公开(公告)号：US5954874A

公开(公告)日：1999-09-21

申请号：US944393

申请日：1997-10-06

申请人： Charles Eric Hunter

发明人： Charles Eric Hunter

IPC分类号： C30B15/00 ,  C30B15/02 ,  C30B25/02

CPC分类号： C30B15/00 ,  C30B15/02 ,  C30B29/403 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Large diameter single crystals of aluminum nitride (AlN) are grown isotropically by injecting a nitrogen-containing gas into liquid aluminum at elevated temperatures. A seed crystal that is maintained at a temperature below that of the surrounding liquid aluminum is pulled from the melt, while the AlN that is formed in the melt is deposited on the seed crystal. An apparatus for carrying out the method is also disclosed.

公开(公告)号：US5858086A

公开(公告)日：1999-01-12

申请号：US730882

申请日：1996-10-17

申请人： Charles Eric Hunter

发明人： Charles Eric Hunter

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B25/02

CPC分类号： C30B23/005 ,  C30B23/00 ,  C30B25/00 ,  C30B29/38 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T428/265 ,  Y10T428/266

摘要： Bulk, low impurity aluminum nitride (AlN) single crystals are grown by sublimation or similar deposition techniques at growth rates greater than 0.5 mm/hr.

摘要翻译： 通过升华或类似的沉积技术以大于0.5mm / hr的生长速率生长散杂的低杂质氮化铝（AlN）单晶。