公开(公告)号：US20080251692A1

公开(公告)日：2008-10-16

申请号：US11568646

申请日：2005-05-05

Applicant: Masahiro Teshima ,  Razmik Mirzoyan ,  Boris Anatolievich Dolgoshein ,  Sergey Nikolaevich Klemin ,  Elena Viktorovna Popova ,  Leonid Anatolievich Filatov

Inventor： Masahiro Teshima ,  Razmik Mirzoyan ,  Boris Anatolievich Dolgoshein ,  Sergey Nikolaevich Klemin ,  Elena Viktorovna Popova ,  Leonid Anatolievich Filatov

IPC: H01J40/14

CPC classification number: H01L31/107 ,  H01L27/144 ,  H01L27/14643 ,  H01L31/115

Abstract: The invention relates to high-efficient light-recording detectors and can be used for nuclear and laser engineering, and in technical and medical tomography etc.The inventive silicon photoelectric multiplier (variant 1) comprising a p++ type conductivity substrate whose dope additive concentration ranges from 1018 to 1020 cm−3 and which consists of cells, each of which comprises a p-type conductivity epitaxial layer whose dope additive concentration is gradually changeable from 1018 to 1014 cm−3 and which is grown on the substrate, a p-type conductivity layer whose dope additive concentration ranges from 1015 to 1017 cm−3 and a n+ type conductivity layer whose dope additive concentration ranges from 1018 to 1020 cm−3, wherein a polysilicon resistor connecting the n+ type conductivity layer with a feed bar is arranged in each cell on a silicon oxide layer and separating elements are disposed between the cells. Said silicon photoelectric multiplier (variant 2) comprising a n-type conductivity substrate to which a p++-type conductivity whose dope additive concentration ranges from 1018-1020 cm−3 is applied and consists of cells, wherein in each cell a polysilicon resistor is placed on a silicon oxide layer and separating elements are disposed between the cells.

Abstract translation: 本发明涉及高效的光记录检测器，可用于核和激光工程，以及技术和医学断层摄影等。本发明的硅光电倍增器（变型1）包括p ++型电导率基底，其掺杂剂浓度范围为 10×10〜10 20 cm -3，其由电池组成，每个电池包括p型导电外延层，其掺杂剂添加剂浓度 可以从10-18℃逐渐变化到10-14cm -3，并且在衬底上生长，p型导电层，其掺杂剂 浓度范围为10 15至10 17 cm -3，以及掺杂剂浓度范围为10 18 cm -3的n +型导电层， / SUP>至10 20 cm -3，其中将n +型导电层与进料棒连接的多晶硅电阻器布置在每个单元中的氧化硅1a上 分离元件设置在单元之间。 所述硅光电倍增器（变型2）包括n型导电性基板，掺杂浓度范围为10〜20±20cm的p ++型导电性 > -3 并且由单元组成，其中在每个单元中，多晶硅电阻器被放置在氧化硅层上，并且分离元件设置在单元之间。