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    ELECTRONIC DEVICE WITH BANK STRUCTURES
    1.
    发明申请
    ELECTRONIC DEVICE WITH BANK STRUCTURES 审中-公开

    公开(公告)号：US20190181203A1

    公开(公告)日：2019-06-13

    申请号：US16325550

    申请日：2017-08-14

    Applicant: Merck Patent GmbH

    Inventor： Li Wei TAN ,  Peter LEVERMORE ,  Daniel WALKER

    IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

    Abstract: Electronic device and associated methods with multiple well areas located on a common substrate, where each well area is defined by at least three bank structures that form the side walls of the well area. Within each well area, there are at least two electrode segments where the electrode segments are separated laterally by at least one insulating bank where the insulating bank(s) are thicker than the electrode segments. There is at least one charge transporting layer completely filling the well area in direct contact and overlying both the electrode segments and the insulating bank(s). The well areas are filled using solution methods such as inkjet. Such devices have improved uniformity across the active areas.

    POLYOXOMETALATES FOR THE PREPARATION OF OPTICAL METAL OXIDE LAYERS
    5.
    发明申请
    POLYOXOMETALATES FOR THE PREPARATION OF OPTICAL METAL OXIDE LAYERS 有权

    公开(公告)号：US20250042761A1

    公开(公告)日：2025-02-06

    申请号：US18920739

    申请日：2024-10-18

    Applicant: MERCK PATENT GMBH

    Inventor： OLIVER DOLL ,  HAGAI ARBELL ,  HENNING SEIM

    IPC: C01G33/00 ,  G02B5/18 ,  G02B27/01

    Abstract: A polyoxometalate compound with a polyoxometalate cluster includes Group 5 elements. A formulation is provided that includes the polyoxometalate compound, and a method is provided for preparing an optical metal oxide layer using the formulation and polyoxometalate compound. The obtained optical metal oxide layers are particularly suitable for applications in optical devices such as, for example, in augmented reality (AR) and/or virtual reality (VR) devices.

    DEVELOPMENT OF NOVEL NEUTRAL LAYER AND HYDROPHOBIC PINNING MAT MATERIALS FOR USE IN DSA WITH IMPROVED SUBSTRATE COMPATIBILITY
    7.
    发明申请
    DEVELOPMENT OF NOVEL NEUTRAL LAYER AND HYDROPHOBIC PINNING MAT MATERIALS FOR USE IN DSA WITH IMPROVED SUBSTRATE COMPATIBILITY 有权

    公开(公告)号：US20250034306A1

    公开(公告)日：2025-01-30

    申请号：US18711795

    申请日：2022-11-30

    Applicant: Merck Patent GmbH

    Inventor： Edward W. NG ,  Durairaj BASKARAN

    IPC: C08F220/14 ,  C08F212/08 ,  C08F212/12 ,  C09D125/14 ,  C09D125/16 ,  C09D133/06 ,  C30B19/12 ,  C30B29/58

    Abstract: The invention relates to a random copolymer of structure (A) comprising, a carboxylic acid bearing repeat of structure (I), a 4-vinylbenzocyclobutene derived repeat unit of structure of structure (II), a styrenic repeat unit of structure (III), an alkyl acrylate or alkyl 2-methylenealkanoate derived repeat unit of structure (IV), a hydroxy functionalized alkyl acrylate or alkyl 2-methylenealkanoate derived repeat unit of structure (V), and two end groups as shown in structure (A) one of which is H and the other is a methyl moiety substituted with Rr, Rr1 and Rr2, wherein Rr1, is a C-1 to C-8 alkyl, Rr2 is selected from a C-1 to C-8 alkyl, a C-1 to C-8 alkylene hydroxy moiety (-alkylene-OH), a C-1-C-8 alkylenecarboxylic acid moiety (-alkylenne-CO2H), or a benzylic alcohol comprising moiety of structure (B), Rr is a cyano moiety (—CN) or a carbonylalkyl moiety (—C(═O)—Ri), wherein Ri is a C-1 to C-8 alkyl or an aryl moiety.

    Organometallic compounds and thin film using same
    9.
    发明授权
    Organometallic compounds and thin film using same 有权

    公开(公告)号：US12195488B2

    公开(公告)日：2025-01-14

    申请号：US16968492

    申请日：2019-01-25

    Applicant: Merck Patent GmbH

    Inventor： Seung Won Ha ,  Young Hun Byun ,  Jeum Jong Kim ,  Ho Hoon Kim ,  Seong Hak Cheon

    IPC: C07F9/00 ,  H01L21/02

    Abstract: According to the organometallic compound of the present invention and the thin film manufactured using the same, requirements of high volatility and excellent chemical/thermal stability are satisfied, and significantly improved thin-film deposition rates are exhibited even at low temperatures. In addition, property degradation due to by-products can be improved, excellent step coverage can be realized, and a thin film which, due to having a high dielectric constant, electrically satisfies the equivalent oxide thickness (EOT) requirement while having a thickness at which tunneling does not physically occur can be implemented.

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