公开(公告)号：US20210265346A1

公开(公告)日：2021-08-26

申请号：US16798685

申请日：2020-02-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jing-Yi Lin ,  Chih-Chuan Yang ,  Shih-Hao Lin

IPC: H01L27/092 ,  H01L21/8238 ,  H01L27/02

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming an epitaxial structure having a first doping type over a first portion of a semiconductor substrate. A second portion of the semiconductor substrate is formed over the epitaxial structure and the first portion of the semiconductor substrate. A first doped region having the first doping type is formed in the second portion of the semiconductor substrate and directly over the epitaxial structure. A second doped region having a second doping type opposite the first doping type is formed in the second portion of the semiconductor substrate, where the second doped region is formed on a side of the epitaxial structure. A plurality of fins of the semiconductor substrate are formed by selectively removing portions of the second portion of the semiconductor substrate.

公开(公告)号：US20200176303A1

公开(公告)日：2020-06-04

申请号：US16450278

申请日：2019-06-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chuan Yang ,  Chang-Ta Yang

IPC: H01L21/762 ,  H01L27/11 ,  H01L21/3065

Abstract: A method includes receiving a structure that includes a substrate including a first well region having a first dopant type and a second well region having a second dopant type that is opposite to the first dopant type; and fins extending above the substrate. The method further includes forming a patterned etch mask on the structure, wherein the patterned etch mask provides an opening that is directly above a first fin of the fins, wherein the first fin is directly above the first well region. The method further includes etching the structure through the patterned etch mask, wherein the etching removes the first fin and forms a recess in the substrate that spans from the first well region into the second well region; and forming a dielectric material between remaining portions of the fins and within the recess.