公开(公告)号：US12104246B2

公开(公告)日：2024-10-01

申请号：US17718205

申请日：2022-04-11

Applicant: Applied Materials, Inc.

Inventor： David Fenwick ,  Jennifer Y. Sun

IPC: C23C16/44 ,  C23C16/40 ,  C23C16/455 ,  C23C28/04

CPC classification number: C23C16/4404 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4408 ,  C23C16/45529 ,  C23C16/45531 ,  C23C28/042

Abstract: A method comprises depositing a first layer of aluminum oxide onto a surface of a chamber component via atomic layer deposition (ALD). The method further comprises depositing a second layer of yttrium oxide onto a surface of the chamber component via ALD, depositing a third layer of zirconium oxide onto the surface of the chamber component via ALD, and forming a corrosion and erosion resistant coating comprising a YZrxOy solid state phase of the second layer and the third layer, wherein x and y have values that are based on a number of repetitions of the atomic layer deposition process that are used to deposit the second layer and a number of repetitions of the atomic layer deposition process that are used to deposit the third layer.

公开(公告)号：US12084778B2

公开(公告)日：2024-09-10

申请号：US16898149

申请日：2020-06-10

Applicant: Entegris, Inc.

Inventor： Bryan C. Hendrix ,  David W. Peters ,  Weimin Li ,  Carlo Waldfried ,  Richard A. Cooke ,  Nilesh Gunda ,  I-Kuan Lin

IPC: C23C28/04 ,  B01D39/20 ,  B01D67/00 ,  C23C14/24 ,  C23C14/50 ,  C23C16/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C28/044 ,  B01D39/2027 ,  B01D67/00 ,  C23C14/243 ,  C23C14/50 ,  C23C16/042 ,  C23C16/403 ,  C23C16/404 ,  C23C16/405 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45555 ,  C23C16/56 ,  C23C28/042 ,  B01D2239/0478 ,  B01D2239/1216

Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

公开(公告)号：US20240287381A1

公开(公告)日：2024-08-29

申请号：US18573268

申请日：2022-06-30

Applicant: ALEDIA

Inventor： Eleonora GARONI ,  Christophe LINCHENEAU

IPC: C09K11/02 ,  B82Y20/00 ,  B82Y40/00 ,  C08K9/04 ,  C09K11/08 ,  C09K11/88 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L33/50

CPC classification number: C09K11/025 ,  C08K9/04 ,  C09K11/0883 ,  C09K11/883 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4417 ,  C23C16/45525 ,  H01L33/502 ,  B82Y20/00 ,  B82Y40/00 ,  C08K2201/011

Abstract: The invention relates to a protected and light-emitting nanoparticle (5a) which is composed of a light-emitting nanoparticle (8a) in the form of a light-emitting core (1), said core (1) being coated with at least one oxidation protection layer (3), said nanoparticle (5a) further comprising a layer (4) formed of second ligands (6) which are grafted to the surface of said oxidation protection layer (3). The invention also relates to a method for producing this nanoparticle (5a) and the use thereof for optoelectronic device radiation converters.

公开(公告)号：US12071684B2

公开(公告)日：2024-08-27

申请号：US18123763

申请日：2023-03-20

Applicant: Rosemount Aerospace Inc.

Inventor： Steven Poteet ,  Marc E. Gage ,  Blair A. Smith

IPC: C23C16/04 ,  C23C16/30 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  G01P13/02

CPC classification number: C23C16/045 ,  C23C16/303 ,  C23C16/402 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4404 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/45555 ,  G01P13/025

Abstract: A method can include vapor depositing a corrosion resistant coating to internal and external surfaces of a metallic air data probe. For example, vapor depositing can include using atomic layer deposition (ALD). The method can include placing the metallic air data probe in a vacuum chamber and evacuating the vacuum chamber before using vapor deposition. The corrosion resistant coating can be or include a ceramic coating. In certain embodiments, vapor depositing can include applying a first precursor, then applying a second precursor to the first precursor to form the ceramic coating.

公开(公告)号：US12043893B2

公开(公告)日：2024-07-23

申请号：US16814805

申请日：2020-03-10

Applicant: Forge Nano, Inc.

Inventor： David King ,  Arrelaine Dameron ,  James Trevey ,  Paul Lichty ,  Andrew Argo ,  Kyle Bourgois ,  James Ragonesi ,  Kyle Ingham ,  David Jackson ,  Ryon Tracy ,  Nghi Nguyen ,  Adam Lyon ,  Jose Villagomez ,  Garrett Curry

IPC: C23C16/455 ,  B01J2/00 ,  B22F1/16 ,  C04B41/81 ,  C23C16/40 ,  C23C16/44 ,  C23C16/442 ,  C23C16/52

CPC classification number: C23C16/45544 ,  B01J2/006 ,  B22F1/16 ,  C04B41/81 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4417 ,  C23C16/442 ,  C23C16/45555 ,  C23C16/45561 ,  C23C16/52 ,  B22F2999/00 ,  B22F2999/00 ,  B22F1/16 ,  C23C16/00

Abstract: A system, apparatus and method are provided for processing articles. The system includes subsystems for synthesizing, pre-treating, conducting a vapor phase coating process and post-treating articles in the form of powders and solid or porous workpieces. The apparatus permits vapor phase synthesis, treatment and deposition processes to be performed with high efficiency and at high overall throughput. The methods include converting solids, liquids or gases into gaseous and solid streams that can be separated or exchanged with or without treatment and/or coating steps, and produce optimized composite articles for specific applications.

公开(公告)号：US20240240310A1

公开(公告)日：2024-07-18

申请号：US18562071

申请日：2022-05-20

Applicant: PICOSUN OY

Inventor： Jesse KALLIOMÄKI

IPC: C23C16/44 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32

CPC classification number: C23C16/4404 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45553 ,  H01J37/32495

Abstract: A method of producing coated substrates resistant to plasma corrosion and a related coating are provided. The method includes depositing, over at least a portion of a substrate, an yttrium-containing plasma resistant coating through a process of chemical deposition in vapour phase, preferably, through Atomic Layer Deposition (ALD). In some configurations, the plasma resistant coating is formed with a mixture film composed of a mixture of an aluminium oxide compound and an yttrium oxide compound, for example. In some instances, a multilayer laminate structure including the mixture films alternating with deposition films composed of a metal fluoride compound is formed. A coated component for use in a plasma processing apparatus and a method for improving resistance of a substrate to plasma corrosion are further provided.

公开(公告)号：US20240239817A1

公开(公告)日：2024-07-18

申请号：US18524155

申请日：2023-11-30

Applicant: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY

Inventor： Jongwook PARK ,  Woojin JEON ,  Sunwoo PARK ,  Hayoon LEE ,  Sang Wook PARK ,  Yoona CHOI ,  Yeong Jae HEO

IPC: C07F7/00 ,  C01G25/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02

CPC classification number: C07F7/00 ,  C01G25/02 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/02189 ,  H01L21/0228 ,  H01L28/40

Abstract: Disclosed are a metal oxide thin film precursor represented by Chemical Formula 1, a method of fabricating a metal oxide thin film using the same, and a semiconductor device including the metal oxide thin film.




The definition of Chemical Formula 1 is as described in the detailed description.

公开(公告)号：US12040177B2

公开(公告)日：2024-07-16

申请号：US17401324

申请日：2021-08-13

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32

CPC classification number: H01L21/022 ,  C23C16/405 ,  C23C16/4408 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32146 ,  H01J37/32449 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02274 ,  H01L21/0228 ,  H01J2237/332

Abstract: Methods for forming a laminate film on substrate by a plasma-enhanced cyclical deposition process are provided. The methods may include: providing a substrate into a reaction chamber, and depositing on substrate a metal oxide laminate film by alternatingly depositing a first metal oxide film and a second metal oxide film different from the first metal oxide film, wherein depositing the first metal oxide film and the second metal oxide film comprises, contacting the substrate with sequential and alternating pulses of a metal precursor and an oxygen reactive species generated by applying RF power to a reactant gas comprising at least nitrous oxide (N2O).

公开(公告)号：US20240234133A1

公开(公告)日：2024-07-11

申请号：US18543996

申请日：2023-12-18

Applicant: Applied Materials, Inc.

Inventor： Steven C. H. HUNG ,  Theresa Kramer GUARINI ,  Johanes F. SWENBERG

IPC: H01L21/02 ,  C23C8/02 ,  C23C8/16 ,  C23C8/80 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  C23C28/04

CPC classification number: H01L21/02359 ,  C23C8/02 ,  C23C8/16 ,  C23C8/80 ,  C23C16/0209 ,  C23C16/405 ,  C23C16/45544 ,  C23C16/56 ,  C23C28/042 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02181

Abstract: A method of forming a semiconductor structure includes performing a pre-treatment process, including annealing a surface of a substrate in a hydrogen (H2) ambient, performing an interfacial formation process, including thermally oxidizing the pre-treated surface of the substrate to form an interfacial layer, and performing a post-treatment process, including annealing a surface of the formed interfacial layer in an ammonia (NH3) ambient.

公开(公告)号：US12034020B2

公开(公告)日：2024-07-09

申请号：US16969572

申请日：2020-05-15

Applicant: HANGZHOU MDK OPTO ELECTRONICS CO., LTD

Inventor： Wenzhi Ge ,  Yiwei Wang ,  Gang Wang ,  Kevin Weng ,  Hirokazu Yajima ,  Junnan Jiang

IPC: C23C16/40 ,  C23C16/02 ,  C23C16/455 ,  H01L27/146 ,  H04N23/54

CPC classification number: H01L27/14618 ,  C23C16/0227 ,  C23C16/402 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/45555 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14685 ,  H04N23/54 ,  H01L27/14689

Abstract: A CVD preparation method for minimizing camera module dot defects includes: performing ultrasonic cleaning and drying on a base substrate to obtain a pre-treated base substrate; placing the pre-treated base substrate into a reaction chamber, evacuating, and introducing nitrogen or inert gas to slightly positive pressure; simultaneously introducing precursor I and precursor II at a temperature of 500-700° C. to deposit a low-refractive-index L layer on the base substrate; halting introduction of the precursor I and the precursor II, and purging the reaction chamber with nitrogen or the inert gas; introducing raw gas precursor III and precursor IV at a temperature of 600-800° C. to deposit a high-refractive-index H layer on the low-refractive-index L layer; and halting introduction of the precursor III and precursor IV, and purging the reaction chamber with nitrogen or inert gas; and cooling to room temperature to obtain an optical element with coating films having different refractive indices.