公开(公告)号：US20240352578A1

公开(公告)日：2024-10-24

申请号：US18759780

申请日：2024-06-28

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOHOKU UNIVERSITY

Inventor： Kenya UCHIDA ,  Hiroyuki FUKUI ,  Ikuo UEMATSU ,  Takeaki IWAMOTO ,  Eunsang KWON

IPC: C23C16/30 ,  A62D3/36 ,  A62D101/40 ,  C23C16/44 ,  C23C16/56 ,  C30B19/10 ,  C30B19/12 ,  H01L21/67

CPC classification number: C23C16/30 ,  A62D3/36 ,  C23C16/56 ,  C30B19/10 ,  C30B19/12 ,  H01L21/67017 ,  A62D2101/40 ,  C23C16/4412

Abstract: According to one embodiment, a treatment method may include making a byproduct come into contact with a treatment solution, wherein the byproduct is a solid or liquid byproduct formed by polymerizing components contained in an exhaust gas discharged by synthesizing a silicon-containing material using a gas which includes silicon and halogen. The treatment solution may include at least one of an inorganic base or an organic base, and is basic.

公开(公告)号：US20240247369A1

公开(公告)日：2024-07-25

申请号：US18605574

申请日：2024-03-14

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOHOKU UNIVERSITY

Inventor： Kenya UCHIDA ,  Hiroyuki FUKUI ,  Ikuo UEMATSU ,  Takeaki IWAMOTO ,  Eunsang KWON

IPC: C23C16/30 ,  A62D3/36 ,  A62D101/40 ,  C23C16/44 ,  C23C16/56 ,  C30B19/10 ,  C30B19/12 ,  H01L21/67

CPC classification number: C23C16/30 ,  A62D3/36 ,  C23C16/56 ,  C30B19/10 ,  C30B19/12 ,  H01L21/67017 ,  A62D2101/40 ,  C23C16/4412

Abstract: According to one embodiment, a treatment solution is provided. The treatment solution is used for treating halosilanes having a cyclic structure. The treatment solution includes at least one of an inorganic base or an organic base and being basic.

公开(公告)号：US11473212B2

公开(公告)日：2022-10-18

申请号：US15991317

申请日：2018-05-29

Applicant: NGK INSULATORS, LTD.

Inventor： Makoto Iwai ,  Takashi Yoshino

IPC: H01L33/32 ,  C30B29/38 ,  C30B25/18 ,  H01L21/02 ,  C30B19/12 ,  C30B19/02 ,  H01L21/205 ,  H01L21/208 ,  C30B29/40 ,  H01L33/00

Abstract: A crystal substrate 1 includes an underlying layer 2 and a thick film 3. The underlying layer 2 is composed of a crystal of a nitride of a group 13 element and includes a first main face 2a and a second main face 2b. The thick film 3 is composed of a crystal of a nitride of a group 13 element and provided over the first main face of the underlying layer. The underlying layer 2 includes a low carrier concentration region 5 and a high carrier concentration region 4 both extending between the first main face 2a and the second main face 2b.

公开(公告)号：US20210043451A1

公开(公告)日：2021-02-11

申请号：US16989231

申请日：2020-08-10

Applicant: The Regents of the University of California

Inventor： Nobuhiko Kobayashi ,  Wenchang Yeh

IPC: H01L21/02 ,  H01L29/24 ,  C30B19/08 ,  C30B19/12 ,  C30B29/42 ,  C30B29/40 ,  C30B29/16

Abstract: A multi-layer thin film composite is formed by applying a thin film formed from non-single-crystalline oxide onto a substrate; applying a protection film onto the thin film; and supplying energy to the thin film through at least one of the protection film or the substrate.

公开(公告)号：US20210002760A1

公开(公告)日：2021-01-07

申请号：US17024923

申请日：2020-09-18

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOHOKU UNIVERSITY

Inventor： Kenya UCHIDA ,  Hiroyuki FUKUI ,  Ikuo UEMATSU ,  Takeaki IWAMOTO ,  Eunsang KWON

IPC: C23C16/30 ,  C23C16/56 ,  C30B19/12 ,  C30B19/10

Abstract: According to one embodiment, a treatment solution is provided. The treatment solution is used for treating halosilanes having a cyclic structure. The treatment solution includes at least one of an inorganic base or an organic base and being basic.

公开(公告)号：US10770613B2

公开(公告)日：2020-09-08

申请号：US16559971

申请日：2019-09-04

Applicant: 1366 TECHNOLOGIES INC.

Inventor： Ralf Jonczyk ,  Brian D. Kernan ,  G.D. Stephen Hudelson ,  Adam M. Lorenz ,  Emanuel M. Sachs

IPC: H01L31/06 ,  H01L31/00 ,  H01L31/062 ,  H01L31/113 ,  H01L31/18 ,  H01L31/0224 ,  C30B11/00 ,  C30B19/12 ,  C30B28/04 ,  C30B29/06 ,  C30B31/02 ,  C30B31/04 ,  C30B35/00 ,  H01L21/00 ,  H01L31/068 ,  H01L31/056 ,  H01L31/0216 ,  H01L31/0288

Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

公开(公告)号：US10707373B2

公开(公告)日：2020-07-07

申请号：US16059250

申请日：2018-08-09

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi Watanabe ,  Kei Sato ,  Yoshitaka Kuraoka ,  Katsuhiro Imai ,  Tsutomu Nanataki

IPC: H01L33/18 ,  C30B9/12 ,  C30B29/40 ,  H01L33/32 ,  H01L31/0392 ,  C30B28/04 ,  C30B19/12 ,  C30B29/60 ,  C30B19/02 ,  H01L33/36

Abstract: There is provided a self-supporting polycrystalline gallium nitride substrate having excellent characteristics such as high luminous efficiency and high conversion efficiency when used for devices, such as light emitting devices and solar cells. The self-supporting polycrystalline gallium nitride substrate is composed of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, and has a top surface and a bottom surface. The crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis on the top surface are distributed at various tilt angles from the specific crystal orientation, in which the average tilt angle thereof is 0.1° or more and less than 1° and the cross-sectional average diameter DT of the gallium nitride-based single crystal grains at the outermost surface exposed on the top surface is 10 μm or more.

公开(公告)号：US10693032B2

公开(公告)日：2020-06-23

申请号：US15713967

申请日：2017-09-25

Applicant: TOYODA GOSEI CO., LTD.

Inventor： Miki Moriyama ,  Shiro Yamazaki ,  Shohei Kumegawa

IPC: C30B19/02 ,  H01L31/18 ,  C30B29/40 ,  C30B9/12 ,  C30B19/12 ,  C30B25/02 ,  C30B9/10 ,  C30B19/00 ,  C30B9/06 ,  C30B25/18

Abstract: The seed substrate comprises a base substrate and a base layer comprising a Group III nitride semiconductor formed on the base substrate, which has a high dislocation density region and a low dislocation density region. The planar pattern of the high dislocation density region is a honeycomb pattern. A hollow exists between the base substrate and the low dislocation density region. The object layer is grown through a flux method using the seed substrate. The high dislocation density region is melted back at an initial stage of crystal growth, and thereafter, the object layer is grown on the top surface of the low dislocation density region. A cavity remains between the high dislocation density region and the object layer. The presence of the cavity and the hollow makes easy to peel the object layer from the seed substrate.

公开(公告)号：US10450671B2

公开(公告)日：2019-10-22

申请号：US15023981

申请日：2014-08-27

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  NIPPON STEEL & SUMITOMO METAL CORPORATION

Inventor： Hironori Daikoku ,  Motohisa Kado ,  Kazuhito Kamei ,  Kazuhiko Kusunoki

IPC: C30B19/10 ,  C30B29/36 ,  C30B9/10 ,  C30B19/02 ,  C30B19/06 ,  C30B19/12 ,  H01L21/02 ,  H01L29/04 ,  H01L29/16 ,  C30B19/08

Abstract: Provided is a SiC single crystal that has a large growth thickness and contains no inclusions. A SiC single crystal grown by a solution process, wherein the total length M of the outer peripheral section formed by the {1-100} faces on the {0001} growth surface of the SiC single crystal, and the length P of the outer periphery of the growth surface of the SiC single crystal, satisfy the relationship M/P≤0.70, and the length in the growth direction of the SiC single crystal is 2 mm or greater.

公开(公告)号：US10400352B2

公开(公告)日：2019-09-03

申请号：US15426770

申请日：2017-02-07

Applicant: Soraa, Inc.

Inventor： Mark P. D'Evelyn ,  James S. Speck ,  Derrick S. Kamber ,  Douglas W. Pocius

IPC: C30B7/10 ,  H01L21/02 ,  H01L29/20 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B33/06 ,  C30B19/06 ,  C30B19/12

Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.