Three-dimension adjustable hidden furniture door hinge
    1.
    发明授权
    Three-dimension adjustable hidden furniture door hinge 有权
    三维可调式隐形家具门铰链

    公开(公告)号:US07516516B2

    公开(公告)日:2009-04-14

    申请号:US11320724

    申请日:2005-12-30

    申请人: Zhiyong Wu

    发明人: Zhiyong Wu

    IPC分类号: E05D7/04

    摘要: A three-dimension adjustable hidden furniture door hinge is designed to include a travel member that can be fixed onto the door, an adjustable member that can be fixed onto the door frame and an arm segment connects these two members, the adjustable member includes three tiers of boards, a base board in the lower tier can be fixed onto a door frame, a middle board in the middle tier that can slide up and down on top of the base board, and an adjustable board in the upper tier on top of the middle board that can slide back and forth; there are matching grooves and directional tabs formed on the boards; three cam screws are used to provide up-down, back-forth, and left-right position adjustment, there is no need to loosen up other screws, the entire adjustment process is simple, quickly and energy saving.

    摘要翻译: 三维可调式隐形家具门铰链设计为包括可固定在门上的旅行构件,可固定在门框上的可调节构件,并且臂段连接这两个构件,可调节构件包括三个层 的板,下层的基板可以固定在门框上,中间层的中间板可以在基板的上面上下滑动,并且在上层的上层可调节板 中间板可以来回滑动; 在板上形成有匹配的凹槽和定向凸片; 三个凸轮螺丝用于提供上下左右位置调整,无需松开其他螺丝,整个调整过程简单,快捷节能。

    On-chip ESD protection circuit using enhancement-mode HEMT/MESFET technology
    2.
    发明授权
    On-chip ESD protection circuit using enhancement-mode HEMT/MESFET technology 有权
    使用增强型HEMT / MESFET技术的片上ESD保护电路

    公开(公告)号:US07679870B2

    公开(公告)日:2010-03-16

    申请号:US11540974

    申请日:2006-10-02

    IPC分类号: H02H9/00

    CPC分类号: H01L27/0285

    摘要: An on-chip circuit for protection against electrostatic discharge (ESD) is disclosed. Unlike conventional ESD protection circuit using high turn-on voltage diode string, the circuit uses a plural of enhancement-mode HEMT/MESFET triggered by a shorter diode string to shunt large ESD current for protected susceptive RF circuit. Further, by using dual-gate technology of enhancement-mode HEMT/MESFET, the on-chip ESD protection circuit has the less parasitic capacitance without expanding device size for vulnerable RF circuit.

    摘要翻译: 公开了一种用于防止静电放电(ESD)的片上电路。 与使用高导通电压二极管串的常规ESD保护电路不同,该电路使用由较短二极管串触发的多个增强型HEMT / MESFET来分流用于保护的感应RF电路的大ESD电流。 此外,通过使用增强型HEMT / MESFET的双栅极技术,片上ESD保护电路具有较小的寄生电容,而不会对易受攻击的RF电路扩大器件尺寸。