公开(公告)号：US20190088713A1

公开(公告)日：2019-03-21

申请号：US16137336

申请日：2018-09-20

申请人： IMEC vzw

发明人： Johan Swerts

IPC分类号： H01L27/22 ,  H01L43/10

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01F10/3268 ,  H01F10/3295 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： The disclosed technology generally relates to magnetic devices, and more particular to a magnetic structure, and a magnetic tunnel junction device and a magnetic random access memory including the magnetic structure. According to an aspect, a magnetic structure for a magnetic tunnel junction (MTJ) device includes a free layer, a tunnel barrier layer, a reference layer, a hard magnetic layer, and an inter-layer stack arranged between the hard magnetic layer and the reference layer. The inter-layer stack includes a first ferromagnetic sub-layer, a second ferromagnetic sub-layer and a non-magnetic spacer sub-layer. The non-magnetic spacer sub-layer is arranged in contact with and between the first ferromagnetic sub-layer and the second ferromagnetic sub-layer and is adapted to provide a ferromagnetic coupling of a magnetization of the first ferromagnetic sub-layer and a magnetization of the second ferromagnetic sub-layer. A magnetization direction of the reference layer is fixed by the hard magnetic layer and the inter-layer stack.

公开(公告)号：US20180351089A1

公开(公告)日：2018-12-06

申请号：US15993783

申请日：2018-05-31

申请人： TDK CORPORATION

发明人： Eiji SUZUKI ,  Katsuyuki NAKADA

IPC分类号： H01L43/08 ,  H01L43/10 ,  H01F10/32

CPC分类号： H01L43/08 ,  G11C11/16 ,  H01F10/3268 ,  H01F41/046 ,  H01L43/10

摘要： A laminated structure according to an embodiment includes: a ferromagnetic layer; and a multiferroic layer formed on one surface of the ferromagnetic layer, wherein a surface of the multiferroic layer on the ferromagnetic layer side includes a first region, a crystalline phase of which is rhombohedral, and a second region, a crystalline phase of which is tetragonal.

公开(公告)号：US20180254409A1

公开(公告)日：2018-09-06

申请号：US15911689

申请日：2018-03-05

申请人： TDK CORPORATION

发明人： Katsuyuki NAKADA ,  Kazuumi INUBUSHI

IPC分类号： H01L43/10 ,  H01L43/08 ,  H01F1/00

CPC分类号： H01L43/10 ,  H01F1/0036 ,  H01F10/1936 ,  H01F10/3268 ,  H01L43/08

摘要： A magnetoresistance effect element according to an aspect of the present disclosure includes a first ferromagnetic layer as a magnetization fixed layer including a ferromagnetic Heusler alloy, a second ferromagnetic layer as a magnetization free layer including a ferromagnetic Heusler alloy, and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer, and the nonmagnetic spacer layer includes a nonmagnetic Fe group, Co group, or Ni group Heusler alloy.

公开(公告)号：US10008219B2

公开(公告)日：2018-06-26

申请号：US15153357

申请日：2016-05-12

申请人： Western Digital (Fremont), LLC

发明人： Yuankai Zheng ,  Qunwen Leng

IPC分类号： H01F10/10 ,  G11B5/127 ,  G11B5/31 ,  H01F10/13 ,  C23C14/14 ,  H01F10/32

CPC分类号： G11B5/1272 ,  C23C14/14 ,  G11B5/3143 ,  H01F10/135 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3268

摘要： Apparatuses and methods of recording read heads with a multi-layer anti-ferromagnetic (AFM) layer are provided. The AFM layer has gradient Manganese (Mn) compositions. A multi-layer AFM layer comprises a plurality of sub-layers having different Mn compositions. An upper sub-layer has a higher Mn composition than an lower sub-layer. Different types of gases may be used to deposit each sub-layer and the flow of each gas may be adjusted.

公开(公告)号：US20180158588A1

公开(公告)日：2018-06-07

申请号：US15569978

申请日：2015-06-24

申请人： Intel Corporation

发明人： Sasikanth MANIPATRUNI ,  Anurag CHAUDHRY ,  Dmitri E. NIKONOV ,  Ian A. YOUNG

IPC分类号： H01F10/32 ,  H01L43/10 ,  G11C11/16 ,  G11C11/155 ,  H03K19/16 ,  H01L43/08

CPC分类号： H01F10/3268 ,  G11C11/155 ,  G11C11/1675 ,  H01F10/265 ,  H01L43/08 ,  H01L43/10 ,  H03K19/16 ,  H03K19/18

摘要： Described is an apparatus which comprises: an input ferromagnet to receive a first charge current and to produce a corresponding spin current; and a stack of metal layers configured to convert the corresponding spin current to a second charge current, wherein the stack of metal layers is coupled to the input magnet.

公开(公告)号：US09761368B2

公开(公告)日：2017-09-12

申请号：US14978353

申请日：2015-12-22

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Hariklia Deligianni ,  William J. Gallagher ,  Eugene J. O'Sullivan ,  Naigang Wang

IPC分类号： C23C14/00 ,  H01F27/28 ,  H01F27/24 ,  H01F1/147 ,  H01F41/04 ,  C23C14/14

CPC分类号： H01L28/10 ,  C23C14/14 ,  H01F1/147 ,  H01F1/14708 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3295 ,  H01F17/0006 ,  H01F27/24 ,  H01F27/2804 ,  H01F41/042 ,  H01F41/304 ,  H01F2017/0066 ,  H01F2027/2809 ,  H01L21/0273 ,  H01L21/32051 ,  H01L21/32139

摘要： Disclosed are magnetic structures, including on-chip inductors comprising laminated layers comprising, in order, a barrier and/or adhesion layer, a antiferromagnetic layer, a magnetic growth layer, a soft magnetic layer, an insulating non-magnetic spacer, a soft magnetic layer, a magnetic growth later, an antiferromagnetic layer. Also disclosed are methods of making such structures.

公开(公告)号：US20160260447A1

公开(公告)日：2016-09-08

申请号：US15153357

申请日：2016-05-12

申请人： Western Digital (Fremont), LLC

发明人： YUANKAI ZHENG ,  QUNWEN LENG

IPC分类号： G11B5/127 ,  C23C14/14

CPC分类号： G11B5/1272 ,  C23C14/14 ,  G11B5/3143 ,  H01F10/135 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3268

摘要： Apparatuses and methods of recording read heads with a multi-layer anti-ferromagnetic (AFM) layer are provided. The AFM layer has gradient Manganese (Mn) compositions. A multi-layer AFM layer comprises a plurality of sub-layers having different Mn compositions. An upper sub-layer has a higher Mn composition than an lower sub-layer. Different types of gases may be used to deposit each sub-layer and the flow of each gas may be adjusted.

摘要翻译： 提供了用多层反铁磁（AFM）层记录读取头的装置和方法。 AFM层具有梯度锰（Mn）组成。 多层AFM层包括具有不同Mn组成的多个子层。 上层具有比下层更高的Mn组成。 可以使用不同类型的气体来沉积每个子层，并且可以调节每种气体的流动。

公开(公告)号：US09372241B2

公开(公告)日：2016-06-21

申请号：US12590364

申请日：2009-11-06

申请人： Yuchen Zhou ,  Xuhui Jin ,  Grace Gorman

发明人： Yuchen Zhou ,  Xuhui Jin ,  Grace Gorman

IPC分类号： B05D3/06 ,  G01R33/09 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/30 ,  G11B5/31 ,  G11B5/39 ,  H01F10/32

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/304

摘要： A method by which portions of a wafer level fabrication can be selectively heated by forming plasmon generating layers of specific size, shape, orientation and material on the fabrication and then illuminating the formation with electromagnetic radiation of such wavelength and polarization as will optimally be absorbed by the plasmon generating layers so as to generate plasmons therein. The generated plasmons thereupon produce thermal energy which is transferred to portions of the fabrication with which the plasmon generation layer has thermal contact. This method is particularly advantageous for producing multiple anneals and different magnetic pinning directions for the anti-ferromagnetic pinning layer in each of an array of GMR or TMR devices. In that process, the anti-ferromagnetic layer must be raised above its Curie temperature at which point it loses its anti-ferromagnetic properties and can have a magnetization imposed by application of an external magnetic field. The method can equally well be applied to any wafer level fabrication or deposited film fabrication in which it is desired to heat specific regions to obtain some specified result that is temperature dependent.

摘要翻译： 可以通过在制造上形成特定尺寸，形状，取向和材料的等离子体激元产生层来选择性地加热晶片级制造的部分的方法，然后用最佳被最佳吸收的波长和极化的电磁辐射照射地层 等离子体发生层，以便在其中产生等离子体激元。 所产生的等离子体激元产生热能，其转移到等离子体发生层具有热接触的制造部分。 该方法对于在GMR或TMR器件阵列中的每个中的反铁磁钉扎层产生多个退火和不同的磁性钉扎方向特别有利。 在该过程中，反铁磁层必须升高到高于其居里温度，此时其失去其抗铁磁特性，并且可以通过施加外部磁场而施加磁化强度。 该方法同样可以应用于任何晶片级制造或沉积膜制造，其中期望加热特定区域以获得温度依赖性的一些指定结果。

公开(公告)号：US09361913B1

公开(公告)日：2016-06-07

申请号：US13923991

申请日：2013-06-21

申请人： Western Digital (Fremont), LLC

发明人： Yuankai Zheng ,  Qunwen Leng

IPC分类号： G11B5/31 ,  H01F10/13

CPC分类号： G11B5/1272 ,  C23C14/14 ,  G11B5/3143 ,  H01F10/135 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3268

摘要： Apparatuses and methods of recording read heads with a multi-layer anti-ferromagnetic (AFM) layer are provided. The AFM layer has gradient Manganese (Mn) compositions. A multi-layer AFM layer comprises a plurality of sub-layers having different Mn compositions. An upper sub-layer has a higher Mn composition than an lower sub-layer. Different types of gases may be used to deposit each sub-layer and the flow of each gas may be adjusted.

摘要翻译： 提供了用多层反铁磁（AFM）层记录读取头的装置和方法。 AFM层具有梯度锰（Mn）组成。 多层AFM层包括具有不同Mn组成的多个子层。 上层具有比下层更高的Mn组成。 可以使用不同类型的气体来沉积每个子层，并且可以调节每种气体的流动。

公开(公告)号：US20150341036A1

公开(公告)日：2015-11-26

申请号：US14813934

申请日：2015-07-30

申请人： Sasikanth Manipatruni ,  Dmitri E. Nikonov ,  Ian A. Young

发明人： Sasikanth Manipatruni ,  Dmitri E. Nikonov ,  Ian A. Young

IPC分类号： H03K19/16 ,  H03K17/80

CPC分类号： H03K19/16 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3268 ,  H03K17/80

摘要： High speed precessionally switched magnetic logic devices and architectures are described. In a first example, a magnetic logic device includes an input electrode having a first nanomagnet and an output electrode having a second nanomagnet. The spins of the second nanomagnet are non-collinear with the spins of the first nanomagnet. A channel region and corresponding ground electrode are disposed between the input and output electrodes. In a second example, a magnetic logic device includes an input electrode having an in-plane nanomagnet and an output electrode having a perpendicular magnetic anisotropy (PMA) magnet. A channel region and corresponding ground electrode are disposed between the input and output electrodes.

摘要翻译： 描述了高速开关磁逻辑器件和架构。 在第一示例中，磁逻辑器件包括具有第一纳米磁体的输入电极和具有第二纳米磁体的输出电极。 第二纳米磁体的自旋与第一纳米磁体的自旋不共线。 沟道区域和对应的接地电极设置在输入和输出电极之间。 在第二示例中，磁逻辑器件包括具有面内纳米磁体的输入电极和具有垂直磁各向异性（PMA）磁体的输出电极。 沟道区域和对应的接地电极设置在输入和输出电极之间。