公开(公告)号：US20170345936A1

公开(公告)日：2017-11-30

申请号：US15235233

申请日：2016-08-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuo-Cheng Ching ,  Kuan-Ting Pan ,  Ching-Wei Tsai ,  Ying-Keung Leung ,  Chih-Hao Wang ,  Carlos H. Diaz

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/7851 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: The present disclosure provides a fin-like field effect transistor (FinFET) device and a method of fabrication thereof. The method includes forming a fin on a substrate and forming a gate structure wrapping the fin. A pair of spacers is formed adjacent to the gate structure and the gate structure is removed. Afterwards, a pair of oxide layers is deposited adjacent to the pair of spacers. A pair of gate dielectric layers is deposited next to the pair of oxide layers. Finally, a metal gate is formed between the pair of gate dielectric layers.