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1.发明授权Magnetic sensor stack body, method of forming the same, film formation control program, and recording medium 有权磁传感器堆叠体，其形成方法，成膜控制程序和记录介质公开(公告)号：US08810974B2
公开(公告)日：2014-08-19
申请号：US12849907
申请日：2010-08-04
CPC分类号： G11B5/3932 , G01R33/098 , G11B5/3163 , G11B5/398 , H01L43/08 , H01L43/12
摘要： The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall faces of a magnetoresistive element so as to be almost perpendicular to the junction wall faces. A magnetic sensor stack body has, on a substrate, a magnetoresistive element whose electric resistance fluctuates when a bias magnetic field is applied and, on sides of opposed junction wall faces of the magnetoresistive element, field regions including magnetic layers for applying the bias magnetic field to the element. The magnetoresistive element has at least a ferromagnetic stack on a part of an antiferromagnetic layer, and width of an uppermost face of the ferromagnetic stack along a direction in which the junction wall faces are opposed to each other is smaller than width of an uppermost face of the antiferromagnetic layer in the same direction.
摘要翻译： 本发明涉及在磁阻元件的两个相对的接合壁面附近的磁性层中对准晶体c轴，以便几乎垂直于接合壁面。 磁传感器堆叠体在衬底上具有在施加偏置磁场时其电阻波动的磁阻元件，并且在磁阻元件的相对的接合壁面的侧面包括用于施加偏置磁场的磁性层的场区域 到元素 磁阻元件在反铁磁层的一部分上具有至少一个铁磁性堆叠，并且铁磁性堆叠沿着接合壁所面对的方向的最上面的宽度小于彼此相对的方向的宽度 反铁磁层在同一方向。
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2.发明申请MAGNETIC SENSOR STACK BODY, METHOD OF FORMING THE SAME, FILM FORMATION CONTROL PROGRAM, AND RECORDING MEDIUM 有权磁性传感器堆叠体，其形成方法，成膜控制程序和记录介质公开(公告)号：US20110032645A1
公开(公告)日：2011-02-10
申请号：US12849907
申请日：2010-08-04
IPC分类号： G11B5/127
CPC分类号： G11B5/3932 , G01R33/098 , G11B5/3163 , G11B5/398 , H01L43/08 , H01L43/12
摘要： The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall faces of a magnetoresistive element so as to be almost perpendicular to the junction wall faces. A magnetic sensor stack body has, on a substrate, a magnetoresistive element whose electric resistance fluctuates when a bias magnetic field is applied and, on sides of opposed junction wall faces of the magnetoresistive element, field regions including magnetic layers for applying the bias magnetic field to the element. The magnetoresistive element has at least a ferromagnetic stack on a part of an antiferromagnetic layer, and width of an uppermost face of the ferromagnetic stack along a direction in which the junction wall faces are opposed to each other is smaller than width of an uppermost face of the antiferromagnetic layer in the same direction.
摘要翻译： 本发明涉及在磁阻元件的两个相对的接合壁面附近的磁性层中对准晶体c轴，以便几乎垂直于接合壁面。 磁传感器堆叠体在衬底上具有在施加偏置磁场时其电阻波动的磁阻元件，并且在磁阻元件的相对的接合壁面的侧面包括用于施加偏置磁场的磁性层的场区域 到元素 磁阻元件在反铁磁层的一部分上具有至少一个铁磁性堆叠，并且铁磁性堆叠沿着接合壁所面对的方向的最上面的宽度小于彼此相对的方向的宽度 反铁磁层在同一方向。
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