公开(公告)号：US06664160B2

公开(公告)日：2003-12-16

申请号：US10298564

申请日：2002-11-19

申请人： Dae-Gyu Park ,  Heung-Jae Cho

发明人： Dae-Gyu Park ,  Heung-Jae Cho

IPC分类号： H01L2362

CPC分类号： H01L29/517 ,  C23C16/405 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31604 ,  H01L29/66545

摘要： A method for forming a gate structure beginning with a semiconductor substrate provided with an isolation region formed therein. An HfO2 layer and a conductive layer are formed on the semiconductor substrate, subsequently. The conductive layer and the HfO2 layer are patterned into the gate structure. By utilizing an HfO2 layer as a gate dielectric, an effective K of the gate dielectric can be controlled to within 18 to 25. In addition, by employing a CVD method for forming the HfO2 layer, it is possible to obtain a high K gate dielectric with excellent leakage current characteristic as well as a low interface state with both a gate electrode and a semiconductor substrate.

摘要翻译： 一种形成栅极结构的方法，从形成有隔离区域的半导体衬底开始。 随后在半导体衬底上形成HfO 2层和导电层。 将导电层和HfO 2层图案化成栅极结构。 通过使用HfO 2层作为栅极电介质，可以将栅极电介质的有效K控制在18〜25的范围内。此外，通过采用CVD法形成HfO 2层，可以获得高K栅极电介质 具有优异的漏电流特性以及与栅电极和半导体衬底两者的低接口状态。