公开(公告)号：US08089161B2

公开(公告)日：2012-01-03

申请号：US12385840

申请日：2009-04-21

申请人： Masahiro Komuro

发明人： Masahiro Komuro

IPC分类号： H01L21/00

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L23/481 ,  H01L23/544 ,  H01L24/11 ,  H01L2221/68327 ,  H01L2223/54426 ,  H01L2223/5448 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2224/05552

摘要： A semiconductor device has a substrate, an insulating interlayer, an interconnect as one example of an electro-conductive pattern, a through-electrode, and a bump as one example of a connection terminal, wherein the insulating interlayer is positioned up above the surface of the substrate, the interconnect is positioned on the surface of the insulating interlayer, the through-electrode extends through the substrate and the insulating interlayer, from the back surface of the former to the surface of the latter, one end of which is connected to the interconnect, and the bump is provided on the back surface side of the substrate, and connected to the other end of the through-electrode.

摘要翻译： 作为连接端子的一个例子，半导体器件具有基板，绝缘中间层，作为导电图案的一个实例的互连，贯通电极和凸块，其中绝缘中间层位于 基板上，互连部位于绝缘中间层的表面上，贯通电极从基板的后表面到后者的表面延伸穿过基板和绝缘中间层，其一端连接到 并且凸块设置在基板的背面侧，并且与贯通电极的另一端连接。