiment, a plurality of formulations may be created using the system.

    摘要翻译： 公开了一种自动生成变性曲线的系统。 根据某些实施例，使用包括具有多个插管的单元的移动系统。 插管与流体系统流体连通，这允许插管吸入和分配流体。 包括测量系统，其将流体从井抽入检测器以确定流体的特性。 控制器用于控制这些系统，并且还可以根据测量的特征创建变性图。 在另一个实施方案中，可以使用该系统产生多种制剂。

    System and method of use for electrochemical measurement of corrosion
    88.
    发明申请
    System and method of use for electrochemical measurement of corrosion 审中-公开
    用于电化学测量腐蚀的系统和方法

    公开(公告)号：US20080179198A1

    公开(公告)日：2008-07-31

    申请号：US11698921

    申请日：2007-01-29

    申请人： Michelle S. Burgess ,  Richard Brown

    发明人： Michelle S. Burgess ,  Richard Brown

    IPC分类号： G01N17/02 ,  G01N27/26

    CPC分类号： G01N17/02

    摘要： A system and method of use is provided for using electrochemical impedance spectroscopy to determine the corrosion rates of coupled metals. Two dissimilar metals are coupled together and exposed to a saltwater electrolyte in an electrochemical cell. A variable frequency current is passed through the cell and collected at the coupled metals. The impedance and phase angle of the collected current data are plotted verses frequency. The plotted data are compared to and analogized to a known plot for physical electric circuits. When a matching plot and circuit are found, the corrosion rate data associated with the matched plot are used to determine the corrosion rates of the coupled metals.

    摘要翻译： 提供了一种使用电化学阻抗谱来确定耦合金属的腐蚀速率的系统和使用方法。 两种不同的金属耦合在一起并暴露于电化学电池中的盐水电解质。 可变频率电流通过电池并在耦合的金属处收集。 收集的电流数据的阻抗和相位角与频率相关。 将绘制的数据与物理电路的已知图进行比较并类比。 当找到匹配的曲线和电路时，使用与匹配图相关联的腐蚀速率数据来确定耦合金属的腐蚀速率。

    Separation Apparatus and Method
    89.
    发明申请
    Separation Apparatus and Method 审中-公开
    分离装置及方法

    公开(公告)号：US20080087601A1

    公开(公告)日：2008-04-17

    申请号：US11927033

    申请日：2007-10-29

    申请人： Kyungyoon Min ,  Richard Brown ,  Alp Akonur

    发明人： Kyungyoon Min ,  Richard Brown ,  Alp Akonur

    IPC分类号： B01D21/26

    CPC分类号： A61M1/3693 ,  A61M1/3696 ,  A61M1/38 ,  A61M2205/128 ,  B04B5/0442 ,  B04B2005/045

    摘要： A separation apparatus and method are employed using a separation channel for rotation about an axis. Such channel includes radially spaced apart inner and outer side wall portions and an end wall portion. An inlet conveys fluid into the channel. A barrier is located in the channel intermediate of the inner and outer side wall portions. A first flow path communicates between upstream and downstream sides of the barrier. A collection region may be located downstream of the barrier for communication with the first flow path. An outer side wall section of the channel may be positioned radially outward of an upstream section thereof. The barrier may join the outer side wall portion along a substantial portion of an axial length of the channel. First and second exit flow paths may allow communication with the channel either upstream or downstream of the barrier or both.

    摘要翻译： 使用分离装置和方法来使用用于围绕轴线旋转的分离通道。 这种通道包括径向间隔开的内侧壁部分和外侧壁部分以及端壁部分。 入口将流体输送到通道中。 屏障位于内外侧壁部分的通道中间。 第一流动路径在屏障的上游侧和下游侧之间连通。 收集区域可以位于屏障的下游，用于与第一流动路径通信。 通道的外侧壁部分可以位于其上游部分的径向外侧。 屏障可沿着通道的轴向长度的大部分连接外侧壁部分。 第一和第二出口流动路径可以允许在障碍物的上游或下游与两者的通道进行通信。