公开(公告)号：US08264663B2

公开(公告)日：2012-09-11

申请号：US11956259

申请日：2007-12-13

申请人： Woon-Sig Hong

发明人： Woon-Sig Hong

IPC分类号： G03B27/52 ,  G01N21/00 ,  G06K9/00

CPC分类号： G03F1/82 ,  G03F7/70525 ,  G03F7/70866 ,  G03F7/70916

摘要： Disclosed is a management method of a mask for exposure utilizing exposure energy information of a wafer. According to the present invention, in case of exposing wafers in exposure apparatuses, information on masks loaded on exposure apparatuses are calculated from the exposure apparatuses, the light energy values applied during the exposure of wafers by the corresponding masks are calculated, the calculated light energy values are stored in the data server, the same data are collected from all wafer exposure processes performed at plural exposure apparatuses within the semiconductor FAB and the exposure information about the exposure energy relating to plural masks used by plural exposure apparatuses are accumulated and managed. Accordingly, the exposure degree of a mask about the exposure energy, as a direct cause of the contamination of masks such as the crystal growth and haze, is directly calculated and then defects of masks are predicted together with measures according that, so that deterioration of the yield of the semiconductor is prevented and the yield of the semiconductor is increased.

摘要翻译： 公开了利用晶片的曝光能量信息进行曝光的掩模的管理方法。 根据本发明，在曝光装置中曝光晶片的情况下，从曝光装置计算装载在曝光装置上的掩模的信息，计算通过相应的掩模在晶片曝光期间施加的光能值，计算的光能量 值存储在数据服务器中，从在半导体FAB内的多个曝光装置执行的所有晶片曝光处理中收集相同的数据，并且累积和管理与多个曝光装置使用的与多个掩模有关的曝光能量的曝光信息。 因此，直接计算掩模关于曝光能量的曝光度，作为诸如晶体生长和雾度的掩模的污染的直接原因，然后预测掩模的缺陷以及根据其的措施，使得劣化 防止半导体的产量，并且提高半导体的产量。

公开(公告)号：US08305557B2

公开(公告)日：2012-11-06

申请号：US11987226

申请日：2007-11-28

申请人： Woon-Sig Hong

发明人： Woon-Sig Hong

IPC分类号： A61N5/00 ,  G03B27/32 ,  G03B27/54

CPC分类号： G03B27/52

摘要： Disclosed is a system for calculating transmission utility factor value of photo energy for exposure and a method for calculating transmission utility factor value of photo energy utilizing the calculation system in which the photo energy generated from an excimer laser generator passes various optical systems (which include a lens and a reflection mirror and so on), the photo energy used for exposing a wafer is divided by the photo energy generated from the excimer laser generator and the percentage of the result is finally calculated at real time. According to the present invention, an increase of the exposing time due to the lowering of the photo transmission utility factor value and a lowering of productivity in semiconductor are prevented. According to the present invention, the badness or contamination of the optical systems between the excimer laser generator and the exposure device can be also predicted at real time.

摘要翻译： 公开了一种用于计算曝光的光能的传输效用因子值的系统和使用从准分子激光发生器产生的光能通过各种光学系统的计算系统计算光能的传输效用因子值的方法（其包括 透镜和反射镜等），将用于曝光晶片的光能除以由准分子激光发生器产生的光能，并且最终实时计算结果的百分比。 根据本发明，防止由于光传输效用因子值的降低引起的曝光时间的增加和半导体的生产率的降低。 根据本发明，也可以实时地预测准分子激光发生器和曝光装置之间的光学系统的不良或污染。