公开(公告)号：US20110151664A1

公开(公告)日：2011-06-23

申请号：US13060404

申请日：2008-09-04

Applicant: Jung Wook Lee ,  Young Hoon Park

Inventor： Jung Wook Lee ,  Young Hoon Park

IPC: H01L21/283

CPC classification number: H01L21/28556 ,  C23C8/24 ,  C23C16/06 ,  C23C16/56 ,  C23C28/322 ,  C23C28/34

Abstract: Provided are methods and apparatuses for manufacturing a multilayer metal thin film without additional heat treatment processes. The method of manufacturing a multilayer metal thin film including steps of: (a) forming a first metal layer on a substrate by flowing a first metal precursor into a first reaction container; and (b) forming a second metal layer on the first metal layer by flowing a second metal precursor into a second reaction container, wherein the step (b) is performed in a range of a heat treatment temperature of the first metal layer so that the second metal layer is formed as the first metal layer is heat-treated.

Abstract translation: 提供了用于制造多层金属薄膜而不需要额外的热处理工艺的方法和装置。 一种制造多层金属薄膜的方法，包括以下步骤：（a）通过使第一金属前体流入第一反应容器而在基底上形成第一金属层; 和（b）通过使第二金属前体流入第二反应容器而在第一金属层上形成第二金属层，其中步骤（b）在第一金属层的热处理温度的范围内进行， 随着第一金属层被热处理，形成第二金属层。

公开(公告)号：US20080166887A1

公开(公告)日：2008-07-10

申请号：US11720450

申请日：2005-11-28

Applicant: Ki Hoon Lee ,  Young Hoon Park ,  Sahng Kyoo Lee ,  Tae Wook Seo ,  Ho Seung Chang

Inventor： Ki Hoon Lee ,  Young Hoon Park ,  Sahng Kyoo Lee ,  Tae Wook Seo ,  Ho Seung Chang

IPC: H01L21/31

CPC classification number: G03F7/091 ,  H01L21/0276 ,  H01L21/3146 ,  Y10S438/952

Abstract: Disclosed herein are a method of depositing a thin film and a method of manufacturing a semiconductor using the same, having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of depositing a thin film according to the invention includes (a) depositing an carbon anti-reflective film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the carbon anti-reflective film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from 1 to 100 nm using an atomic layer deposition process. Therefore, an ultrathin film having etching resistance is formed on or in the carbon anti-reflective film and the density and compressive stress of the carbon anti-reflective film are increased, thus increasing etching selectivity.

Abstract translation: 本文公开了一种沉积薄膜的方法和使用该薄膜的半导体的制造方法，通过增加抗蚀性而具有高选择性，同时将与抗反射性相关联的消光系数保持为低。 根据本发明的沉积薄膜的方法包括（a）在基底的底膜上沉积碳抗反射膜; 和（b）在碳抗反射膜的表面或内部添加含有氮（N），氟（F）或硅（Si）的化合物，沉积a：N，aC：F 或aC：Si，具有高选择性，使用原子层沉积工艺，厚度为1至100nm。 因此，在碳抗反射膜上或碳抗反射膜上形成具有耐腐蚀性的超薄膜，并且碳抗反射膜的密度和压缩应力增加，从而增加蚀刻选择性。

公开(公告)号：US08029859B2

公开(公告)日：2011-10-04

申请号：US11507829

申请日：2006-08-22

Applicant: Jung-Wook Lee ,  Byung-Chul Cho ,  Ki-Hoon Lee ,  Tae-Wook Seo

Inventor： Jung-Wook Lee ,  Byung-Chul Cho ,  Ki-Hoon Lee ,  Tae-Wook Seo

IPC: C23C16/00 ,  H05H1/24 ,  C23C16/06

CPC classification number: C23C16/45523 ,  C23C16/30

Abstract: There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—Sb—Te thin film on the wafer; and a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed.

Abstract translation: 提供了一种沉积Ge-Sb-Te薄膜的方法，包括：Ge-Sb-Te薄膜形成步骤，用于进料和吹扫包括Ge，Sb和Te中任一种的第一前体;第二前体，包括 Ge，Sb和Te中的另一个，和包含Ge，Sb和Te中的另一个的第三前体进入并安装晶片的腔室，并在晶片上形成Ge-Sb-Te薄膜; 以及在供给第一至第三前体中的任何一个的同时进料反应气体的反应气体供给步骤。

公开(公告)号：US07842606B2

公开(公告)日：2010-11-30

申请号：US11720450

申请日：2005-11-28

Applicant: Ki Hoon Lee ,  Young Hoon Park ,  Sahng Kyoo Lee ,  Tae Wook Seo ,  Ho Seung Chang

Inventor： Ki Hoon Lee ,  Young Hoon Park ,  Sahng Kyoo Lee ,  Tae Wook Seo ,  Ho Seung Chang

IPC: H01L21/4763 ,  H01L21/02

CPC classification number: G03F7/091 ,  H01L21/0276 ,  H01L21/3146 ,  Y10S438/952

Abstract: Disclosed herein are a method of depositing a thin film and a method of manufacturing a semiconductor using the same, having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of depositing a thin film according to the invention includes (a) depositing an carbon anti-reflective film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the carbon anti-reflective film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from 1 to 100 nm using an atomic layer deposition process. Therefore, an ultrathin film having etching resistance is formed on or in the carbon anti-reflective film and the density and compressive stress of the carbon anti-reflective film are increased, thus increasing etching selectivity.

Abstract translation: 本文公开了一种沉积薄膜的方法和使用该薄膜的半导体的制造方法，通过增加抗蚀性而具有高选择性，同时将与抗反射性相关联的消光系数保持为低。 根据本发明的沉积薄膜的方法包括（a）在基底的底膜上沉积碳抗反射膜; 和（b）在碳抗反射膜的表面或内部添加含有氮（N），氟（F）或硅（Si）的化合物，沉积a：N，aC：F 或aC：Si，具有高选择性，使用原子层沉积工艺，厚度为1至100nm。 因此，在碳抗反射膜上或碳抗反射膜上形成具有耐腐蚀性的超薄膜，并且碳抗反射膜的密度和压缩应力增加，从而增加蚀刻选择性。