公开(公告)号：US20240112906A1

公开(公告)日：2024-04-04

申请号：US18266110

申请日：2021-12-02

申请人： ABIT TECHNOLOGIES CO., LTD

发明人： Kiyokazu NAKAGAWA

IPC分类号： H01L21/02

CPC分类号： H01L21/02282 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02252 ,  H01L21/02164

摘要： An object is to provide a manufacturing method of an insulation film in which no heating at high temperature is necessary. The manufacturing method of the insulation film includes a deposition process, a heating process and an exposure process. In the deposition process, a material is deposited on a substrate 11. In the heating process, the substrate 11 is heated at a temperature equal to or higher than 85° C. to equal to or lower than 450° C. In the exposure process, by irradiating a surface SA2 of a deposition material layer 12 on the substrate 11 with a plasma 82 containing hydrogen radicals, hydrogen is made to diffuse into the structure of the deposition material layer 12 and bind with components of the deposition material layer 12. A product of an irradiation time and a density of the radicals formed by the plasma 82 is equal to or higher than 25×1014 min·pcs/cm3.